Vorträge

Konferenzbeitrag

• A. Fissel (2019): Thermodynamics and kinetics of nanocluster formation on semiconductor surfaces,  21st International Conference on Materials, Methods and Technologies, Burgas, Bulgaria, 01.-05.07.2019.
• A. Fissel (invited) (2019): Thermodynamics and kinetics of nanocluster formation on semiconductor surfaces: the example of Si on SiC(0001),  XXth International Workshop on the Physics of Semiconductor Devices (IWPSD 2019), Kolkata, India, 17. - 20.12.2019
• P. Gribisch, A. Fissel (2019): Tuning of morphology and crystal structure of Gd2O3 grown on Si(001),  XXth International Workshop on the Physics of Semiconductor Devices (IWPSD 2019), Kolkata, India, 17.-20.12.2019
• P. Gribisch, A. R. Chaudhuri, A. Fissel (2019): Growth and dielectric properties of monoclinic Gd2O3 on Si(001),  2nd Joint ISTDM / ICSI 2019 Conference, Madison, USA, 02.-06.06.2019
  DOI: 10.1149/09301.0057ecst
• P. Gribisch, J. Schmidt, H. J. Osten, A. Fissel (2018): Influence of Gd2O3 nanostructure formation on crystal structure and surface morphology during growth on Si(001),  German MBE Workshop 2018, Freiburg, Germany, 11.-12.10.2018
• A. Fissel, J. Krügener, P. Gribisch, S. Herbers, A. R. Chaudhuri (invited) (2016): Si twinning superlattices on atomically flat mesas: Epitaxial growth and electrical characterization,  2016 Collaborative Conference on 3D and Materials Research (CC3DMR), Incheon/Seoul, South Korea, 20.-24.06.2016
• A. Grimm, A. Fissel, E. Bugiel, H. J. Osten and T. F. Wietler (2015): In situ observation of low temperature growth of Ge on Si(111) via RHEED,  International Workshop on SPA-LEED, Hannover, Germany, 28.05.-29.05.2015
• A. Grimm, A. Fissel, E. Bugiel, H. J. Osten und T. F. Wietler (keynote talk) (2015): In situ observation of low temperature growth of Ge on Si(111) via RHEED,  Fifth european conference on crystal growth (eccg5), Bologna, Italy, 09.-11.09.2015
• A. R. Chaudhuri, H. J. Osten und A. Fissel (2015): Impact of boron on the step-free area formation during molecular beam epitaxial growth on MESA structures on Si(111),  Fifth european conference on crystal growth (eccg5), Bologna, Italy, 09.-11.09.2015
• A.Fissel (invited) (2015): Thermodynamics and kinetics of nanocluster formation on semiconductor surfaces,  Collaborative Conference on Crystal Growth (3CG 2015), Hong Kong, China, 14.-17.12.2015
• A. Fissel (invited) (2014): Impact of Surface Phase Coexistence on the Development of Step-free Areas on Si(111),  Collaborative Conference on Crystal Growth (3CG 2014), Phuket, Thailand, 04.-07.11.2014
• A. Fissel, A. R. Chaudhuri, J. Krügener, H.-J. Osten (2014): Influence of “1×1” – (7×7) phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si(111),  18th International Conference on Molecular Beam Epitaxy (MBE 2014), Flagstaff, Arizona, USA, 07.-12.09.2014
• A. Laha, A. Fissel, H.-J. Osten (2014): Semiconductor/Oxide Heterostructures on Silicon for Future Complementary Metal Oxide Semiconductor (CMOS) Devices and Beyond,  European Workshop on Heterostructure Technology - HETECH 2014, Giessen, Germany, 12.-15.10.2014
• A. R. Chaudhuri, A. Fissel, H.-J. Osten (2014): Template assisted growth and dielectric properties of Gd2O3 thin films on Si(100),  E-MRS 2014 Spring Meeting, Lille, France, 26.-30.05.2014
• H.-J. Osten (invited), D. Schwendt, A. R. Chaudhuri, A. Fissel, P. Shekhter, M. Eizenberg (2014): Tuning Dielectric Properties of Epitaxial Lanthanide Oxides on Silicon,  225th Electrochemical Society Meeting, Orlando, Florida, USA, 11.-15.05.2014
• K. Ghosh, S. Das, A. Fissel, H.-J. Osten, A. Laha (2014): Long term reliability study of epitaxial neodymium-gadolinium oxides (NGO) on Si substrates for future group IV based CMOS devices,  E-MRS 2014 Spring Meeting, Lille, France, 26.-30.05.2014
• A. Fissel (2013): Thermodynamics and kinetics of nanocluster formation on semiconductor surfaces,  21st International Conference on Composites or Nano Engineering ICCE-21, Tenerife, Spain, 21.-27.07.2013
• A. Fissel, J. Krügener, H.-J. Osten (2013): Impact of surface phase transformation on the epitaxial growth of Si on Si(111),  17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Warzaw, Poland, 11.-16.08.2013
• A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Enhanced Dielectric Properties of Nitrogen Doped Epitaxial Gd2O3 Thin Films on Si,  E-MRS 2013 Fall Meeting, Warzaw, Poland, 16.-20.09.2013
• A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Improving Dielectric Properties of Epitaxial Gd2O3 Thin Films on Si by Dopant Incorporation,  30th North American Conference on Molecular Beam Epitaxy (NAMBE 2013), Banff, Alberta, Canada, 05.-11.10.2013
• A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Enhanced Dielectric Properties of Nitrogen Doped Epitaxial Gd2O3 Thin Films on Si,  NanoDay 2013, Hannover, Germany, 10.10.2013
• A. Fissel (invited tutorial) (2012): Semiconductor Epitaxy: From Science to Nanotechnology,  International Conference on Emerging Electronics (ICEE), Mumbai, India, 15.-17.12.2012
• A. Fissel, J. Krügener, H.-J. Osten (2012): Preparation of large step-free mesas on Si(111) by molecular beam epitaxy,  E-MRS 2012 Spring Meeting, Symposium A: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications, Strasbourg, France, 14.-18.05.2012
• A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2012): Encapsulated solid phase epitaxy of Ge quantum well embedded into epitaxial rare earth oxide,  17th International Conference on Molecular Beam Epitaxy, Nara, Japan, 23.-28.09.2012
• A. Laha, A. Bin, P. R. P. Babu, A. Fissel, H.-J. Osten (2011): Enhanced electrical properties of carbon doped epitaxial Gd2O3 thin films on silicon substrates,  220th Electrochemical Society Meeting, Boston (MA), USA, 09.-14.10.2011
• J. Krügener, A. Fissel, H.-J. Osten (2011): Formation of large step-free areas on silicon,  Deutscher MBE-Workshop 2011, Berlin, Germany, 05.-06.10.2011
• A. Fissel, J. Kruegener, H.-J. Osten (2010): Towards controlled molecular beam epitaxial growth of artificially layered Si structures,  16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010
• A. Laha, A. Fissel, H.-J. Osten (2010): Impact of interfacial germanium on the properties of molecular beam epitaxial grown Gd2O3 on Si,  16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010
• A. Laha, A. Fissel, H.-J. Osten (2010): Growth of graphite-like carbon on Si(111) substrates using solid source molecular beam epitaxy technique,  16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010
• A. Laha, E. Bugiel, H.-J. Osten, A. Fissel, V. V . Afanas’ev, M. Badylevich (2010): Semiconductor Nanostructures in Crystalline Rare Earth Oxide for Nanoelectronic Device Applications,  22nd International Conference on Microelectronics (ICM2010), 2010, Cairo, Egypt, 19.-22.12.2010
  DOI: 10.1109/ICM.2010.5696129
• A. Laha, E. Bugiel, H.-J. Osten, A. Fissel, V. V. Afanas'ev, M. Badylevich (2010): Incorporating Si, Ge and Si1-xGex Nanostructures into Crystalline Rare Earth Oxide for Nanoelectronic Device Applications,  E-MRS Fall Meeting 2010, Symp. E: Nanoscaled Si, Ge based materials, Warsaw, Poland, 13.-17.09.2010
• H.-J. Osten, A. Laha, A. Fissel (2010): Si Nanostructures Embedded into Crystalline Rare-Earth Oxide Matrix for Opto and Nano Electronic Applications,  4th International Conference on Quantum, Nano and Micro Technologies (ICQNM 2010), Sint Maarten, Netherlands Antilles, 10.-16.02.2010
• J. Krügener, H.-J. Osten, A. Fissel (2010): Influence of Surface Preparation Conditions on the Surface Defect Structure of Boron-covered Si(111): An Ultraviolet Photoelectron Spectroscopy Study,  37th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI), Santa Fe, New Mexico, USA, 10.-14.01.2010
• A. Fissel, A. Laha, E. Bugiel, R. Dargis, A. Ali, H. J. Osten (2009): Tailoring of Si nanostructures embedded into epitaxial oxides for various applications,  17th International Conference on Composites/Nano Engineering (ICCE-17), Honolulu, USA, 26.07.-01.08.2009
• A. Fissel, A. Laha, E. Bugiel, R. Dargis, A. Ali, H.-J. Osten (2009): Preparation and Properties of Si nanostructures embedded into epitaxial oxides,  Nanotech Europe 2009, Berlin, Germany, 28.-30.09.2009
• A. Fissel, J. Krügener, D. Schwendt, H.-J. Osten (2009): Role of boron and surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study,  12th International Conference on the Formation of Semiconductor Interfaces (ICFSI-12), Weimar, Germany, 05.-10.07.2009
• A. Fissel, R. Dargis, E. Bugiel, J. Krügener, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2009): Single-crystalline silicon on single-crystalline insulator prepared by different approaches,  E-MRS 2009, Symposium I, Strasbourg, France, 08.-12.06.2009
• A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2009): Epitaxial Gd2O3 on strained Si1-xGex layers: Growth and electrical characterization,  E-MRS 2009, Symposium I, Strasbourg, France, 08.-12.06.2009
• A. Laha, M. Jestremski, E. Bugiel, D. Wong, A. Fissel, H.-J. Osten, Ashkar Ali, S. Datta (2009): Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano-electronic Device Application,  2009 International Conference on Mechanical and Electronics Engineering (ICMEE), Chennai, India, 27.-29.06.2009
• A. Laha, M. Jestremski, E. Bugiel, D. Wong, and H.-J. Osten, A. Fissel, A. Ali, S. Datta (2009): Quantum Effects in Group IV Nanostructures Embedded into Crystalline Rare Earth Oxides on Silicon Substrates,  International Conference on Materials for Advanced Technologies (ICMAT2009), Singapore, 28.06.-03.07.2009
• H.-J. Osten, A. Laha, A. Fissel (invited) (2009): Epitaxial Lanthanide Oxide based Gate Dielectrics,  MRS Spring Meeting, San Francisco, California, USA, 13.-17.04.2009
• J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, T. Liu, H.-J. Osten (2009): Structural Study of Epitaxially Grown Nano-thick Nd2O3/Si(111) Heterostructure,  4th IEEE Int. Conf. on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS), Shenzhen, China, 05.-08.01.2009
• R. Dargis, A. Fissel, D. Schwedt, E. Bugiel, J. Krügener, T. Wietler, A. Laha, H.-J. Osten (2009): Epitaxial Growth of Silicon on Rare-Earth Metal oxide,  4th Symposium on Vacuum based Science and Technology, Koszalin-Kolobrzeg, Poland, 21.-23.09.2009
• A. Fissel, J. Krügener, E. Bugiel, T. Block, H.-J. Osten (2008): Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes,  Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) 2008, Sydney, Australia, 28.07.-01.08.2008
• A. Laha, A. Fissel, E. Bugiel, M. Badylevich, V. Afanas'ev, H.-J. Osten (2008): Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application,  Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) 2008, Sydney, Australia, 28.07.-01.08.2008
• A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2008): Si-nanoclusters embedded into epitaxial rare earth oxides: potential candidate for non-volatile memory applications,  E-MRS Meeting 2008, Strasbourg, France, 27.-31.05.2008
• A. Laha, E. Bugiel, R. Dargis, D. Schwendt, M. Badylevich, V. Afanasiev, A. Fissel, H.-J. Osten (2008): Integration of low dimensional crystalline Si into functional epitaxial oxides,  Workshop on Recent Advances of Low Dimensional Structures and Devices (WRA-LDSD) Nottingham, UK, 07.-09.04.2008
• H.-J. Osten, A. Laha, E. Bugiel, A. Fissel (2008): Si Nanostructures Embedded into Epitaxial Gd2O3 on Si,  15th International Conference on Molecular Beam Epitaxy, Vancouver, Canada, 03.-08.08.2008
• M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans A. Laha, H.-J. Osten, A. Fissel (2008): Electronic structure of interfaces of cubic Gd2O3 with Si(111) and Si nano-clusters,  E-MRS Meeting 2008, Strasbourg, France, 27.-31.05.2008
• Q.-Q. Sun, A. Laha, H.-J. Osten, S.-J. Ding, D. W. Zhang, A. Fissel (2008): Electrical Characterization of Ultrathin Single Crystalline Gd2O3/Si(100) with Pt Top Electrode,  9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Beijing, China, 20.-23.10.2008
• R. Dargis, A. Fissel, E. Bugiel, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2008): Development of multi-step procedure for epitaxial growth of crystalline silicon on rare-earth-metal oxide for SOI-applications,  14th International Conference on Solid Films and Surfaces (ICSFS), Dublin, 29.06.-04.07.2008
• T. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, H.-J. Osten (2008): Epitaxial growth of Gd2O3 on Ge films grown by surfactant-mediated epitaxy on Si(001) substrates,  4th International SiGe Technology and Device Meeting (ISTDM 2008), Taiwan, 11.-14.05.2008
• A. Fissel, D. Kühne, E. Bugiel, A. Laha, M. Czernohorsky, R. Dargis, H.-J. Osten (2007): Silicon in functional epitaxial oxides: A new group of nanostructures,  The 6th International Conference on Low Dimensional Structures and Devices (LDSD), San Andres, Colombia, 15.-20.04.2007
• A. Laha, A. Fissel, H.-J. Osten (2007): Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: A route towards tuning the electrical properties,  15th Conference on Insulating Films on Semiconductors (INFOS), Athens, Greece, 20.-23.06.2007
• A. Laha, D. Kühne, E. Bugiel, A. Fissel, H.-J. Osten (2007): Confining single crystal Si-nanoclsuters into epitaxial rare earth oxides: Taking advantage of quantum phenomena to pratical applications,  IUMRS-ICAM, Bangalore, India, 08.-13.10.2007
• E. Bugiel, A. Fissel, H.J. Osten (2007): Integration of Functional Epitaxial Oxides into Silicon: A TEM Investigation,  Microscopy of Semiconducting Materials XV, Churchill College, Cambridge, UK, 02.-05. April 2007.
• E. Bugiel, A. Fissel, M. Czernohorsky, A. Laha, H.-J. Osten (invited) (2007): Integration of Functional Epitaxial Oxides into Silicon: A TEM Investigation,  Microscopy Conference, Saarbrücken, 02.-07.09.2007
• H.-J. Osten, D. Kühne, A. Laha, R. Dargis, M. Czernohorsky, E. Bugiel, A. Fissel (invited) (2007): Integration of Functional Epitaxial Oxides into Silicon: From High-K Application to Nanostructures,  Jahrestagung der Deutsche Physikalischen Gesellschaft, Regensburg, Germany, 25.-30.03.2007
• H.-J. Osten, M. Czernohorsky, R. Dargis, A. Laha, D. Kühne, E. Bugiel, A. Fissel (invited) (2007): Integration of functional epitaxial oxides into silicon: From high-k application to nanostructures,  15th Conference on Insulating Films on Semiconductors (INFOS), Athens, Greece, 20.-23.06.2007
• A. Fissel, C. R. Wang, E. Bugiel, and H.-J. Osten (2006): Preparation of twinning superlattices in silicon by atomic-scale surface manipulation: First step towards Si polytype growth,  24th North American Conference on Molecular Beam Epitaxy, Durham, North Carolina, USA, 08.-11.10.2006
• A. Fissel, E. Bugiel, and H.-J. Osten (2006): Formation of Si twinning-superlattice: First Step towards Si polytype growth,  E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
• A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Properties of crystalline rare-earth oxide high-k dielectrics grown by molecular beam epitaxy on silicon carbide,  E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
• A. Fissel, M. Czernohorsky, R. Dargis, H.-J. Osten (2006): Growth and Properties of Crystalline Gadolinium Oxide Dielectric Layers On Silicon Carbide for High-K Application,  6th European Conference on Silicon Carbide and Related Materials (ECSCRM), Newcastle upon Tyne, UK, 03.-07.09.2006
• A. Laha, A. Fissel, E. Bugiel, H.-J. Osten (2006): Comparative Investigation of Epitaxial Gd2O3 Thin Films Grown on Si Substrates with Different Orientations for High-K Application,  48th Electronic Materials Conference, Pennsylvania State University, Pennsylvania, USA, 28.-30.06.2006
• A. Laha, A. Fissel, E. Bugiel, O. Kirfel, H.-J. Osten (2006): Epitaxial multi-component rare earth oxide for high-K application,  E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
• D. Kühne, A. Fissel, E. Bugiel, H.-J. Osten (2006): Novel approach for fabrication of single crystalline insulator/Si/insulator double barrier nanostructures using cooperative vapour-solid-phase epitaxy,  MRS Spring Meeting 2006, San Francisco, California, USA, 18.-21.04.2006
• D. Kühne, A. Fissel, E. Bugiel, H.-J. Osten (2006): Fabrication of single crystalline insulator/Si/insulator double barrier nanostructure using cooperative vapor-solid-phase epitaxy,  E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
• D. Kühne, E. Bugiel, A. Fissel, H.-J. Osten (2006): Novel Approach for Fabrication of Single Crystalline Insulator/Si/Insulator Nanostructures: Cooperative Vapour-Solid phase Epitaxy,  33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI), Cocoa Beach, Florida, USA, 15.-19.01.2006
• H.-J. Osten, A. Laha, A. Fissel (2006): Influence of Si substrate orientation on growth and electrical properties of epitaxial Gd2O3 thin films for high-κ application,  37th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, 06.-09.12.2006
• H.-J. Osten, D. Kühne, A. Laha, M. Czernohorsky, E. Bugiel, A. Fissel (2006): Integration of functional epitaxial oxides into silicon: From high-k application to nanostructures,  24th North American Conference on Molecular Beam Epitaxy, Durham, North Carolina, USA, 08.-11.10.2006
• H.-J. Osten, M. Czernohorsky, E. Bugiel, D. Kühne, A. Fissel (2006): Interface engineering during epitaxial growth of high-k lanthanide oxides on silicon,  MRS Spring Meeting 2006, San Francisco, California, USA, 18.-21.04.2006
• H.D.B. Gottlob, T. Echtermeyer, T. Mollenhauer, M. Schmidt, J.K. Evaki, T. Wahlbrink, M.C. Lemme, H. Kurz, R. Endres, Y. Stefanov, U. SChwalke, M. Czernohorsky, E. Bugiel, A. Fissel, H.J. Osten (2006): Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics,  36th European Solid-State Device Research Conference, Montreux, Switzerland, 18.-22. September 2006.
• M. Czernohorsky, A. Fissel, H.-J. Osten (2006): Characterization of crystalline rare-earth oxide high-k dielectrics grown by molecular beam epitaxy on silicon carbide,  33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI), Cocoa Beach, Florida, USA, 15.-19.01.2006
• M. Czernohorsky, A. Fissel, R. Dargis, E. Bugiel, H.-J. Osten (2006): Wachstum von kristallinem Gadoliniumoxid auf Silicium,  Deutscher MBE Workshop, Hamburg, Germany, 26.-27.09.2006
• R. Dargis, A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Epitaxie von Gadoliniumoxid auf Siliziumcarbid,  Deutscher MBE Workshop, Hamburg, Germany, 26.-27.09.2006
• A. Fissel (invited): (2005): Manipulation der atomaren Anordnung mit Epitaxie – Ein Weg zur erweiterten Funktionalität von Halbleitermaterialien für nanoelektronische Anwendungen,  Kolloquiumsvortrag, Laboratorium für Nano- und Quantenengineering (LNQE), Hannover, 26.10.2005.
• A. Fissel, O. Kirfel, Z. Elassar, E. Bugiel, M. Czernohorsky, H. J. Osten (2005): Interface formation during epitaxial growth of Neodymium Oxide on Si(001),  207th Electrochemical Society Meeting, Quebec (Canada), 15.-20.05.2005
• E. Bugiel, H.J. Osten, A. Fissel, O. Kirfel, M. Czernohorsky (2005): TEM investigations of Epitaxial High-k Dielectrics on Silicon,  Microscopy of Semiconductor Materials (MSM) XIV Conference, Oxford (UK), 11.-14.04.2005
• H.D.B. Gottlob, T. Echtermeyer, T. Mollenhauer, J. Efavi, M. Schmidt, T. Wahlbrik, M.C. Lemme, H. Kurz, M. Czernohorsky, E. Bugiel, H.J. Osten, O. Kirfel, A. Fissel (2005): Crystalline Gd2O3 High-k Gate Dielectrics with TiN Capped Fully Silicided (FUSI) NiSi Electrodes,  36th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington (USA), 01.-03.12.2005
• M. Czernohorsky, O. Kirfel, Z. Elassar, E. Bugiel, A. Fissel, H.-J. Osten (2005): MBE Growth and Interface Formation of Neodymium Oxide on Silicon,  13th Euro-Konferenz Molecular Beam Epitaxy, Grindelwald, Switzerland, 07.-09.03.2005
• A. Fissel (invited) (2004): Molecular Beam Epitaxy of semiconductor nanostructures based on SiC,  5th European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna (Italy), 31.08. – 04.09.2004
• A. Fissel, C. Wang, E. Bugiel, H.-J. Osten (2004): Epitaxial growth of non-cubic silicon,  The 5th International Conference on Low Dimensional Structures and Devices (LDSD), Cancun, Mexico, 12.-17.12.2004
• H.-J. Osten, E. Bugiel, A. Fissel, O. Kirfel (invited) (2004): Epitaxial Silicon/Metal Oxide Stacks for various applications,  11th Advanced Heterostructure Workshop, Hawaii, USA, 05.-10.12.2004
• H.-J. Osten, E. Bugiel, O. Kirfel, M. Czernohorsky, A. Fissel (invited keynote lecture) (2004): Growth and Properties of Epitaxial Metal Oxides for High-K Dielectrics,  IC MBE 2004, Edinburgh, UK, August 2004
• A. Fissel, H.-J. Osten, and E. Bugiel (invited) (2003): Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to Praseodymium Oxide,  Physics and Chemistry of Semiconductor Interfaces, Salt Lake City, Utah, USA, 19.-23.01.2003
• H.-J. Osten, A. Bugiel, A. Fissel (invited) (2003): Understanding epitaxial growth of alternative high-K dielectrics on Si(001),  ESF Workshop, Zürich, Switzerland, 17.-18.03.2003
• H.-J. Osten, A. Fissel (invited) (2003): Epitaxial High-K Materials,  12th EURO-MBE 2002, Bad Hofgastein, Austria, 16.-19.02.2003
• F. Bechstedt, A. Fissel, J. Furthmüller, U. Kaiser, H.-C. Weisker, W. Wesch (invited) (2002): Quantum structures in SiC,  11. Conference on Formation of Interfaces (ICSFS-11), Marseille, France, 08.-12.07.2002
• H.-J. Osten, E. Bugiel, A. Fissel (2002): Epitaxial Praseodymium Oxide: A New High-K Dielectric,  9th International Workshop on Oxide Electronics (WOE), St. Peter Beach, Florida, Oct. 2002
• H.-J. Osten, E. Bugiel, A. Fissel (invited) (2002): Epitaxial Praseodymium Oxide: A New High-K Dielectric,  Material Research Society, Fall Meeting, Symp. M, Boston, 02.-05.12.2002
• U. Schwalke, K. Boye, K. Haberle, R. Heller, G. Hess, G. Müller, T. Ruland. G. Tzschöckel, H. J. Osten, A. Fissel, H.-J. Müssig (invited) (2002): High-k dielectric materials: Integration issues and electrical characteristics,  European Congress on Advanced Materials and Processes, Materials Week 2002, München, Germany, 30.09.–02.10.2002
• U. Schwalke, K. Boye, K. Haberle, R. Heller, G. Hess, G. Müller, T. Ruland. G. Tzschöckel, H.-J. Osten, A. Fissel, H. J. Müssig (invited) (2002): Process Integration of Crystalline Pr2O3 High-K Gate Dielectrics,  32th European Solid-State Device Research Conference (ESSDERC 2002), Firenze, Italy, 24.-26.09.2002