Publikationen

Journal

• P. Gribisch, A. Fissel (2021): Interfacial layer formation during the growth of Gd2O3 on Si(001) and its thermal stability Semiconductor Science and Technology 36(11) (2021) 115016,  Semiconductor Science and Technology 36(11) (2021) 115016
  DOI: 10.1088/1361-6641/ac2962
• P. Gribisch, A. Fissel (2020): Tuning of structural and dielectric properties of Gd2O3 grown on Si(001),  Journal of Applied Physics 128 (2020) 055108
  DOI: 10.1063/5.0007793
• A. Fissel (2019): THERMODYNAMICS AND KINETICS OF NANOCLUSTER FORMATION ON SEMICONDUCTOR SURFACES: THE EXAMPLE OF SI GROWTH ON SIC(0001),  Journal of International Scientific Publications: Materials,Methods & Technologies 13 (2019) 1 (https://www.scientific-publications.net/en/article/1001874/)
• A. Fissel, A. R. Chaudhuri, J. Krügener, H. J. Osten (2019): Corrigendum to “Influence of (7×7)–“1×1” phase transition on step-free area formation inmolecular beam epitaxial growth of Si on Si(111)”,  Journal of Crystal Growth 524 (2019) 125155
  DOI: 10.1016/j.jcrysgro.2019.125155
• P. Gribisch, A. Roy Chaudhuri, A. Fissel (2019): Growth and Dielectric Properties of Monoclinic Gd2O3 on Si(001),  ECS Transactions 3 (2019) 57
  DOI: 10.1149/09301.0057ecst
• P. Gribisch, J. Schmidt, H.-J. Osten, A. Fissel (2019): Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001),  Acta Crystallographica Section B75 (2019) 59
  DOI: 10.1107/S2052520618017869
• A. R. Chaudhuri, A. Fissel, H. J. Osten (2017): Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation,  Journal of Materials Research 32 (2017) 699
  DOI: 10.1557/jmr.2017.22
• A. Grimm, A. Fissel, E. Bugiel, T. F. Wietler (2016): In situ observation of low temperature growth of Ge on Si(111) by reflection high energy electron diffraction,  Applied Surface Science 370 (2016) 40
  DOI: 10.1016/j.apsusc.2016.02.144
• K. Ghosh, S. Das, A. Fissel, H.J. Osten, A. Laha (2016): Long-Term Stability of Epitaxial (Nd₁₋ₓGdₓ)₂O₃ Thin Films Grown on Si(001) for Future CMOS Devices,  IEEE Transactions on Electron Devices 63 (2016) 2852
  DOI: 10.1109/TED.2016.2566681
• L. Wang, S. Dimitrijev, A. Fissel, G. Walker, J. Chai, L. Hold, A. Fernandes, N.-T. Nguyen, A. Iacopi (2016): Growth mechanism for alternating supply epitaxy: the unique pathway to achieve uniform silicon carbide films on multiple large-diameter silicon substrates,  RCS Advances 20 (2016) 16662
  DOI: 10.1039/C5RA24797G
• A. Fissel, A. R. Chaudhuri, J. Krügener, H.-J. Osten (2015): Influence of "1x1"- (7x7) phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si(111),  Journal of Crystal Growth 425 (2015) 154
  DOI: 10.1016/j.jcrysgro.2015.02.041
• A. Fissel, A. R. Chaudhuri, J. Krügener, P. Gribisch, H.-J. Osten (2015): Impact of surface phase coexistence on the development of step-free areas on Si(111),  Frontiers of Materials Science 9 (2015) 141
  DOI: 10.1007/s11706-015-0282-z
• A. R. Chaudhuri, A. Fissel, and H.-J. Osten (2015): Erratum:“Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si (100)”[Appl. Phys. Lett. 104 (2014) 012906],  Applied Physics Letters 106 (2015) 149903
  DOI: 10.1063/1.4917251
• A. R. Chaudhuri, H. J. Osten, and A. Fissel (2015): Impact of boron on the step-free area formation on Si(111) mesa structures,  Journal of Applied Physics 118 (2015) 245308
  DOI: 10.1063/1.4939160
• A. R. Chaudhuri, A. Fissel, H.-J. Osten (2014): Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100),  Applied Physics Letters 104 (2014) 012906
  DOI: 10.1063/1.4861470
• A. R. Chauhuri, A. Fissel, H.-J. Osten (2014): Enhanced Dielectric Properties of Nitrogen Doped Epitaxial Gd2O3 Thin Films on Si,  physica status solidi C 11 (2014) 1412
  DOI: 10.1002/pssc.201300596
• H.-J. Osten, A. Fissel (2014): Kristallstrukturengineering,  Unimagazin der Leibniz Universität Hannover 01/02 (2014) 50
• H.-J. Osten, D. Schwendt, A. R. Chaudhuri, A. Fissel, P. Shekhter, M. Eizenberg (2014): Tuning Dielectric Properties of Epitaxial Lanthanide Oxides on Silicon,  ECS Transactions 61 (2014) 3
  DOI: 10.1149/06102.0003ecst
• A. Laha, A. Fissel, H.-J. Osten (2013): Effective control on flat band voltage of epitaxial lanthanide oxide based MOS capacitors by interfacial carbon,  Applied Physics Letters 102 (2013) 202902
  DOI: 10.1063/1.4807588
• A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Investigation of band offsets and dc leakage properties of nitrogen doped epitaxial Gd2O3 thin films on Si,  Journal of Applied Physics 113 (2013) 184108
  DOI: 10.1063/1.4804245
• A. R. Chaudhuri, A. Fissel, V. R. Archakam, H.-J. Osten (2013): Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping,  Applied Physics Letters 102 (2013) 022904
  DOI: 10.1063/1.4775688
• J. Krügener, H.-J. Osten, A. Fissel (2013): Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7x7)-“1x1” surface phase transistion,  Surface Science 618 (2013) 27
  DOI: 10.1016/j.susc.2013.08.017
• K. Ghosh, S. Das, A. Fissel, H.-J. Osten, A. Laha (2013): Epitaxial Gd2O3 on strained Si1-xGex virtual substrate for next generation complementary metal oxide semiconductor device application,  Applied Physics Letters 103 (2013) 153501
  DOI: 10.1063/1.4824422
• A. Fissel, J. Krügener, H.-J. Osten (2012): Preparation of large step-free mesas on Si(111) by molecular beam epitaxy,  physica status solidi C 9 (2012) 2050
  DOI: 10.1002/pssc.201200139
• T. Breuer, U. Kerst, C. Boit, E. Langer, H. Ruelke, A. Fissel (2012): Conduction and material transport phenomena of degradation in electrically stressed ultra low-k dielectric before breakdown,  Journal of Applied Physics 112 (2012) 124103
  DOI: 10.1063/1.4768918
• A. Fissel, J. Krügener, H.-J. Osten (2011): Towards controlled molecular beam epitaxial growth of artificially layered Si structures,  Journal of Crystal Growth 323 (2011) 144
  DOI: 10.1016/j.jcrysgro.2010.12.001
• A. Laha, A. Bin, P. R. P. Babu, A. Fissel, H.-J. Osten (2011): Enhanced electrical properties of carbon doped epitaxial Gd2O3 thin films on silicon substrates,  ECS Transactions 41 (2011) 101
  DOI: 10.1149/1.3633025
• A. Laha, B. Ai, P. R. P. Babu, A. Fissel, H.-J. Osten (2011): Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties,  Applied Physics Letters 99 (2011) 152902
  DOI: 10.1063/1.3646104
• J. Krügener, H.-J. Osten, A. Fissel (2011): Ultraviolet photoelectron spectroscopic study of elemental boron adsorption and surface segregation on Si(111),  Physical Review B 83 (2011) 205303
  DOI: 10.1103/PhysRevB.83.205303
• A. Fissel, J. Krügener, D. Schwendt, H.J. Osten (2010): Role of boron and (√3x√3)-B surface defects on the growth mode of Si on Si(111),  A photoemission and electron diffraction study, physica status solidi A 207 (2010) 245
  DOI: 10.1002/pssa.200982433
• A. Fissel, R. Dargis, E. Bugiel, D. Schwendt, T. Wietler, J. Krügener, A. Laha, H.-J. Osten (2010): Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy,  Thin Solid Films 518 (2010) 2546
  DOI: 10.1016/j.tsf.2009.09.139
• A. Laha, A. Fissel, H.-J. Osten (2010): Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates,  Applied Physics Letters 96 (2010) 072903
  DOI: 10.1063/1.3318260
• H.-J. Osten, A. Laha, A. Fissel (2010): Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic Devices,  Proceedings of the 4th International Conference on Quantum, Nano and Micro Technologies (2010) 38
  DOI: 10.1109/ICQNM.2010.14
• J. X. Wang, T. Liu, Z. Wang, E. Bugiel, A. Laha, T. Watahiki, R. Shayduk, W. Braun, A. Fissel, H.-J. Osten (2010): Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si,  Materials Letters 64 (2010) 866
  DOI: 10.1016/j.matlet.2010.01.045
• R. Dargis, A. Fissel, D. Schwendt, J. Krügener, T. Wietler, A. Laha, E. Bugiel, H.-J. Osten (2010): Epitaxial growth and thermal stability of silicon layers on crystalline rare-earth metal oxides,  Vacuum 85 (2010) 523
  DOI: 10.1016/j.vacuum.2010.01.026
• A. Fissel, A. Laha, E. Bugiel, R. Dargis, A. Ali, H.J. Osten (2009): Tailoring of Si nanostructures embedded into epitaxial oxides for various applications,  World Journal of Engineering 6 (2009) 245
• A. Fissel, J. Krügener, H.-J. Osten (2009): Influence of boron on the initial stages of Si molecular beam epitaxy on Si(111) studied by reflection high-energy electron diffraction,  Surface Science 603 (2009) 477
  DOI: 10.1016/j.susc.2008.12.004
• A. Laha, E. Bugiel, M. Jestremski, R. Ranjith, A. Fissel, H.-J. Osten (2009): Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide,  Nanotechnology 20 (2009) 475604
  DOI: 10.1088/0957-4484/20/47/475604
• A. Laha, E. Bugiel, R. Dargis, D. Schwendt, M. Badylevich, V.V. Afanas’ev, A. Stesmans, A. Fissel, H.-J. Osten (2009): Integration of low dimensional crystalline Si into functional epitaxial oxides,  Microelectronics Journal 40 (2009) 633
  DOI: 10.1016/j.mejo.2008.06.064
• H.-J. Osten, A. Fissel, A. Laha (2009): Introducing Crystalline Rare-Earth Oxides into Si-based Electronics,  Proceedings of the XVth International Workshop on the Physics of Semiconductor Devices (IWPSD-2009) 107
• H.-J. Osten, A. Laha, A. Fissel (2009): Epitaxial Lanthanide Oxide based Gate Dielectrics,  MRS Proceedings 1155: CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications (2009) 97
  DOI: 10.1557/PROC-1155-C01-01
• J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, R. Shayduka, W. Braun, T. M. Liu, H.-J. Osten (2009): Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(111) substrates: a diffraction study,  Semiconductor Science and Technology 24 (2009) 045021
  DOI: 10.1088/0268-1242/24/4/045021
• J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, T. Liu, H.-J. Osten (2009): Structural Study of Epitaxially Grown Nano-thick Nd2O3/Si(111) Heterostructure,  Proceedings of the 4th IEEE Int. Conf. on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS) (2009) 431
  DOI: 10.1109/NEMS.2009.5068613
• R. Dargis, A. Fissel, E. Bugiel, D. Schwendt, T. Wietler, A. Laha, H.-J. Osten (2009): Epitaxial Growth and Properties of Silicon on Crystalline Rare-Earth-Metal Oxide for SOI Applications,  Material Science (MEDŽIAGOTYRA) 15 (2009) 11
• R. Dargis, A. Fissel, E. Bugiel, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2009): Development of multi-step procedure for epitaxial growth of crystalline silicon on rare-earth-metal oxide for SOI-applications,  e-Journal of Surface Science and Nanotechnology 7 (2009) 405
  DOI: 10.1380/ejssnt.2009.405
• R. Peibst, T. Dürkop, E. Bugiel, A. Fissel, I. Costina, K. R. Hofmann (2009): Driving mechanisms for the formation of nanocrystals by annealing of ultra-thin Ge layers in SiO2,  Physical Review B 79 (2009) 195316
  DOI: 10.1103/PhysRevB.79.195316
• T. F. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, H.-J. Osten (2009): Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(001) substrates,  Solid-State Electronics 53 (2009) 833
  DOI: 10.1016/j.sse.2009.04.027
• V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel (2009): Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3,  Applied Physics Letters 95 (2209) 102107
  DOI: 10.1063/1.3204019
• A. Fissel, D. Kühne, E. Bugiel, A. Laha, M. Czernohorsky, R. Dargis, H.-J. Osten (2008): Silicon in functional epitaxial oxides: A new group of nanostructures,  Microelectronics Journal 39 (2008) 512
  DOI: 10.1016/j.mejo.2007.11.007
• A. Fissel, J. Krügener, E. Bugiel, T. Block, H.-J. Osten (2008): Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes,  Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) (2008) 148
  DOI: 10.1109/COMMAD.2008.4802113
• A. Laha, A. Fissel, E. Bugiel, M. Badylevich, V. Afanasiev, H.-J. Osten (2008): Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application,  Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) (2008) 148
  DOI: 10.1109/COMMAD.2008.4802118
• A. Laha, D. Kühne, E. Bugiel, A. Fissel, H.-J. Osten (2008): Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applications,  Semiconductor Science and Technology 23 (2008) 085015
  DOI: 10.1088/0268-1242/23/8/085015
• A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2008): Si-nanoclusters embedded into epitaxial rare earth oxides: potential candidate for non-volatile memory applications,  Microelectronic Engineering 85 (2008) 2350
  DOI: 10.1016/j.mee.2008.09.030
• A. Laha, E. Bugiel, H.-J. Osten, A. Fissel (2008): Epitaxial Rare Earth Oxide Thin Film: Potential Candidate for Future Microelectronic Devices, Rare Earths: Research and Applications,  Editor: Keith N. Delfrey, Nova Science Publishers (2008) 301
  ISBN: 978-1-60456-218-7
• A. Laha, E. Bugiel, J. X. Wang, Q. Q. Sun, A. Fissel, H.-J. Osten (2008): Effect of domain boundaries on the electrical properties of crystalline Gd2O3 thin film,  Applied Physics Letters 93 (2008) 182907
  DOI: 10.1063/1.3009206
• H.-J. Osten, A. Laha, M. Czernohorsky, E. Bugiel, R. Dargis, A. Fissel (2008): Introducing crystalline rare-earth oxides into Si technologies,  physica status solidi A 205 (2008) 695
  DOI: 10.1002/pssa.200723509
• M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel (2008): Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals,  Microelectronic Engineering 85 (2008) 2382
  DOI: 10.1016/j.mee.2008.09.002
• Q.-Q. Sun, A. Laha, H.-J. Osten, S.-J. Ding, D. W. Zhang, A. Fissel (2008): Electrical Characterization of Ultrathin Single Crystalline Gd2O3/Si(100) with Pt Top Electrode,  Proceedings of the 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008) 1276
  DOI: 10.1109/ICSICT.2008.4734784
• Q.-Q. Sun, A. Laha, S.-J. Ding, D. W. Zhang, H.-J. Osten, A. Fissel (2008): Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method,  Applied Physics Letters 93 (2008) 083509
  DOI: 10.1063/1.2976325
• Q.-Q. Sun, S.-J. Ding, D. W. Zhang, A. Laha, H.-J. Osten, A. Fissel (2008): Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100),  Applied Physics Letters 92 (2008) 152908
  DOI: 10.1063/1.2912523
• V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel, W. Tian, L. F. Edge, D. G. Schlom (2008): Band offsets between Si and epitaxial rare earth sesquioxides (RE2O3, RE=La, Nd, Gd, Lu): Effect of 4f-shell occupancy,  Applied Physics Letters 93 (2008) 192105
  DOI: 10.1063/1.3003872
• A. Fissel, M. Czernohorsky, R. Dargis, H.-J. Osten (2007): Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application,  Material Science Forum 556-557 (2007) 655
  DOI: 10.4028/www.scientific.net/MSF.556-557.655
• A. Laha, A. Fissel, E. Bugiel, H.-J. Osten (2007): Epitaxial multi-component rare earth oxide for high-K application,  Thin Solid Films 515 (2007) 6512
  DOI: 10.1016/j.tsf.2006.11.070
• A. Laha, A. Fissel, H.-J. Osten (2007): Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application,  Applied Physics Letters 90 (2007) 113508
  DOI: 10.1063/1.2713142
• A. Laha, A. Fissel, H.-J. Osten (2007): Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: a route towards tuning the electrical properties,  Microelectronic Engineering 84 (2007) 2282
  DOI: 10.1016/j.mee.2007.04.051
• E. Bugiel, A. Fissel, M. Czernohorsky, A. Laha, H.-J. Osten (2007): Integration of Functional Epitaxial Oxides into Silicon: A TEM Investigation,  Microscopy and Microanalysis 13 (2007) 304
  DOI: 10.1017/S1431927607081524
• H.-J. Osten, A. Laha, M. Czernohorsky, R. Dargis, E. Bugiel, A. Fissel (2007): Crystalline Rare-Earth Oxides as High-k Materials for Future CMOS Technologies,  ECS Transactions 11 (2007) 287
  DOI: 10.1149/1.2779568
• H.-J. Osten, D. Kühne, A. Laha, M. Czernohorsky, E. Bugiel, A. Fissel (2007): Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures,  Journal of Vacuum Science & Technology B 25 (2007) 1039
  DOI: 10.1116/1.2720858
• H.-J. Osten, D. Kühne, E. Bugiel, A. Fissel (2007): Fabrication of single crystalline insulator/Si/insulator double barrier nanostructures using cooperative vapor-solid-phase epitaxy,  Physica E: Low-dimensional Systems and Nanostructures 38 (2007) 6
  DOI: 10.1016/j.physe.2006.12.012
• H.-J. Osten, E. Bugiel, M. Czernohorsky, Z. Elassar, O. Kirfel, A. Fissel (2007): Molecular Beam Epitaxy of Rare-Earth Oxides,  In Topics in Applied Physics Volume 106: Rare Earth Oxide Thin Films, Editors M. Fanciulli & G. Scarel, Springer-Verlag Berlin/Heidelberg (2007) 101
  DOI: 10.1007/11499893_7
  ISBN: 978-3-540-35796-4
• H.-J. Osten, M. Czernohorsky, R. Dargis, A. Laha, D. Kühne, E. Bugiel, A. Fissel (2007): Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures,  Microelectronic Engineering 84 (2007) 2222
  DOI: 10.1016/j.mee.2007.04.092
• M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel (2007): Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations,  Applied Physics Letters 90 (2007) 252101
  DOI: 10.1063/1.2746419
• A. Fissel, D. Kuehne, E. Bugiel, H.-J. Osten (2006): Novel Approach for Fabrication of Single-Crystalline Insulator/Si/Insulator Nanostructure,  MRS Proceedings 928: Current and Future Trends of Functional Oxide Films, Editors: D. Kumar, V. Craciun, M. Alexe, K. K. Singh (2006) 0928-GG03-04
  DOI: 10.1557/PROC-0928-GG03-04
• A. Fissel, D. Kühne, E. Bugiel, H.-J. Osten (2006): Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single crystalline insulator/Si/insulator nanostructures,  Applied Physics Letters 88 (2006) 153105
  DOI: 10.1063/1.2192979
• A. Fissel, D. Kühne, E. Bugiel, H.-J. Osten (2006): Fabrication of single-crystalline insulator/Si/insulator nanostructures,  Journal of Vacuum Science & Technology B 24 (2006) 2041
  DOI: 10.1116/1.2213266
• A. Fissel, E. Bugiel, C. L. Wang, H.-J. Osten (2006): Formation of twinning-superlattice regions by artificial stacking of Si layers,  Journal of Crystal Growth 290 (2006) 392
  DOI: 10.1016/j.jcrysgro.2006.02.009
• A. Fissel, E. Bugiel, C. R. Wang, H.-J. Osten (2006): Formation of Si twinning-superlattice; First steps towards Si-polytype growth,  Materials Science and Engineering: B 134 (2006) 138
  DOI: 10.1016/j.mseb.2006.06.046
• A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide,  Journal of Vacuum Science & Technology B 24 (2006) 2115
  DOI: 10.1116/1.2214702
• A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application,  Superlattices and Microstructures 40 (2006) 551
  DOI: 10.1016/j.spmi.2006.07.002
• A. Fissel, Z. Elassar, O. Kirfel, E. Bugiel, M. Czernohorsky, H.-J. Osten (2006): Interface Formation during Molecular beam Epitaxial Growth of Neodymium Oxide on Silicon,  Journal of Applied Physics 99 (2006) 074105
  DOI: 10.1063/1.2188051
• A. Laha, A. Fissel, E. Bugiel, H.-J. Osten (2006): Crystalline ternary rare earth oxides with capacitance equivalent thickness below 1 nm for high-K application,  Applied Physics Letters 88 (2006) 172107
  DOI: 10.1063/1.2198518
• A. Laha, E. Bugiel, H.J. Osten, A. Fissel (2006): Erratum: Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application [Applied Physics Letters 88, 172107 (2006)],  Applied Physics Letters 89 (2006) 139901
  DOI: 10.1063/1.2354313
• A. Laha, H.-J. Osten, A. Fissel (2006): Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application,  Applied Physics Letters 89 (2006) 143514
  DOI: 10.1063/1.2360209
• E. Bugiel, H.-J. Osten, A. Fissel, O. Kirfel, M. Czernohorsky (2006): TEM Investigations of Epitaxial High-k Dielectrics on Silicon,  Springer Proceedings in Physics 107: Microscopy of Semiconducting Materials, Editors A. G. Cullis & J. L. Hutchinson, Springer-Verlag Berlin Heidelberg (2006) 343
  DOI: 10.1007/3-540-31915-8_73
  ISBN: 978-3-540-31914-6
• H. D. B. Gottlob, T. Echtermeyer, M. Schmidt, T. Mollenhauer, J. K. Efavi, T. Wahlbrink, M. C. Lemme, M. Czernohorsky, E. Bugiel, A. Fissel, H.-J. Osten, H. Kurz (2006): 0.86 nm CET Gate Stacks with Epitaxial Gd2O3 High-K Dielectrics and FUSI NiSi Metal Electrodes,  IEEE Electron Device Letters 27 (2006) 814
  DOI: 10.1109/LED.2006.882581
• H. D. B. Gottlob, T. Echtermeyer, T. Mollenhauer, J. Efavi, M. Schmidt, T. Wahlbrink, M. C. Lemme, H. Kurz, M. Czernohorsky, E. Bugiel, H.-J. Osten, A. Fissel (2006): CMOS Integration of Epitaxial Gd2O3 High-K Gate Dielectrics,  Solid State Electronics 50 (2006) 979
  DOI: 10.1016/j.sse.2006.04.018
• H. D. B. Gottlob, T. Echtermeyer, T. Mollenhauer, M. Schmidt, J. K. Efavi, T. Wahlbrink, M. C. Lemme, H. Kurz, R. Endres, Y. Stefanov, U. Schwalke, M. Czernohorsky, E. Bugiel, A. Fissel, H.-J. Osten (2006): Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics,  Proceedings of the 36th European Solid-State Device Research Conference (2006) 150
  DOI: 10.1109/ESSDER.2006.307660
• H.-J. Osten, A. Fissel, O. Kirfel, Z. Elassar, E. Bugiel, M. Czernohorsky (2006): Interface formation during epitaxial growth of binary metal oxides on silicon,  Nano-Electronic Semiconductor Devices: Defects in High-k Gate Dielectric Stacks, Editor E. Gusev, Springer Netherlands (2006) 361
  DOI: 10.1007/1-4020-4367-8_29
  ISSN: 978-1-4020-4365-9
• H.-J. Osten, M. Czernohorsky, E. Bugiel, D. Kuehne, A. Fissel (2006): Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon,  MRS Proceedings 917: Gate Stack Scaling - Materials Selection, Role of Interfaces, and Reliability Implications, Editors: R. Jammy, A. Shanware, V. Misra, Y. Tsunashima, S. DeGendt (2006) 0917-E10-04
  DOI: 10.1557/PROC-0917-E10-04
• M. Czernohorsky, A. Fissel, E. Bugiel, O.Kirfel, H.-J. Osten (2006): Impact of Oxygen Supply during Growth on the Electrical Properties of Crystalline Gd2O3 Thin Films on Si(001),  Applied Physics Letters 88 (2006) 152905
  DOI: 10.1063/1.2194227
• A. Fissel (2005): Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC,  Materials Science Forum 483 (2005) 163
  DOI: 10.4028/www.scientific.net/MSF.483-485.163
• A. Fissel, C. Wang, E. Bugiel, H.J. Osten (2005): Epitaxial growth of non-cubic silicon,  Microelectronics Journal 36 (2005) 506
  DOI: 10.1016/j.mejo.2005.02.064
• E. Bugiel, H. J. Osten, A. Fissel, O. Kirfel, M. Czernohorsky (2005): TEM investigations of epitaxial high-k dielectrics on silicon,  Springer Proceedings in Physics 107 (2005) 343
  DOI: 10.1007/3-540-31915-8_73
• H.J. Osten, E. Bugiel, O. Kirfel, M. Czernohorsky, A. Fissel (2005): MBE growth and properties of epitaxial metal oxides for high-k dielectrics,  Journal of Crystal Growth 278 (2005) 18
  DOI: 10.1016/j.jcrysgro.2004.12.051
• H.J. Osten, J. Dabrowski, H.-J. Müssig, A. Fissel, V. Zavodinsky (2004): High-K dielectrics: the example of Pr2O3, Challenges in Process Simulation,  (ed.J. Dabrowski and E.R. Weber, Springer Verlag 2004), pp. 259-293
  DOI: 10.1007/978-3-662-09432-7_7
• A. Fissel (2003): Artificially layered heteropolytypic Structures based on SiC Polytypes: Molecular Beam Epitaxy, Characterization and Properties,  Physics Reports 379 (2003) 149
  DOI: 10.1016/S0370-1573(02)00632-4
• A. Fissel, H.J. Osten, E. Bugiel (2003): Towards understanding epitaxial growth of alternative high-k dielectrics on Si(001): Application to praseodymium oxide,  Journal of Vacuum Science and Technology B 21 (2003) 1765
  DOI: 10.1116/1.1589516
• A. Fissel, J. Dabrowski (2003): Si Adsorption on SiC(0001) Surfaces,  Surface Review and Letters 10 (2003) 849
  DOI: 10.1142/S0218625X03005645
• F. Bechstedt, A. Fissel, J. Furthmüller, U. Kaiser, H.-C. Weisker, W. Wesch (2003): Quantum structures in SiC,  Applied Surface Science 212-213 (2003) 820
  DOI: 10.1016/S0169-4332(03)00068-0
• H.J. Osten, E. Bugiel, A. Fissel (2003): Epitaxial Praseodymium Oxide: A New High-K Dielectric,  Material Research Society Symposium Proceeding 744 (2003) 15
  DOI: 10.1557/PROC-744-M1.5
• H.J. Osten, E. Bugiel, A. Fissel (2003): Epitaxial praseodymium oxide: a new high-k dielectric,  Solid-State Electronics 47 (2003) 2165
  DOI: 10.1016/S0038-1101(03)00190-4
• A. Fissel (2002): About heteropolytypic Structures: Molecular beam epitaxy, characterization and properties of Silicon Carbide,  Recent Research Developments in Materials Science and Engineering 1; Transworld Research Network, Fort P.O., Trivandrum, Kerala, India, 2002, pp. 277-327
  ISBN: 978-8178950570
• A. Fissel, J. Dabrowski, H.J. Osten (2002): Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001),  Journal of Applied Physics 91 (2002) 8986
  DOI: 10.1063/1.1471943
• F. Bechstedt, A. Fissel, U. Grossner, U. Kaiser, H.-C. Weisker, W. Wesch (2002): Towards quantum structures in SiC,  Materials Science Forum 389-393 (2002) 737
  DOI: 10.4028/www.scientific.net/MSF.389-393.737
• U. Kaiser, Th. Kups, A. Fissel, W. Richter (2002): Structure of SiC quantum wells studied by TEM and CBED,  Crystal Research and Technology 37 (2002) 466
  DOI: 10.1002/1521-4079(200205)37:5<466::AID-CRAT466>3.0.CO;2-I