Crystalline Oxides on Silicon

Silicon dioxide (SiO₂) has been used as a gate insulator in field-effect transistors since the 1950s. In each new generation of technology, the thickness of this insulating layer has to be reduced. However, a significant problem arises when these insulator layers become very thin. As the layer thickness decreases, there is an exponential increase in direct tunnel current (leakage current). For instance, with a three nanometer thick SiO₂ layer at one volt, you'd get a leakage current of about 10^-6 amperes per square centimeter. If you reduce the oxide thickness by a factor of two, the expected leakage current increases dramatically by six orders of magnitude, reaching around 0.5 amperes per square centimeter. This clearly shows that SiO₂ won't be suitable as a gate insulator for ultra-small and ultra-fast transistors in the future. To address this issue and reduce leakage currents through the gate insulator without altering the transistor's switching behavior, new materials with a higher dielectric constant than SiO₂ are required.

Currently, researchers worldwide are primarily focused on investigating amorphous high-k materials. These materials are highly ionic metal oxides with relatively low crystallization temperatures. When these temperatures are reached, they tend to form polycrystalline phases, which are unsuitable for use as gate insulators. This is primarily due to the high leakage currents that occur along the grain boundaries and the resulting increased surface roughness. For well-known high-k materials like HfO₂ or ZrO₂, these crystallization temperatures are typically surpassed during a CMOS process. While it's possible to take steps to raise the crystallization temperature (such as adding Si or Al), this approach is always a trade-off, as it tends to decrease the k value, limiting the achievable layer thickness. An alternative solution is to use epitaxially grown crystalline high-k materials, which eliminate the risk of subsequent crystallization. This approach significantly enhances thermal process stability. Additionally, it offers a well-defined interface with silicon, providing better opportunities for interface engineering. However, it's important to note that growing epitaxial high-k materials on silicon requires a degree of compatibility in terms of atomic spacing and lattice symmetry, limiting the range of suitable materials. Apart from various epitaxial perovskite structures, certain binary metal oxides, especially epitaxially grown binary rare-earth oxides (as seen in the figure), are considered potential candidates.

[Translate to English:] Diagramm der Gitterfehlanpassung verschiedener Selten-Erden-Oxide auf Silizium bzw. Germanium

[Translate to English:] Gerenderte Einheitszelle von Gd2O3

The MBE Institute has dedicated several years to the epitaxial growth of crystalline rare-earth oxides on silicon substrates. Specifically, we have been employing gadolinium oxide (Gd₂O₃) and neodymium oxide (Nd₂O₃) as model systems. Both of these oxides share the same crystallographic structure, but there's a key difference: the lattice spacing of Gd₂O₃ is smaller than that of silicon, while that of Nd₂O₃ is larger than silicon's. Previously, ternary mixed layers of the form (Gd1-xNd_x)₂O₃ (where x = 0 ...1), were grown directly on silicon. This allowed for controlling the lattice mismatch by adjusting the composition. As a result, valuable insights into how lattice strain influences the dielectric properties of these ternary layers were gained [1].

[1] D. Schwendt: Charakterisierung von binären und ternären Seltene Erden Oxiden, Dissertation, Gottfried-Wilhelm Leibniz Universität Hannover, 2012.

Crystalline Oxides on Silicon

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Crystalline Oxides on Silicon

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H. Genath, M. A. Schubert, H. L. Yamtomo, J. Krügener, H. J. Osten (2024): Epitaxial Growth of Nd2O3 layers on Virtual SiGe Substrates on Si(111), Journal of Applied Physics 135 (2024) 115302
DOI: 10.1063/5.0191350

K. Gosh, A. Fissl, H. J. Osten, A. R. Chaudhuri (2024): Interference-Modulated Excitonic Reflectance of Monolayer MoSe2 on Epitaxial Gd2O3 Thin Films, ACS Applied Optical Materials 2 (2024) 191
DOI: 10.1021/acsaom.3c00397

A. Nanwani, R. S. Pokharia, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra (2022): Improvement of crystal quality and surface morphology of Ge/Gd_2 O_3 /Si(111) epitaxial layers by cyclic annealing and regrowth, Journal of Physics D: Applied Physics 55 (2022) 115302
DOI: 10.1088/1361-6463/ac3f0d

K. Ghosh, A. Dhara, S. Dhara, A. Fissel, H.-J. Osten, A. R. Chaudhuri (2022): Integration of MoSe2 Monolayers with Epitaxial High-Κ Gd2O3 Substrate: Implication for High-Quality Emission and Modulation of Excitonic Quasiparticles, ACS Applied Nano Materials (2022)
DOI: 10.1021/acsanm.2c01767

A. Rawat, K. K. Roluahpuia, P. Gribisch, H.-J. Osten, A. Laha, S. Mahapatra, U. Ganguly (2021): Epitaxial Ge-Gd2O3 on Si(111) substrate by sputtering for germanium-on-insulator applications, Thin Solid Films 731 (2021) 138732
DOI: 10.1016/j.tsf.2021.138732

R. Sarkar, B. B. Upadhyay, S. Bhunia, R. S. Pokharia, D. Nag, S. Surapaneni, J. Lemettinen, S. Suihkonen, P. Gribisch, H.-J. Osten, S. Ganguly, D. Saha, A. Laha (2021): Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 K, IEEE Transactions on Electron Devices 68 (2021) 2653
DOI: 10.1109/TED.2021.3070838

A. Joseph, G. Lilienkamp, T. F. Wietler, H. J. Osten (2020): Ion-Implanted Epitaxially Grown Gd2O3 on Silicon with Improved Electrical Properties, Journal of Electronic Materials 49 (2020) 6270
DOI: 10.1007/s11664-020-08392-4

P. Gribisch, A. Fissel (2020): Tuning of structural and dielectric properties of Gd2O3 grown on Si(001), Journal of Applied Physics 128 (2020) 055108
DOI: 10.1063/5.0007793

P. Gribisch, A. Roy Chaudhuri, A. Fissel (2019): Growth and Dielectric Properties of Monoclinic Gd2O3 on Si(001), ECS Transactions 3 (2019) 57
DOI: 10.1149/09301.0057ecst

P. Gribisch, J. Schmidt, H.-J. Osten, A. Fissel (2019): Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001), Acta Crystallographica Section B75 (2019) 59
DOI: 10.1107/S2052520618017869

R. Sarkar, S. Bhunia, D. Nag, B. C. Barik, K. Das Gupta, D. Saha, S. Ganguly, A. Laha, J. Lemettinen, C. Kauppinen, I. Kim, S. Suihkonen, P. Gribisch, H.-J. Osten (2019): Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application, Applied Physics Letter 115 (2019) 063502
DOI: 10.1063/1.5109861

A. R. Chaudhuri, A. Fissel, H. J. Osten (2017): Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation, Journal of Materials Research 32 (2017) 699
DOI: 10.1557/jmr.2017.22

M. Moellers, C. Margenfeld, T. F. Wietler, H. J. Osten (2017): Growth of epitaxially stabilized, non-cubic Gd2O3 on silicon(111) substrates, Journal of Crystal Growth 480 (2017) 141
DOI: 10.1016/j.jcrysgro.2017.10.019

A. Joseph, D. Tetzlaff, J. Schmidt, R. Böttger, T. F. Wietler, H. J. Osten (2016): Formation and properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon, Journal of Applied Physics 120 (2016) 144103
DOI: 10.1063/1.4964431

H. J. Osten (2016): Epitaxial Oxides on Silicon for CMOS and Beyond, ECS Transactions 75 (2016) 109
DOI: 11.1149/07513.0109ecst

K. Ghosh, S. Das, A. Fissel, H.J. Osten, A. Laha (2016): Long-Term Stability of Epitaxial (Nd₁₋ₓGdₓ)₂O₃ Thin Films Grown on Si(001) for Future CMOS Devices, IEEE Transactions on Electron Devices 63 (2016) 2852
DOI: 10.1109/TED.2016.2566681

P. Shekhter, D. Schwendt, Y. Amouyal, T. F. Wietler, H. J. Osten, M. Eizenberg (2016): Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3, Journal of Applied Physics 120 (2016) 014101
DOI: 10.1063/1.4958301

A. R. Chaudhuri, A. Fissel, and H.-J. Osten (2015): Erratum:“Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si (100)”[Appl. Phys. Lett. 104 (2014) 012906], Applied Physics Letters 106 (2015) 149903
DOI: 10.1063/1.4917251

A. R. Chaudhuri, A. Fissel, H.-J. Osten (2014): Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100), Applied Physics Letters 104 (2014) 012906
DOI: 10.1063/1.4861470

A. R. Chauhuri, A. Fissel, H.-J. Osten (2014): Enhanced Dielectric Properties of Nitrogen Doped Epitaxial Gd2O3 Thin Films on Si, physica status solidi C 11 (2014) 1412
DOI: 10.1002/pssc.201300596

P. Shekhter, A. R. Chaudhuri, A. Laha, S. Yehezkel, A. Shriki, H.-J. Osten, M. Eizenberg (2014): The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric, Applied Physics Letters 105 (2014) 262901
DOI: 10.1063/1.4905356

A. Laha, A. Fissel, H.-J. Osten (2013): Effective control on flat band voltage of epitaxial lanthanide oxide based MOS capacitors by interfacial carbon, Applied Physics Letters 102 (2013) 202902
DOI: 10.1063/1.4807588

A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Investigation of band offsets and dc leakage properties of nitrogen doped epitaxial Gd2O3 thin films on Si, Journal of Applied Physics 113 (2013) 184108
DOI: 10.1063/1.4804245

A. R. Chaudhuri, A. Fissel, V. R. Archakam, H.-J. Osten (2013): Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping, Applied Physics Letters 102 (2013) 022904
DOI: 10.1063/1.4775688

H.-J. Osten (2013): Crystalline oxides on silicon, High Permittivity Gate Dielectric Materials, Ed. Samares Kar, Springers Series in Advanced Microelectronics 43 (2013) 395
ISBN: 978-3-642-36535-5

S. Islam, D. Mueller-Sajak, K. R. Hofmann, H. Pfnür (2013): Epitaxial thin films of BaSrO as gate dielectric, Microelectronic Engineering 109 (2013) 152
DOI: 10.1016/j.mee.2013.03.105

D. Müller-Sajak, S. Islam, H. Pfnür, K. R. Hofmann (2012): Temperature stability of ultra-thin mixed BaSr-oxide layers and their transformation, Nanotechnology 23 (2012) 305202
DOI: 10.1088/0957-4484/23/30/305202

D. Schwendt, H.-J. Osten, P. Shekhter, M. Eizenberg (2012): Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon, Applied Physics Letters 100 (2012) 232905
DOI: 10.1063/1.4727893

H.-J. Osten, D. Schwendt (2012): Strain Effects on Dielectric Properties of Thin, Crystalline Rare Earth Oxides on Silicon, ECS Transactions 50 (2012) 41
DOI: 10.1149/05004.0041ecst

A. Laha, A. Bin, P. R. P. Babu, A. Fissel, H.-J. Osten (2011): Enhanced electrical properties of carbon doped epitaxial Gd2O3 thin films on silicon substrates, ECS Transactions 41 (2011) 101
DOI: 10.1149/1.3633025

A. Laha, B. Ai, P. R. P. Babu, A. Fissel, H.-J. Osten (2011): Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties, Applied Physics Letters 99 (2011) 152902
DOI: 10.1063/1.3646104

E. Lipp, Z. Shahar, B. C. Bittel, P. M. Lenahan, D. Schwendt, H.-J. Osten, M. Eizenberg (2011): Trap-assisted conduction in Pt-gated Gd2O3/Si capacitors, Journal of Applied Physics 109 (2011) 073724
DOI: 10.1063/1.3573036

M. F. Beug, G. Tempel, K. R. Hofmann (2011): Gate-Side and Substrate-Side Oxide Trap and Interface State Generation in Conventional and Nitrided Tunnel Oxides of Floating Gate Cells, IEEE Transactions Electron Devices 58 (2011) 819
DOI: 10.1109/TED.2010.2102034

Y. Y. Gomeniuk, Y. V. Gomeniuk, A. N. Lazarov, V. S. Lysenko, H.-J. Osten, A. Laha (2011): Interface and bulk properties of high-K gadolinium and neodymium oxides on silicon, Advanced Materials Research 276 (2011) 167
DOI: 10.4028/www.scientific.net/AMR.276.167

A. Cosceev, D. Müller-Sajak, H. Pfnür, K. R. Hofmann (2010): Investigation of the electrical properties of the alkaline-earth oxides BaO, SrO and Ba0.7Sr0.3O on Si(001) as alternative gate dielectrics, Thin Solid Films 518 (2010) 281
DOI: 10.1016/j.tsf.2009.10.108

A. Fissel, R. Dargis, E. Bugiel, D. Schwendt, T. Wietler, J. Krügener, A. Laha, H.-J. Osten (2010): Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy, Thin Solid Films 518 (2010) 2546
DOI: 10.1016/j.tsf.2009.09.139

A. Laha, A. Fissel, H.-J. Osten (2010): Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates, Applied Physics Letters 96 (2010) 072903
DOI: 10.1063/1.3318260

A. Milanov, K. Xu, A. Laha, E. Bugiel, R. Ranjith, D. Schwendt, H.-J. Osten, H. Parala, R. Fischer, A. Devi (2010): Crystalline Gd2O3 thin films with high quality interface on Si(100) by low temperature H2O assisted atomic layer deposition process, Journal of the American Chemical Society 132 (2010) 36
DOI: 10.1021/ja909102j

H.-J. Osten, A. Laha, A. Fissel (2010): Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic Devices, Proceedings of the 4th International Conference on Quantum, Nano and Micro Technologies (2010) 38
DOI: 10.1109/ICQNM.2010.14

J. X. Wang, T. Liu, Z. Wang, E. Bugiel, A. Laha, T. Watahiki, R. Shayduk, W. Braun, A. Fissel, H.-J. Osten (2010): Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si, Materials Letters 64 (2010) 866
DOI: 10.1016/j.matlet.2010.01.045

R. Dargis, A. Fissel, D. Schwendt, J. Krügener, T. Wietler, A. Laha, E. Bugiel, H.-J. Osten (2010): Epitaxial growth and thermal stability of silicon layers on crystalline rare-earth metal oxides, Vacuum 85 (2010) 523
DOI: 10.1016/j.vacuum.2010.01.026

R. Ranjith, A. Laha, E. Bugiel, H.-J. Osten, K. Xu, A. P. Milanov, A. Devi (2010): Downscaling of defect-passivated Gd2O3 thin films on p-Si(001) wafers grown by H2O-assisted atomic layer deposition, Semiconductor Science and Technology 25 (2010) 105001
DOI: 10.1088/0268-1242/25/10/105001

A. Fissel, A. Laha, E. Bugiel, R. Dargis, A. Ali, H.J. Osten (2009): Tailoring of Si nanostructures embedded into epitaxial oxides for various applications, World Journal of Engineering 6 (2009) 245

A. Laha, E. Bugiel, R. Dargis, D. Schwendt, M. Badylevich, V.V. Afanas’ev, A. Stesmans, A. Fissel, H.-J. Osten (2009): Integration of low dimensional crystalline Si into functional epitaxial oxides, Microelectronics Journal 40 (2009) 633
DOI: 10.1016/j.mejo.2008.06.064

A. Nazarov, V. Lysenko, Y. Y. Gomeniuk, Y. V. Gomeniuk, H.-J. Osten, A. Laha (2009): Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon, ECS Meeting Abstracts 902 (2009) 2139
DOI: 10.1149/1.3206634

E. Lipp, H.-J. Osten, M. Eizenberg (2009): The thermal stability of Pt/ epitaxial Gd2O3 / Si stacks and its dependence on heat-treatment ambient, Journal of Applied Physics 106 (2009) 113505
DOI: 10.1063/1.3264674

H.-J. Osten, A. Fissel, A. Laha (2009): Introducing Crystalline Rare-Earth Oxides into Si-based Electronics, Proceedings of the XVth International Workshop on the Physics of Semiconductor Devices (IWPSD-2009) 107

H.-J. Osten, A. Laha, A. Fissel (2009): Epitaxial Lanthanide Oxide based Gate Dielectrics, MRS Proceedings 1155: CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications (2009) 97
DOI: 10.1557/PROC-1155-C01-01

J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, R. Shayduka, W. Braun, T. M. Liu, H.-J. Osten (2009): Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(111) substrates: a diffraction study, Semiconductor Science and Technology 24 (2009) 045021
DOI: 10.1088/0268-1242/24/4/045021

J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, T. Liu, H.-J. Osten (2009): Structural Study of Epitaxially Grown Nano-thick Nd2O3/Si(111) Heterostructure, Proceedings of the 4th IEEE Int. Conf. on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS) (2009) 431
DOI: 10.1109/NEMS.2009.5068613

M. C. Lemme, H. D. B. Gottlob, T. J. Echtermeyer, H. Kurz, R. Endres, U. Schwalke, M. Czernohorsky, D. Tetzlaff, H.-J. Osten (2009): Complementary metal oxide semiconductor integration of epitaxial Gd2O3, Journal of Vacuum Science & Technology B 27 (2009) 258
DOI: 10.1116/1.3054350

R. Dargis, A. Fissel, E. Bugiel, D. Schwendt, T. Wietler, A. Laha, H.-J. Osten (2009): Epitaxial Growth and Properties of Silicon on Crystalline Rare-Earth-Metal Oxide for SOI Applications, Material Science (MEDŽIAGOTYRA) 15 (2009) 11

R. Dargis, A. Fissel, E. Bugiel, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2009): Development of multi-step procedure for epitaxial growth of crystalline silicon on rare-earth-metal oxide for SOI-applications, e-Journal of Surface Science and Nanotechnology 7 (2009) 405
DOI: 10.1380/ejssnt.2009.405

T. F. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, H.-J. Osten (2009): Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(001) substrates, Solid-State Electronics 53 (2009) 833
DOI: 10.1016/j.sse.2009.04.027

V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel (2009): Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3, Applied Physics Letters 95 (2209) 102107
DOI: 10.1063/1.3204019

A. Fissel, D. Kühne, E. Bugiel, A. Laha, M. Czernohorsky, R. Dargis, H.-J. Osten (2008): Silicon in functional epitaxial oxides: A new group of nanostructures, Microelectronics Journal 39 (2008) 512
DOI: 10.1016/j.mejo.2007.11.007

A. Laha, A. Fissel, E. Bugiel, M. Badylevich, V. Afanasiev, H.-J. Osten (2008): Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application, Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) (2008) 148
DOI: 10.1109/COMMAD.2008.4802118

A. Laha, D. Kühne, E. Bugiel, A. Fissel, H.-J. Osten (2008): Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applications, Semiconductor Science and Technology 23 (2008) 085015
DOI: 10.1088/0268-1242/23/8/085015

A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2008): Si-nanoclusters embedded into epitaxial rare earth oxides: potential candidate for non-volatile memory applications, Microelectronic Engineering 85 (2008) 2350
DOI: 10.1016/j.mee.2008.09.030

A. Laha, E. Bugiel, H.-J. Osten, A. Fissel (2008): Epitaxial Rare Earth Oxide Thin Film: Potential Candidate for Future Microelectronic Devices, Rare Earths: Research and Applications, Editor: Keith N. Delfrey, Nova Science Publishers (2008) 301
ISBN: 978-1-60456-218-7

A. Laha, E. Bugiel, J. X. Wang, Q. Q. Sun, A. Fissel, H.-J. Osten (2008): Effect of domain boundaries on the electrical properties of crystalline Gd2O3 thin film, Applied Physics Letters 93 (2008) 182907
DOI: 10.1063/1.3009206

B. Raissi, J. Piscator, O. Engström, S. Hall, O. Buiu, M. C. Lemme, H. D. B. Gottlob, P. K. Hurley, K. Cherkaoui, H.-J. Osten (2008): High-K-oxide/silicon interfaces characterized by capacitance frequency spectroscopy, Solid-State Electronics 52 (2008) 1274
DOI: 10.1016/j.sse.2008.04.005

E. Lipp, M. Eizenberg, M. Czernohorsky, H.-J. Osten (2008): Effect of oxide structure on the Fermi-level pinning at metal/Gd2O3 interfaces, Applied Physics Letters 93 (2008) 193513
DOI: 10.1063/1.3028071

H.-J. Osten, A. Laha, M. Czernohorsky, E. Bugiel, R. Dargis, A. Fissel (2008): Introducing crystalline rare-earth oxides into Si technologies, physica status solidi A 205 (2008) 695
DOI: 10.1002/pssa.200723509

M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel (2008): Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals, Microelectronic Engineering 85 (2008) 2382
DOI: 10.1016/j.mee.2008.09.002

M. Czernohorsky, D. Tetzlaff, E. Bugiel, R. Dargis, H.-J. Osten, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, H. Kurz (2008): Stability of Crystalline Gd2O3 Thin Films on Silicon during Rapid Thermal Annealing, Semiconductor Science and Technology 23 (2208) 035010
DOI: 10.1088/0268-1242/23/3/035010

Q.-Q. Sun, A. Laha, H.-J. Osten, S.-J. Ding, D. W. Zhang, A. Fissel (2008): Electrical Characterization of Ultrathin Single Crystalline Gd2O3/Si(100) with Pt Top Electrode, Proceedings of the 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008) 1276
DOI: 10.1109/ICSICT.2008.4734784

Q.-Q. Sun, A. Laha, S.-J. Ding, D. W. Zhang, H.-J. Osten, A. Fissel (2008): Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method, Applied Physics Letters 93 (2008) 083509
DOI: 10.1063/1.2976325

Q.-Q. Sun, S.-J. Ding, D. W. Zhang, A. Laha, H.-J. Osten, A. Fissel (2008): Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100), Applied Physics Letters 92 (2008) 152908
DOI: 10.1063/1.2912523

V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel, W. Tian, L. F. Edge, D. G. Schlom (2008): Band offsets between Si and epitaxial rare earth sesquioxides (RE2O3, RE=La, Nd, Gd, Lu): Effect of 4f-shell occupancy, Applied Physics Letters 93 (2008) 192105
DOI: 10.1063/1.3003872

A. Fissel, M. Czernohorsky, R. Dargis, H.-J. Osten (2007): Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application, Material Science Forum 556-557 (2007) 655
DOI: 10.4028/www.scientific.net/MSF.556-557.655

A. Laha, A. Fissel, E. Bugiel, H.-J. Osten (2007): Epitaxial multi-component rare earth oxide for high-K application, Thin Solid Films 515 (2007) 6512
DOI: 10.1016/j.tsf.2006.11.070

A. Laha, A. Fissel, H.-J. Osten (2007): Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: a route towards tuning the electrical properties, Microelectronic Engineering 84 (2007) 2282
DOI: 10.1016/j.mee.2007.04.051

A. Laha, A. Fissel, H.-J. Osten (2007): Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application, Applied Physics Letters 90 (2007) 113508
DOI: 10.1063/1.2713142

A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H.-J. Osten (2007): Charge trapping in ultrathin Gd2O3 high-K dielectrics, Microelectronic Engineering 84 (2007) 1968
DOI: 10.1016/j.mee.2007.04.136

E. Bugiel, A. Fissel, M. Czernohorsky, A. Laha, H.-J. Osten (2007): Integration of Functional Epitaxial Oxides into Silicon: A TEM Investigation, Microscopy and Microanalysis 13 (2007) 304
DOI: 10.1017/S1431927607081524

E. Lipp, M. Eizenberg, M. Czernohorsky, H.-J. Osten (2007): Thermal Stability of Pt/ Epitaxial Gd2O3/ Si Stacks, Materials Research Society Symposium Proceedings 996 (2007) H03-08

H.-J. Osten, A. Laha, M. Czernohorsky, R. Dargis, E. Bugiel, A. Fissel (2007): Crystalline Rare-Earth Oxides as High-k Materials for Future CMOS Technologies, ECS Transactions 11 (2007) 287
DOI: 10.1149/1.2779568

H.-J. Osten, D. Kühne, A. Laha, M. Czernohorsky, E. Bugiel, A. Fissel (2007): Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures, Journal of Vacuum Science & Technology B 25 (2007) 1039
DOI: 10.1116/1.2720858

H.-J. Osten, E. Bugiel, M. Czernohorsky, Z. Elassar, O. Kirfel, A. Fissel (2007): Molecular Beam Epitaxy of Rare-Earth Oxides, In Topics in Applied Physics Volume 106: Rare Earth Oxide Thin Films, Editors M. Fanciulli & G. Scarel, Springer-Verlag Berlin/Heidelberg (2007) 101
DOI: 10.1007/11499893_7
ISBN: 978-3-540-35796-4

H.-J. Osten, M. Czernohorsky, R. Dargis, A. Laha, D. Kühne, E. Bugiel, A. Fissel (2007): Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures, Microelectronic Engineering 84 (2007) 2222
DOI: 10.1016/j.mee.2007.04.092

M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel (2007): Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations, Applied Physics Letters 90 (2007) 252101
DOI: 10.1063/1.2746419

A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide, Journal of Vacuum Science & Technology B 24 (2006) 2115
DOI: 10.1116/1.2214702

A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application, Superlattices and Microstructures 40 (2006) 551
DOI: 10.1016/j.spmi.2006.07.002

A. Fissel, Z. Elassar, O. Kirfel, E. Bugiel, M. Czernohorsky, H.-J. Osten (2006): Interface Formation during Molecular beam Epitaxial Growth of Neodymium Oxide on Silicon, Journal of Applied Physics 99 (2006) 074105
DOI: 10.1063/1.2188051

A. Laha, A. Fissel, E. Bugiel, H.-J. Osten (2006): Crystalline ternary rare earth oxides with capacitance equivalent thickness below 1 nm for high-K application, Applied Physics Letters 88 (2006) 172107
DOI: 10.1063/1.2198518

A. Laha, E. Bugiel, H.J. Osten, A. Fissel (2006): Erratum: Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application [Applied Physics Letters 88, 172107 (2006)], Applied Physics Letters 89 (2006) 139901
DOI: 10.1063/1.2354313

A. Laha, H.-J. Osten, A. Fissel (2006): Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application, Applied Physics Letters 89 (2006) 143514
DOI: 10.1063/1.2360209

E. Bugiel, H.-J. Osten, A. Fissel, O. Kirfel, M. Czernohorsky (2006): TEM Investigations of Epitaxial High-k Dielectrics on Silicon, Springer Proceedings in Physics 107: Microscopy of Semiconducting Materials, Editors A. G. Cullis & J. L. Hutchinson, Springer-Verlag Berlin Heidelberg (2006) 343
DOI: 10.1007/3-540-31915-8_73
ISBN: 978-3-540-31914-6

H. D. B. Gottlob, T. Echtermeyer, M. Schmidt, T. Mollenhauer, J. K. Efavi, T. Wahlbrink, M. C. Lemme, M. Czernohorsky, E. Bugiel, A. Fissel, H.-J. Osten, H. Kurz (2006): 0.86 nm CET Gate Stacks with Epitaxial Gd2O3 High-K Dielectrics and FUSI NiSi Metal Electrodes, IEEE Electron Device Letters 27 (2006) 814
DOI: 10.1109/LED.2006.882581

H. D. B. Gottlob, T. Echtermeyer, T. Mollenhauer, J. Efavi, M. Schmidt, T. Wahlbrink, M. C. Lemme, H. Kurz, M. Czernohorsky, E. Bugiel, H.-J. Osten, A. Fissel (2006): CMOS Integration of Epitaxial Gd2O3 High-K Gate Dielectrics, Solid State Electronics 50 (2006) 979
DOI: 10.1016/j.sse.2006.04.018

H. D. B. Gottlob, T. Echtermeyer, T. Mollenhauer, M. Schmidt, J. K. Efavi, T. Wahlbrink, M. C. Lemme, H. Kurz, R. Endres, Y. Stefanov, U. Schwalke, M. Czernohorsky, E. Bugiel, A. Fissel, H.-J. Osten (2006): Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics, Proceedings of the 36th European Solid-State Device Research Conference (2006) 150
DOI: 10.1109/ESSDER.2006.307660

H.-J. Osten, A. Fissel, O. Kirfel, Z. Elassar, E. Bugiel, M. Czernohorsky (2006): Interface formation during epitaxial growth of binary metal oxides on silicon, Nano-Electronic Semiconductor Devices: Defects in High-k Gate Dielectric Stacks, Editor E. Gusev, Springer Netherlands (2006) 361
DOI: 10.1007/1-4020-4367-8_29
ISSN: 978-1-4020-4365-9

H.-J. Osten, M. Czernohorsky, E. Bugiel, D. Kuehne, A. Fissel (2006): Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon, MRS Proceedings 917: Gate Stack Scaling - Materials Selection, Role of Interfaces, and Reliability Implications, Editors: R. Jammy, A. Shanware, V. Misra, Y. Tsunashima, S. DeGendt (2006) 0917-E10-04
DOI: 10.1557/PROC-0917-E10-04

M. Czernohorsky, A. Fissel, E. Bugiel, O.Kirfel, H.-J. Osten (2006): Impact of Oxygen Supply during Growth on the Electrical Properties of Crystalline Gd2O3 Thin Films on Si(001), Applied Physics Letters 88 (2006) 152905
DOI: 10.1063/1.2194227

E. Bugiel, H. J. Osten, A. Fissel, O. Kirfel, M. Czernohorsky (2005): TEM investigations of epitaxial high-k dielectrics on silicon, Springer Proceedings in Physics 107 (2005) 343
DOI: 10.1007/3-540-31915-8_73

M. F. Beug, R. Ferretti, K. R. Hofmann (2005): Polarity dependent generation of gate-side and substrate-side border traps in nitrided gate oxides, Microelectronic Engineering 80 (2005) 444
DOI: 10.1016/j.mee.2005.04.104

H.J. Osten, J. Dabrowski, H.-J. Müssig, A. Fissel, V. Zavodinsky (2004): High-K dielectrics: the example of Pr2O3, Challenges in Process Simulation, (ed.J. Dabrowski and E.R. Weber, Springer Verlag 2004), pp. 259-293
DOI: 10.1007/978-3-662-09432-7_7

A. Fissel, H.J. Osten, E. Bugiel (2003): Towards understanding epitaxial growth of alternative high-k dielectrics on Si(001): Application to praseodymium oxide, Journal of Vacuum Science and Technology B 21 (2003) 1765
DOI: 10.1116/1.1589516

H.J. Osten, E. Bugiel, A. Fissel (2003): Epitaxial Praseodymium Oxide: A New High-K Dielectric, Material Research Society Symposium Proceeding 744 (2003) 15
DOI: 10.1557/PROC-744-M1.5

H.J. Osten, E. Bugiel, A. Fissel (2003): Epitaxial praseodymium oxide: a new high-k dielectric, Solid-State Electronics 47 (2003) 2165
DOI: 10.1016/S0038-1101(03)00190-4

A. Fissel, J. Dabrowski, H.J. Osten (2002): Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001), Journal of Applied Physics 91 (2002) 8986
DOI: 10.1063/1.1471943

Konferenzbeitrag

U. Singh, H. Genath, R. Sarkar, J. Krügener, H.J. Osten, A. Laha (2023): All Epitaxy Nd2O3/AlGaN/GaN MOSHEMT on semi-insulating (0001) 4H-SiC: Increased thermal stability at 473 K, 14th International Conference on Nitride Semiconductors (ICNS14), Fukuoka, Japan, 12. - 17.11.2023

H. Genath, Y. Barnscheidt, H. J. Osten (2021): Epitaxy of Gd2O3 layers on virtual SiGe substrates on Si(111), German MBE Workshop 2021, online event, 14. - 15.10.2021

P. Gribisch, A. Fissel (2019): Tuning of morphology and crystal structure of Gd2O3 grown on Si(001), XXth International Workshop on the Physics of Semiconductor Devices (IWPSD 2019), Kolkata, India, 17.-20.12.2019

P. Gribisch, A. R. Chaudhuri, A. Fissel (2019): Growth and dielectric properties of monoclinic Gd2O3 on Si(001), 2nd Joint ISTDM / ICSI 2019 Conference, Madison, USA, 02.-06.06.2019
DOI: 10.1149/09301.0057ecst

A. Grimm, J. Ruhkopf, E. Bugiel, T. Wietler (2018): Epitaxial Gd2O3 as surface domain indicator: Towards single domain Ge films grown on Si by surfactant-mediated epitaxy, German MBE Workshop 2018, Freiburg, Germany, 11.-12.10.2018

P. Gribisch, J. Schmidt, H. J. Osten, A. Fissel (2018): Influence of Gd2O3 nanostructure formation on crystal structure and surface morphology during growth on Si(001), German MBE Workshop 2018, Freiburg, Germany, 11.-12.10.2018

A. Joseph, D. Tetzlaff, J. Schmidt, R. Böttger, T.F. Wietler, H.J. Osten (2016): Properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon, EMN Meeting on Epitaxy, Budapest, Hungary, 04.-08.09.2016

A. Joseph, D. Tetzlaff, J. Schmidt, R. Böttger, T.F. Wietler, H.J. Osten (2016): Properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon, Deutscher MBE-Workshop, Garching, Germany, 13.-14.10.2016

H. Genath, J. Schmidt, D. Tetzlaff, K. Gosh, A. Laha, and H.J. Osten (2016): Epitaxy of Gd2O3 Layers on Virtual GaN Substrates, LNQE Nanoday 2016, Hannover, Germany, 29.09.2016

A. R. Chaudhuri (invited) (2015): Tuning dielectric properties of epitaxial Lanthanide oxides on Si by defect passivation, Materials Research Society (MRS) Fall Meeting, Boston, USA, 29.11.-04.12.2015

E. Köhnen, J. Krügener, and H.J. Osten (2015): Surface passivation of ion implanted, Al2O3-passivated p+ emitters, LNQE Nanoday 2015, Hannover, Germany, 01.10.2015

M. Möllers, C. Margenfeld, D. Schwendt, E. Bugiel, T. F. Wietler, and H. J. Osten (2015): Non-cubic Gd2O3 on Silicon (111) Substrates, LNQE Nanoday 2015, Hannover, Germany, 01.10.2015

M. Möllers, C. Margenfeld, D. Schwendt, E. Bugiel, T. F. Wietler, and H. J. Osten (2015): Non-cubic Gd2O3 on Silicon (111) Substrates, Deutscher MBE-Workshop, Paderborn, Germany, 21.-22.09.2015

A. R. Chaudhuri, A. Fissel, H.-J. Osten (2014): Template assisted growth and dielectric properties of Gd2O3 thin films on Si(100), E-MRS 2014 Spring Meeting, Lille, France, 26.-30.05.2014

C. Margenfeld (2014): Thermally induced phase change of rare earth oxides, Deutscher MBE-Workshop, Darmstadt, Germany, 15.-16.09.2014

H.-J. Osten (invited), D. Schwendt, A. R. Chaudhuri, A. Fissel, P. Shekhter, M. Eizenberg (2014): Tuning Dielectric Properties of Epitaxial Lanthanide Oxides on Silicon, 225th Electrochemical Society Meeting, Orlando, Florida, USA, 11.-15.05.2014

K. Ghosh, S. Das, A. Fissel, H.-J. Osten, A. Laha (2014): Long term reliability study of epitaxial neodymium-gadolinium oxides (NGO) on Si substrates for future group IV based CMOS devices, E-MRS 2014 Spring Meeting, Lille, France, 26.-30.05.2014

P. Shekhter, A. R. Chaudhuri, A. Laha, S. Yehezkel, A. Shriki, H.-J. Osten, M. Eizenberg (2014): The influence of carbon doping on the electric behavior of Gd2O3 as high-k gate dielectric, AVS 61th International Symposium and Exhibition, Baltimore, Maryland, USA, 09.-14.11.2014

A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Enhanced Dielectric Properties of Nitrogen Doped Epitaxial Gd2O3 Thin Films on Si, E-MRS 2013 Fall Meeting, Warzaw, Poland, 16.-20.09.2013

A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Enhanced Dielectric Properties of Nitrogen Doped Epitaxial Gd2O3 Thin Films on Si, NanoDay 2013, Hannover, Germany, 10.10.2013

A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Improving Dielectric Properties of Epitaxial Gd2O3 Thin Films on Si by Dopant Incorporation, 30th North American Conference on Molecular Beam Epitaxy (NAMBE 2013), Banff, Alberta, Canada, 05.-11.10.2013

D. Schwendt, P. Shekhter, M. Eizenberg, H.-J. Osten (2013): Tuning the properties of rare-earth oxides for advanced nano-electronic applications, First Conference of Scientific Cooperation between Lower Saxony and Israel, Hannover, Germany, 06.-07.10.2013

H.-J. Osten (invited) (2013): Improving Dielectric Properties of Epitaxial Lanthanide Oxides on Silicon, AVS 60th International Symposium and Exhibition, Long Beach, California, USA, 27.10.-01.11.2013

D. Schwendt (2012): Spannungseffekte in dünnen, epitaktischen Seltene Erden-Oxiden, Deutscher MBE-Workshop, Hannover, Germany, 11.-12.09.2012

D. Schwendt, H.-J. Osten (2012): Influence of strain on dielectric properties of rare earth oxides, 17th Workshop on Dielectrics in Microelectronics (WoDiM 2012), Dresden, Germany, 25.-27.06.2012

H.-J. Osten (2012): Epitaxial Oxides on Silicon for CMOS and Beyond, Indian Institute of Technology Hyderabad, Hyderabad, India, 13.12.2012

H.-J. Osten (invited) (2012): Strain-driven enhancement of dielectric properties in thin metal oxides layers epitaxially grown on silicon, International Conference on Emerging Electronics (ICEE), Mumbai, India, 15.-17.12.2012

H.-J. Osten (invited), D. Schwendt (2012): Strain Effects on Dielectric Properties of Thin, Crystalline Rare Earth Oxides on Silicon, 222th Electrochemical Society Meeting, Honolulu, Hawaii, USA, 07.-12.10.2012

A. Grimm, D. Schwendt, H.-J. Osten (2011): Structural investigation of epitaxial high-k gate dielectrics, Deutscher MBE-Workshop 2011, Berlin, Germany, 05.-06.10.2011

D. Schwendt, H.-J. Osten (2011): Photoelectron spectroscpoy of ultrathin epitaxial rare earth oxides on silicon, Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Dresden, Germany, 13.-18.03.2011

H.-J. Osten (invited) (2011): Epitaxial Lanthanide Oxides on Silicon for CMOS and Beyond, 7th International Conference on Si Epitaxy and Heterostructures (ICSI 7), Leuven, Belgium, 28.08.-01.09.2011

H.-J. Osten (invited) (2011): Epitaxial Oxides on Silicon for CMOS and Beyond, 38th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI), San Diego, California, USA, 16.-20.01.2011

A. Laha, E. Bugiel, H.-J. Osten, A. Fissel, V. V . Afanas’ev, M. Badylevich (2010): Semiconductor Nanostructures in Crystalline Rare Earth Oxide for Nanoelectronic Device Applications, 22nd International Conference on Microelectronics (ICM2010), 2010, Cairo, Egypt, 19.-22.12.2010
DOI: 10.1109/ICM.2010.5696129

D. Müller-Sajak, H. Pfnür, A. Cosceev, K. R. Hofmann (2010): Crystalline lattice-matched B 0.7Sr0.3O on Si(001) as Gate Dielectric, Electronic Materials Conference, Notre-Dame, Indiana, USA, 23.-25.06.2010

D. Schwendt, E. Bugiel, H.-J. Osten (2010): Tuning the Properties of Crystalline Lanthanide Oxides on Silicon, International Symposium on Integrated Functionalities (ISIF) 2010, San Juan, Puerto Rico, 13.-16.06.2010

H.-J. Osten (invited) (2010): Introducing Crystalline Rare-Earth Oxides into Si-based Electronics, International Symposium on Integrated Functionalities (ISIF) 2010, San Juan, Puerto Rico, 13.-16.06.2010

H.-J. Osten, A. Laha, A. Fissel (2010): Si Nanostructures Embedded into Crystalline Rare-Earth Oxide Matrix for Opto and Nano Electronic Applications, 4th International Conference on Quantum, Nano and Micro Technologies (ICQNM 2010), Sint Maarten, Netherlands Antilles, 10.-16.02.2010

R. Endres, H. Gottlob, M. Schmidt, D. Schwendt, H.-J. Osten, U. Schwalke (2010): Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations, 218th ECS Meeting, Las Vegas, Nevada, USA, 10.-15.10.2010

R. Ranjith, A. Laha, E. Bugiel, H.-J. Osten (2010): Growth and studies of ultra thin Gd2O3 layers and Gd2O3/Si/Gd2O3 stacking on p-Si(111) wafers by molecular beam epitaxy for resonant tunnel diode applications, 16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010

A. Fissel, A. Laha, E. Bugiel, R. Dargis, A. Ali, H. J. Osten (2009): Tailoring of Si nanostructures embedded into epitaxial oxides for various applications, 17th International Conference on Composites/Nano Engineering (ICCE-17), Honolulu, USA, 26.07.-01.08.2009

A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2009): Epitaxial Gd2O3 on strained Si1-xGex layers: Growth and electrical characterization, E-MRS 2009, Symposium I, Strasbourg, France, 08.-12.06.2009

A. Laha, M. Jestremski, E. Bugiel, D. Wong, A. Fissel, H.-J. Osten, Ashkar Ali, S. Datta (2009): Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano-electronic Device Application, 2009 International Conference on Mechanical and Electronics Engineering (ICMEE), Chennai, India, 27.-29.06.2009

A. Laha, M. Jestremski, E. Bugiel, D. Wong, and H.-J. Osten, A. Fissel, A. Ali, S. Datta (2009): Quantum Effects in Group IV Nanostructures Embedded into Crystalline Rare Earth Oxides on Silicon Substrates, International Conference on Materials for Advanced Technologies (ICMAT2009), Singapore, 28.06.-03.07.2009

A. N. Nazarov, V. S. Lysenko, Y. V.Gomeniuk, Y. Y.Gomeniuk, H.-J. Osten, A. Laha (2009): Interface and bulk properties of MBE-grown rare-earth metal oxides on silicon, 216th ECS Meeting, Wien, Austria, 04.-09.10.2009

D. Müller-Sajak, A. Cosceev, H. Pfnür, K. R. Hofmann (2009): Investigation of Epitaxy and Electrical Properties of the Alkaline-Earth Oxides BaO, SrO and Ba0.7Sr0.3O on Si(001) as Alternative Gate Dielectrics, 6th International Conference on Silicon Epitaxy and Heterostructures, ICSI-6, Los Angeles, USA, 17.-22.05.2009

D. Schwendt, D. Tetzlaff, E. Bugiel, H.-J. Osten (2009): Stability of Crystalline Gd2O3 Thin Films on Silicon during Post-growth Processing, 3rd International Conference on Signals, Circuits and Systems (SCS’09), Djerba, Tunesia, 06.-08.11.2009

H.-J. Osten (invited) (2009): Introducing Crystalline Rare-Earth Oxides into Si-based Electronics, XVth International Workshop on the Physics of Semiconductor Devices (XVth IWPSD), Delhi, India, 15.-19.12.2009

H.-J. Osten (invited) (2009): Epitaxy of High-K Oxides, 15th Euro-MBE, Zakopane, Poland, 08.-11.03.2009

H.-J. Osten, A. Laha, A. Fissel (invited) (2009): Epitaxial Lanthanide Oxide based Gate Dielectrics, MRS Spring Meeting, San Francisco, California, USA, 13.-17.04.2009

J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, T. Liu, H.-J. Osten (2009): Structural Study of Epitaxially Grown Nano-thick Nd2O3/Si(111) Heterostructure, 4th IEEE Int. Conf. on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS), Shenzhen, China, 05.-08.01.2009

K. R. Hofmann, A. Cosceev, D. Müller-Sajak, H. Pfnür (2009): Crystalline lattice-matched Ba0.7Sr0.3O on Si(001) as Gate Dielectric, IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, USA, 03.-05.12.2009

R. Dargis, A. Fissel, D. Schwedt, E. Bugiel, J. Krügener, T. Wietler, A. Laha, H.-J. Osten (2009): Epitaxial Growth of Silicon on Rare-Earth Metal oxide, 4th Symposium on Vacuum based Science and Technology, Koszalin-Kolobrzeg, Poland, 21.-23.09.2009

A. Laha, A. Fissel, E. Bugiel, M. Badylevich, V. Afanas'ev, H.-J. Osten (2008): Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application, Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) 2008, Sydney, Australia, 28.07.-01.08.2008

A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2008): Si-nanoclusters embedded into epitaxial rare earth oxides: potential candidate for non-volatile memory applications, E-MRS Meeting 2008, Strasbourg, France, 27.-31.05.2008

A. Laha, E. Bugiel, R. Dargis, D. Schwendt, M. Badylevich, V. Afanasiev, A. Fissel, H.-J. Osten (2008): Integration of low dimensional crystalline Si into functional epitaxial oxides, Workshop on Recent Advances of Low Dimensional Structures and Devices (WRA-LDSD) Nottingham, UK, 07.-09.04.2008

M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans A. Laha, H.-J. Osten, A. Fissel (2008): Electronic structure of interfaces of cubic Gd2O3 with Si(111) and Si nano-clusters, E-MRS Meeting 2008, Strasbourg, France, 27.-31.05.2008

M. C. Lemme, H. D. B. Gottlob, T. J. Echtermeyer, H. Kurz, R. Endres, U. Schwalke, M. Czernohorsky, H.-J. Osten (2008): CMOS Integration of Epitaxial Gd2O3, 5th Workshop on Dielectrics in Microelectronics (WoDiM), Bad Saarow, Germany, 23.-25.06.2008

Q.-Q. Sun, A. Laha, H.-J. Osten, S.-J. Ding, D. W. Zhang, A. Fissel (2008): Electrical Characterization of Ultrathin Single Crystalline Gd2O3/Si(100) with Pt Top Electrode, 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Beijing, China, 20.-23.10.2008

R. Dargis, A. Fissel, E. Bugiel, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2008): Development of multi-step procedure for epitaxial growth of crystalline silicon on rare-earth-metal oxide for SOI-applications, 14th International Conference on Solid Films and Surfaces (ICSFS), Dublin, 29.06.-04.07.2008

T. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, H.-J. Osten (2008): Epitaxial growth of Gd2O3 on Ge films grown by surfactant-mediated epitaxy on Si(001) substrates, 4th International SiGe Technology and Device Meeting (ISTDM 2008), Taiwan, 11.-14.05.2008

A. Fissel, D. Kühne, E. Bugiel, A. Laha, M. Czernohorsky, R. Dargis, H.-J. Osten (2007): Silicon in functional epitaxial oxides: A new group of nanostructures, The 6th International Conference on Low Dimensional Structures and Devices (LDSD), San Andres, Colombia, 15.-20.04.2007

A. Laha, A. Fissel, H.-J. Osten (2007): Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: A route towards tuning the electrical properties, 15th Conference on Insulating Films on Semiconductors (INFOS), Athens, Greece, 20.-23.06.2007

A. Laha, D. Kühne, E. Bugiel, A. Fissel, H.-J. Osten (2007): Confining single crystal Si-nanoclsuters into epitaxial rare earth oxides: Taking advantage of quantum phenomena to pratical applications, IUMRS-ICAM, Bangalore, India, 08.-13.10.2007

A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H.-J. Osten (2007): Charge trapping in ultrathin Gd2O3 high-k dielectric, 15th Conference on Insulating Films on Semiconductors (INFOS), Athens, Greece, 20.-23.06.2007

B. Raissi, J. Piscator, O. Engström, S. Hall, O. Buiu, M. C. Lemme, H. D. B. Gottlob, P. K. Hurley, K. Cherkaoui, and H.-J. Osten (2007): High-K-oxide/silicon interfaces characterized by capacitance frequency spectroscopy, 37th European Solid-State Device Research Conference, München, Germany, 11.-13.09.2007

E. Bugiel, A. Fissel, M. Czernohorsky, A. Laha, H.-J. Osten (invited) (2007): Integration of Functional Epitaxial Oxides into Silicon: A TEM Investigation, Microscopy Conference, Saarbrücken, 02.-07.09.2007

E. Lipp, M. Eizenberg, M. Czernohorsky, H.-J. Osten (2007): Thermal stability of Pt/Epitaxial Gd2O3/Si Stacks, MRS Spring Meeting 2007, San Francisco, California, USA, 09.-13.04.2007

H.-J. Osten (invited) (2007): Crystalline Rare-Earth Oxides as High-k Materials for Future CMOS Technologies, 212th ECS Meeting, Washington, D.C., USA, 07.-12.10.2007

H.-J. Osten (invited) (2007): From high-K application to nanostructures: Integration of epitaxial gadolinium oxide into silicon, 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France 20.-24.05.2007

H.-J. Osten, D. Kühne, A. Laha, R. Dargis, M. Czernohorsky, E. Bugiel, A. Fissel (invited) (2007): Integration of Functional Epitaxial Oxides into Silicon: From High-K Application to Nanostructures, Jahrestagung der Deutsche Physikalischen Gesellschaft, Regensburg, Germany, 25.-30.03.2007

H.-J. Osten, M. Czernohorsky, R. Dargis, A. Laha, D. Kühne, E. Bugiel, A. Fissel (invited) (2007): Integration of functional epitaxial oxides into silicon: From high-k application to nanostructures, 15th Conference on Insulating Films on Semiconductors (INFOS), Athens, Greece, 20.-23.06.2007

A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Properties of crystalline rare-earth oxide high-k dielectrics grown by molecular beam epitaxy on silicon carbide, E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006

A. Fissel, M. Czernohorsky, R. Dargis, H.-J. Osten (2006): Growth and Properties of Crystalline Gadolinium Oxide Dielectric Layers On Silicon Carbide for High-K Application, 6th European Conference on Silicon Carbide and Related Materials (ECSCRM), Newcastle upon Tyne, UK, 03.-07.09.2006

A. Laha, A. Fissel, E. Bugiel, H.-J. Osten (2006): Comparative Investigation of Epitaxial Gd2O3 Thin Films Grown on Si Substrates with Different Orientations for High-K Application, 48th Electronic Materials Conference, Pennsylvania State University, Pennsylvania, USA, 28.-30.06.2006

A. Laha, A. Fissel, E. Bugiel, O. Kirfel, H.-J. Osten (2006): Epitaxial multi-component rare earth oxide for high-K application, E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006

H.-J. Osten (invited) (2006): MBE growth and Properties of Crystalline Oxide/Silicon/Oxide Nanostructures, ESF Exploratory Workshop, Como, Italy, 12.-13.09.2006

H.-J. Osten, A. Laha, A. Fissel (2006): Influence of Si substrate orientation on growth and electrical properties of epitaxial Gd2O3 thin films for high-κ application, 37th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, 06.-09.12.2006

H.-J. Osten, D. Kühne, A. Laha, M. Czernohorsky, E. Bugiel, A. Fissel (2006): Integration of functional epitaxial oxides into silicon: From high-k application to nanostructures, 24th North American Conference on Molecular Beam Epitaxy, Durham, North Carolina, USA, 08.-11.10.2006

H.-J. Osten, M. Czernohorsky, E. Bugiel, D. Kühne, A. Fissel (2006): Interface engineering during epitaxial growth of high-k lanthanide oxides on silicon, MRS Spring Meeting 2006, San Francisco, California, USA, 18.-21.04.2006

M. Czernohorsky, A. Fissel, H.-J. Osten (2006): Characterization of crystalline rare-earth oxide high-k dielectrics grown by molecular beam epitaxy on silicon carbide, 33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI), Cocoa Beach, Florida, USA, 15.-19.01.2006

M. Czernohorsky, A. Fissel, R. Dargis, E. Bugiel, H.-J. Osten (2006): Wachstum von kristallinem Gadoliniumoxid auf Silicium, Deutscher MBE Workshop, Hamburg, Germany, 26.-27.09.2006

O. Kerker, T. F. Wietler, K. R. Hofmann (2006): Characterization of HfO2 deposited by reactive sputtering as gate dielectric for epitaxial Ge-MOSFETs on Si wafers, E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006

R. Dargis, A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Epitaxie von Gadoliniumoxid auf Siliziumcarbid, Deutscher MBE Workshop, Hamburg, Germany, 26.-27.09.2006

A. Fissel, O. Kirfel, Z. Elassar, E. Bugiel, M. Czernohorsky, H. J. Osten (2005): Interface formation during epitaxial growth of Neodymium Oxide on Si(001), 207th Electrochemical Society Meeting, Quebec (Canada), 15.-20.05.2005

E. Bugiel, H.J. Osten, A. Fissel, O. Kirfel, M. Czernohorsky (2005): TEM investigations of Epitaxial High-k Dielectrics on Silicon, Microscopy of Semiconductor Materials (MSM) XIV Conference, Oxford (UK), 11.-14.04.2005

H.-J. Osten (2005): Interface formation during epitaxial growth of binary metal oxide on silicon, NATO workshop Defects in High-K Materials, St. Petersburg, Russia, 11.-14.07.2005

H.-J. Osten (invited) (2005): MBE of rare earth oxides, European Science Foundation, Exploratory Workshop, San Remo, Italy, 11.-13.05.2005

H.D.B. Gottlob, T. Echtermeyer, T. Mollenhauer, J. Efavi, M. Schmidt, T. Wahlbrik, M.C. Lemme, H. Kurz, M. Czernohorsky, E. Bugiel, H.J. Osten, O. Kirfel, A. Fissel (2005): Crystalline Gd2O3 High-k Gate Dielectrics with TiN Capped Fully Silicided (FUSI) NiSi Electrodes, 36th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington (USA), 01.-03.12.2005

M. Czernohorsky, O. Kirfel, Z. Elassar, E. Bugiel, A. Fissel, H.-J. Osten (2005): MBE Growth and Interface Formation of Neodymium Oxide on Silicon, 13th Euro-Konferenz Molecular Beam Epitaxy, Grindelwald, Switzerland, 07.-09.03.2005

M. F. Beug, R. Ferretti, K. R. Hofmann (2005): Polarity dependent generation of gate-side and substrate-side border traps in nitrided gate oxides, Insulating Films on Semiconductors, INFOS 2005, Leuven, Belgium, 22.-24.06.2005

O. Kerker, J. Zachariae, F. Mirza, R. Ferretti, K. R. Hofmann (2005): Investigation of Electrical and Optical Properties of BaxSr1-xO Gate Oxide MIS Structures, DPG-Frühjahrstagung, Berlin, Germany, 04.-09.03.2005

H.-J. Osten, E. Bugiel, A. Fissel, O. Kirfel (invited) (2004): Epitaxial Silicon/Metal Oxide Stacks for various applications, 11th Advanced Heterostructure Workshop, Hawaii, USA, 05.-10.12.2004

A. Fissel, H.-J. Osten, and E. Bugiel (invited) (2003): Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to Praseodymium Oxide, Physics and Chemistry of Semiconductor Interfaces, Salt Lake City, Utah, USA, 19.-23.01.2003

F. Beug, R. Ferretti, K. R. Hofmann (2003): Detailed investigation of the transient local tunneling in gate oxides, 2003 IEEE International Reliability Physics Symposium, Dallas, Texas, USA, 30.03.-04.04.2003

H.-J. Osten, A. Bugiel, A. Fissel (invited) (2003): Understanding epitaxial growth of alternative high-K dielectrics on Si(001), ESF Workshop, Zürich, Switzerland, 17.-18.03.2003

H.-J. Osten, A. Fissel (invited) (2003): Epitaxial High-K Materials, 12th EURO-MBE 2002, Bad Hofgastein, Austria, 16.-19.02.2003

H.-J. Osten, E. Bugiel, A. Fissel (2002): Epitaxial Praseodymium Oxide: A New High-K Dielectric, 9th International Workshop on Oxide Electronics (WOE), St. Peter Beach, Florida, Oct. 2002

H.-J. Osten, E. Bugiel, A. Fissel (invited) (2002): Epitaxial Praseodymium Oxide: A New High-K Dielectric, Material Research Society, Fall Meeting, Symp. M, Boston, 02.-05.12.2002

U. Schwalke, K. Boye, K. Haberle, R. Heller, G. Hess, G. Müller, T. Ruland. G. Tzschöckel, H.-J. Osten, A. Fissel, H. J. Müssig (invited) (2002): Process Integration of Crystalline Pr2O3 High-K Gate Dielectrics, 32th European Solid-State Device Research Conference (ESSDERC 2002), Firenze, Italy, 24.-26.09.2002
Ongoing Projects
»Category – Research«

Nanowire Field Effect Transistor with epitaxial Gd2O3 as wraparound gate oxide

In this project, which is being carried out together with colleagues from the Indian Institute of Technology Bombay (https://www.iitb.ac.in/), the aim is to use functional epitaxial oxides for the production of Gate All Around (GAA) transistors. Nanowires of gallium nitride, which have extremely high charge carrier mobilities, are to be used as channel material. Within the framework of this project, the MBE will carry out the epitaxial growth of the oxide layers, while the IITB partners will manufacture the nanowires and electrically characterise the structures.

Led by: Prof. H. Jörg Osten

Year: 2020

Funding: DAAD

Duration: 2020 - 2023

Crystalline Oxides on Silicon

Journal

Konferenzbeitrag

»Category – Research«