Publikationen

Journal

• H. Genath, M. A. Schubert, H. L. Yamtomo, J. Krügener, H. J. Osten (2024): Epitaxial Growth of Nd2O3 layers on Virtual SiGe Substrates on Si(111),  Journal of Applied Physics 135 (2024) 115302
  DOI: 10.1063/5.0191350
• K. Gosh, A. Fissl, H. J. Osten, A. R. Chaudhuri (2024): Interference-Modulated Excitonic Reflectance of Monolayer MoSe2 on Epitaxial Gd2O3 Thin Films,  ACS Applied Optical Materials 2 (2024) 191
  DOI: 10.1021/acsaom.3c00397
• A. Nanwani, R. S. Pokharia, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra (2022): Improvement of crystal quality and surface morphology of Ge/Gd_2 O_3 /Si(111) epitaxial layers by cyclic annealing and regrowth,  Journal of Physics D: Applied Physics 55 (2022) 115302
  DOI: 10.1088/1361-6463/ac3f0d
• H. Genath, J. Norberg, B. Wolpensinger, H.-J. Osten (2022): Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates,  Thin Solid Films (2022) 139561
  DOI: 10.1016/j.tsf.2022.139561
• K. Ghosh, A. Dhara, S. Dhara, A. Fissel, H.-J. Osten, A. R. Chaudhuri (2022): Integration of MoSe2 Monolayers with Epitaxial High-Κ Gd2O3 Substrate: Implication for High-Quality Emission and Modulation of Excitonic Quasiparticles,  ACS Applied Nano Materials (2022)
  DOI: 10.1021/acsanm.2c01767
• A. Rawat, K. K. Roluahpuia, P. Gribisch, H.-J. Osten, A. Laha, S. Mahapatra, U. Ganguly (2021): Epitaxial Ge-Gd2O3 on Si(111) substrate by sputtering for germanium-on-insulator applications,  Thin Solid Films 731 (2021) 138732
  DOI: 10.1016/j.tsf.2021.138732
• J. Krügener, M. Rienäcker, S. Schäfer, M. Sanchez, S. Wolter, R. Brendel, S. John, H. J. Osten, R. Peibst (2021): Photonic crystals for highly efficient silicon single junction solar cells,  Solar Energy Materials and Solar Cells 233 (2021) 111337
  DOI: 10.1016/j.solmat.2021.111337
• R. Sarkar, B. B. Upadhyay, S. Bhunia, R. S. Pokharia, D. Nag, S. Surapaneni, J. Lemettinen, S. Suihkonen, P. Gribisch, H.-J. Osten, S. Ganguly, D. Saha, A. Laha (2021): Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 K,  IEEE Transactions on Electron Devices 68 (2021) 2653
  DOI: 10.1109/TED.2021.3070838
• A. Joseph, G. Lilienkamp, T. F. Wietler, H. J. Osten (2020): Ion-Implanted Epitaxially Grown Gd2O3 on Silicon with Improved Electrical Properties,  Journal of Electronic Materials 49 (2020) 6270
  DOI: 10.1007/s11664-020-08392-4
• H. Genath, J. Schmidt, H. J. Osten (2020): Analysis of thin germanium-rich SiGe layers on Si(111) substrates grown by carbon-mediated epitaxy,  Journal of Crystal Growth 535 (2020) 125569
  DOI: 10.1016/j.jcrysgro.2020.125569
• Y. Barnscheidt, J. Schmidt, H. J. Osten (2020): Grazing-incidence X-ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system,  Journal of Applied Crystallography 53 (2020) 1212
  DOI: 10.1107/S1600576720009255
• Y. Barnscheidt, M. Franck, H. J. Osten (2020): Paving the way to dislocation reductionin Ge/Si(001) heteroepitaxy using C-based strained layer superlattices,  Journal of Applied Physics 128 (2020) 095703
  DOI: 10.1063/5.0004352
• A. Fissel, A. R. Chaudhuri, J. Krügener, H. J. Osten (2019): Corrigendum to “Influence of (7×7)–“1×1” phase transition on step-free area formation inmolecular beam epitaxial growth of Si on Si(111)”,  Journal of Crystal Growth 524 (2019) 125155
  DOI: 10.1016/j.jcrysgro.2019.125155
• G. Wetzel, J. Krügener, R. Peibst, A. Dietrich, B. Nacke, H. J. Osten (2019): Simulation of solar cell performance based on in the field measured ambience parameters,  AIP Conference Proceedings 2147 (2019) 020020
  DOI: 10.1063/1.5123825
• L. M. Montañez, I. Strauß, J. Caro, H. J. Osten (2019): Impact of border traps in ultrathin metal-organic framework Cu3(BTC)2 based capacitors,  Microporous and Mesoporous Materials 277 (2019) 136
  DOI: 10.1016/j.micromeso.2018.10.029
• P. Gribisch, J. Schmidt, H.-J. Osten, A. Fissel (2019): Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001),  Acta Crystallographica Section B75 (2019) 59
  DOI: 10.1107/S2052520618017869
• R. S. Pokharia, K. R. Khiangte, J. S. Rathore, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra (2019): Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on- Si(111), grown by molecular beam epitaxy,  Proc. SPIE 10914, Optical Components and Materials XVI, 1091417
  DOI: 10.1117/12.2509720
• R. Sarkar, S. Bhunia, D. Nag, B. C. Barik, K. Das Gupta, D. Saha, S. Ganguly, A. Laha, J. Lemettinen, C. Kauppinen, I. Kim, S. Suihkonen, P. Gribisch, H.-J. Osten (2019): Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application,  Applied Physics Letter 115 (2019) 063502
  DOI: 10.1063/1.5109861
• J. Schmidt, D. Tetzlaff, T.F. Wietler, H. J. Osten (2018): Carbon-mediated epitaxy of SiGe virtual substrates on Si(001),  Semiconductor Science and Technology 33 (2018) 114002
  DOI: 10.1088/1361-6641/aadffc
• K. R. Khiangte, J. S. Rathore, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra (2018): Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy,  Journal of Physics D: Applied Physics 51 (2018) 32LT01
  DOI: 10.1088/1361-6463/aad176
• K. R. Khiangte, J. S. Rathore, S. Das, R. S. Pokharia, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra (2018): Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures,  Journal of Applied Physics 124 (2018) 065704
  DOI: 10.1063/1.5020026
• L. M. Montanez, K. Müller, L. Heinke, H. J. Osten (2018): Integration of thin film of metal-organic frameworks in metal-insulator-semiconductor capacitor structures,  Microporous and Mesoporous Materials 265 (2018) 185
  DOI: 10.1016/j.micromeso.2018.02.018
• L. Montañez, J. A. Tofflinger, R. Grieseler, P. Fischer, A. Ben-Or, J. A. Guerra, R. Weingartner. H. J. Osten, A. Kribus (2018): Structural, optical, and interface properties of sputtered AlN thin films under different hydrogen dilution conditions,  materials today: Proceedings 5 (2018) 14765
  DOI: 10.1016/j.matpr.2018.03.066
• Y. Barnscheidt, J. Schmidt, G. Wetzel, D. Tetzlaff, T.F. Wietler, H.J. Osten (2018): Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy,  Semiconductor Science and Technology 33 (2018) 104006
  DOI: 10.1088/1361-6641/aade69
• A. R. Chaudhuri, A. Fissel, H. J. Osten (2017): Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation,  Journal of Materials Research 32 (2017) 699
  DOI: 10.1557/jmr.2017.22
• J. Krügener, F. Haase, M. Rienäcker, R. Brendel, R. Peibst, H.-J. Osten (2017): Improvement of the SRH Bulk Lifetime upon Formation of n-Type POLO Junctions for 25% Efficient Si Solar Cells,  Solar Energy Materials & Solar Cells 173 (2017) 85
  DOI: 10.1016/j.solmat.2017.05.055
• M. Moellers, C. Margenfeld, T. F. Wietler, H. J. Osten (2017): Growth of epitaxially stabilized, non-cubic Gd2O3 on silicon(111) substrates,  Journal of Crystal Growth 480 (2017) 141
  DOI: 10.1016/j.jcrysgro.2017.10.019
• A. Joseph, D. Tetzlaff, J. Schmidt, R. Böttger, T. F. Wietler, H. J. Osten (2016): Formation and properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon,  Journal of Applied Physics 120 (2016) 144103
  DOI: 10.1063/1.4964431
• A. K. Katiyar, A. Grimm, R. Bar, J. Schmidt, T. F. Wietler, H. J. Osten and S. K. Ray (2016): Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films,  Nanotechnology 27 (2016) 435204
  DOI: 10.1088/0957-4484/27/43/435204
• F. Kiefer, J. Krügener, F. Heinemeyer, H.J. Osten, R. Brendel, R. Peibst (2016): Structural investigation of printed Ag/Al contacts on silicon and numerical modeling of their contact recombination,  IEEE Journal of Photovoltaics 6 (2016) 1175
  DOI: 10.1109/JPHOTOV.2016.2591318
• F. Kiefer, J. Krügener, F. Heinemeyer, M. Jestremski, H. J. Osten, R. Brendel, R. Peibst (2016): Bifacial, Fully Screen-Printed n-PERT Solar Cells With BF2 and B Implanted Emitters,  Solar Energy Materials & Solar Cells 157 (2016) 326
  DOI: 10.1016/j.solmat.2016.05.028
• H. J. Osten (2016): Epitaxial Oxides on Silicon for CMOS and Beyond,  ECS Transactions 75 (2016) 109
  DOI: 11.1149/07513.0109ecst
• K. Ghosh, S. Das, A. Fissel, H.J. Osten, A. Laha (2016): Long-Term Stability of Epitaxial (Nd₁₋ₓGdₓ)₂O₃ Thin Films Grown on Si(001) for Future CMOS Devices,  IEEE Transactions on Electron Devices 63 (2016) 2852
  DOI: 10.1109/TED.2016.2566681
• P. Shekhter, D. Schwendt, Y. Amouyal, T. F. Wietler, H. J. Osten, M. Eizenberg (2016): Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3,  Journal of Applied Physics 120 (2016) 014101
  DOI: 10.1063/1.4958301
• A. Fissel, A. R. Chaudhuri, J. Krügener, H.-J. Osten (2015): Influence of "1x1"- (7x7) phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si(111),  Journal of Crystal Growth 425 (2015) 154
  DOI: 10.1016/j.jcrysgro.2015.02.041
• A. Fissel, A. R. Chaudhuri, J. Krügener, P. Gribisch, H.-J. Osten (2015): Impact of surface phase coexistence on the development of step-free areas on Si(111),  Frontiers of Materials Science 9 (2015) 141
  DOI: 10.1007/s11706-015-0282-z
• A. R. Chaudhuri, A. Fissel, and H.-J. Osten (2015): Erratum:“Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si (100)”[Appl. Phys. Lett. 104 (2014) 012906],  Applied Physics Letters 106 (2015) 149903
  DOI: 10.1063/1.4917251
• A. R. Chaudhuri, H. J. Osten, and A. Fissel (2015): Impact of boron on the step-free area formation on Si(111) mesa structures,  Journal of Applied Physics 118 (2015) 245308
  DOI: 10.1063/1.4939160
• J. Krügener, R. Peibst, E. Bugiel, D. Tetzlaff, F. Kiefer, M. Jestremski, R. Brendel, and H. J. Osten (2015): Ion implantation of boric molecules for silicon solar cells,  Solar Energy Materials & Solar Cells 142 (2015) 12
  DOI: 10.1016/j.solmat.2015.05.024
• J. Krügener, R. Peibst, F. A. Wolf, E. Bugiel, T. Ohrdes, F. Kiefer, C. Schöllhorn, A. Grohe, R. Brendel, H.-J. Osten (2015): Electrical and Structural Analysis of Crystal Defects after High-Temperature Rapid Thermal Annealing of highly Boron Ion-Implanted Emitters,  IEEE Journal of Photovoltaics 5 (2015) 166
  DOI: 10.1109/JPHOTOV.2014.2365468
• A. R. Chaudhuri, A. Fissel, H.-J. Osten (2014): Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100),  Applied Physics Letters 104 (2014) 012906
  DOI: 10.1063/1.4861470
• A. R. Chauhuri, A. Fissel, H.-J. Osten (2014): Enhanced Dielectric Properties of Nitrogen Doped Epitaxial Gd2O3 Thin Films on Si,  physica status solidi C 11 (2014) 1412
  DOI: 10.1002/pssc.201300596
• F. Kiefer, R. Peibst, T. Ohrdes, T. Dullweber, J. Krügener, H.-J. Osten, C. Schöllhorn, A. Grohe, R. Brendel (2014): Influence of the boron emitter profile on VOC and JSC losses in fully ion implanted n-type PERT solar cells,  physica status solidi A 212 (2014) 291
  DOI: 10.1002/pssa.201431118
• H.-J. Osten, A. Fissel (2014): Kristallstrukturengineering,  Unimagazin der Leibniz Universität Hannover 01/02 (2014) 50
• H.-J. Osten, D. Schwendt, A. R. Chaudhuri, A. Fissel, P. Shekhter, M. Eizenberg (2014): Tuning Dielectric Properties of Epitaxial Lanthanide Oxides on Silicon,  ECS Transactions 61 (2014) 3
  DOI: 10.1149/06102.0003ecst
• J. Krügener, E. Bugiel, R. Peibst, F. Kiefer, T. Ohrdes, R. Brendel, H.-J. Osten (2014): Structural analysis of textured silicon surfaces after ion implantation under tilted angle,  Semiconductor Science and Technology 29 (2014) 095004
  DOI: 10.1088/0268-1242/29/9/095004
• P. Shekhter, A. R. Chaudhuri, A. Laha, S. Yehezkel, A. Shriki, H.-J. Osten, M. Eizenberg (2014): The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric,  Applied Physics Letters 105 (2014) 262901
  DOI: 10.1063/1.4905356
• A. Laha, A. Fissel, H.-J. Osten (2013): Effective control on flat band voltage of epitaxial lanthanide oxide based MOS capacitors by interfacial carbon,  Applied Physics Letters 102 (2013) 202902
  DOI: 10.1063/1.4807588
• A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Investigation of band offsets and dc leakage properties of nitrogen doped epitaxial Gd2O3 thin films on Si,  Journal of Applied Physics 113 (2013) 184108
  DOI: 10.1063/1.4804245
• A. R. Chaudhuri, A. Fissel, V. R. Archakam, H.-J. Osten (2013): Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping,  Applied Physics Letters 102 (2013) 022904
  DOI: 10.1063/1.4775688
• D. Tetzlaff, T. F. Wietler, E. Bugiel, H.-J. Osten (2013): Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy,  Journal of Crystal Growth 378 (2013) 254
  DOI: 10.1016/j.jcrysgro.2012.12.087
• H.-J. Osten (2013): Crystalline oxides on silicon,  High Permittivity Gate Dielectric Materials, Ed. Samares Kar, Springers Series in Advanced Microelectronics 43 (2013) 395
  ISBN: 978-3-642-36535-5
• J. Krügener, H.-J. Osten, A. Fissel (2013): Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7x7)-“1x1” surface phase transistion,  Surface Science 618 (2013) 27
  DOI: 10.1016/j.susc.2013.08.017
• K. Ghosh, S. Das, A. Fissel, H.-J. Osten, A. Laha (2013): Epitaxial Gd2O3 on strained Si1-xGex virtual substrate for next generation complementary metal oxide semiconductor device application,  Applied Physics Letters 103 (2013) 153501
  DOI: 10.1063/1.4824422
• K. Xu, A. R. Chaudhuri, H. Parala, D. Schwendt, T. de los Arcos, H.-J. Osten, A. Devi (2013): Atomic layer deposition of Er2O3 thin films from Er tris-guanidinate and water: Process optimization, film analysis and electrical properties,  Journal of Materials Chemistry C 1 (2013) 3939
  DOI: 10.1039/C3TC30401A
• S. Manna, R. Aluguri, A. Katiyar, S. Das, A. Laha, H.-J. Osten, S. K. Ray (2013): MBE grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si (111) substrate for floating gate memory device,  Nanotechnology 24 (2013) 505709
  DOI: 10.1088/0957-4484/24/50/505709
• A. Fissel, J. Krügener, H.-J. Osten (2012): Preparation of large step-free mesas on Si(111) by molecular beam epitaxy,  physica status solidi C 9 (2012) 2050
  DOI: 10.1002/pssc.201200139
• D. Schwendt, H.-J. Osten, P. Shekhter, M. Eizenberg (2012): Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon,  Applied Physics Letters 100 (2012) 232905
  DOI: 10.1063/1.4727893
• D. Tetzlaff , T. F. Wietler, E. Bugiel, H.-J. Osten (2012): Carbon-mediated growth of thin, fully relaxed germanium films on silicon,  Applied Physics Letters 100 (2012) 012108
  DOI: 10.1063/1.3675450
• H.-J. Osten, D. Schwendt (2012): Strain Effects on Dielectric Properties of Thin, Crystalline Rare Earth Oxides on Silicon,  ECS Transactions 50 (2012) 41
  DOI: 10.1149/05004.0041ecst
• K. Xu, R. Ranjith, A. P. Milanov, H. Parala, R. A. Fischer, A. Laha, E. Bugiel, J. Feydt, S. Irsen, T. Toader, C. Bock, D. Rogalla, H.-J. Osten, U. Kunze, A. Devi (2012): Atomic layer deposition of Gd2O3 and Dy2O3: A study on the ALD characteristics, structural and electrical properties,  Chemistry of Materials 24 (2012) 651
  DOI: 10.1021/cm2020862
• A. Fissel, J. Krügener, H.-J. Osten (2011): Towards controlled molecular beam epitaxial growth of artificially layered Si structures,  Journal of Crystal Growth 323 (2011) 144
  DOI: 10.1016/j.jcrysgro.2010.12.001
• A. Laha, A. Bin, P. R. P. Babu, A. Fissel, H.-J. Osten (2011): Enhanced electrical properties of carbon doped epitaxial Gd2O3 thin films on silicon substrates,  ECS Transactions 41 (2011) 101
  DOI: 10.1149/1.3633025
• A. Laha, B. Ai, P. R. P. Babu, A. Fissel, H.-J. Osten (2011): Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties,  Applied Physics Letters 99 (2011) 152902
  DOI: 10.1063/1.3646104
• E. Lipp, Z. Shahar, B. C. Bittel, P. M. Lenahan, D. Schwendt, H.-J. Osten, M. Eizenberg (2011): Trap-assisted conduction in Pt-gated Gd2O3/Si capacitors,  Journal of Applied Physics 109 (2011) 073724
  DOI: 10.1063/1.3573036
• H.-J. Osten (2011): Auf dem Weg zur Nanoelektronik: Neue kristalline Materialien für Elektroniklösungen auf dem altbekannten Silizium,  Unimagazin der Leibniz Universität Hannover 01/02 (2011) 20
• J. Krügener, H.-J. Osten, A. Fissel (2011): Ultraviolet photoelectron spectroscopic study of elemental boron adsorption and surface segregation on Si(111),  Physical Review B 83 (2011) 205303
  DOI: 10.1103/PhysRevB.83.205303
• R. Haug, H.-J. Osten, J. Caro, L. Rissing, F. Schulze-Wischeler (2011): Engineering des Unsichtbaren,  Unimagazin der Leibniz Universität Hannover 01/02 (2011) 4
• Y. Y. Gomeniuk, Y. V. Gomeniuk, A. N. Lazarov, V. S. Lysenko, H.-J. Osten, A. Laha (2011): Interface and bulk properties of high-K gadolinium and neodymium oxides on silicon,  Advanced Materials Research 276 (2011) 167
  DOI: 10.4028/www.scientific.net/AMR.276.167
• A. Fissel, J. Krügener, D. Schwendt, H.J. Osten (2010): Role of boron and (√3x√3)-B surface defects on the growth mode of Si on Si(111),  A photoemission and electron diffraction study, physica status solidi A 207 (2010) 245
  DOI: 10.1002/pssa.200982433
• A. Fissel, R. Dargis, E. Bugiel, D. Schwendt, T. Wietler, J. Krügener, A. Laha, H.-J. Osten (2010): Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy,  Thin Solid Films 518 (2010) 2546
  DOI: 10.1016/j.tsf.2009.09.139
• A. Laha, A. Fissel, H.-J. Osten (2010): Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates,  Applied Physics Letters 96 (2010) 072903
  DOI: 10.1063/1.3318260
• A. Milanov, K. Xu, A. Laha, E. Bugiel, R. Ranjith, D. Schwendt, H.-J. Osten, H. Parala, R. Fischer, A. Devi (2010): Crystalline Gd2O3 thin films with high quality interface on Si(100) by low temperature H2O assisted atomic layer deposition process,  Journal of the American Chemical Society 132 (2010) 36
  DOI: 10.1021/ja909102j
• H.-J. Osten, A. Laha, A. Fissel (2010): Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic Devices,  Proceedings of the 4th International Conference on Quantum, Nano and Micro Technologies (2010) 38
  DOI: 10.1109/ICQNM.2010.14
• J. X. Wang, T. Liu, Z. Wang, E. Bugiel, A. Laha, T. Watahiki, R. Shayduk, W. Braun, A. Fissel, H.-J. Osten (2010): Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si,  Materials Letters 64 (2010) 866
  DOI: 10.1016/j.matlet.2010.01.045
• R. Dargis, A. Fissel, D. Schwendt, J. Krügener, T. Wietler, A. Laha, E. Bugiel, H.-J. Osten (2010): Epitaxial growth and thermal stability of silicon layers on crystalline rare-earth metal oxides,  Vacuum 85 (2010) 523
  DOI: 10.1016/j.vacuum.2010.01.026
• R. Ranjith, A. Laha, E. Bugiel, H.-J. Osten, K. Xu, A. P. Milanov, A. Devi (2010): Downscaling of defect-passivated Gd2O3 thin films on p-Si(001) wafers grown by H2O-assisted atomic layer deposition,  Semiconductor Science and Technology 25 (2010) 105001
  DOI: 10.1088/0268-1242/25/10/105001
• A. Fissel, A. Laha, E. Bugiel, R. Dargis, A. Ali, H.J. Osten (2009): Tailoring of Si nanostructures embedded into epitaxial oxides for various applications,  World Journal of Engineering 6 (2009) 245
• A. Fissel, J. Krügener, H.-J. Osten (2009): Influence of boron on the initial stages of Si molecular beam epitaxy on Si(111) studied by reflection high-energy electron diffraction,  Surface Science 603 (2009) 477
  DOI: 10.1016/j.susc.2008.12.004
• A. Laha, E. Bugiel, M. Jestremski, R. Ranjith, A. Fissel, H.-J. Osten (2009): Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide,  Nanotechnology 20 (2009) 475604
  DOI: 10.1088/0957-4484/20/47/475604
• A. Laha, E. Bugiel, R. Dargis, D. Schwendt, M. Badylevich, V.V. Afanas’ev, A. Stesmans, A. Fissel, H.-J. Osten (2009): Integration of low dimensional crystalline Si into functional epitaxial oxides,  Microelectronics Journal 40 (2009) 633
  DOI: 10.1016/j.mejo.2008.06.064
• A. Nazarov, V. Lysenko, Y. Y. Gomeniuk, Y. V. Gomeniuk, H.-J. Osten, A. Laha (2009): Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon,  ECS Meeting Abstracts 902 (2009) 2139
  DOI: 10.1149/1.3206634
• E. Lipp, H.-J. Osten, M. Eizenberg (2009): The thermal stability of Pt/ epitaxial Gd2O3 / Si stacks and its dependence on heat-treatment ambient,  Journal of Applied Physics 106 (2009) 113505
  DOI: 10.1063/1.3264674
• H.-J. Osten, A. Fissel, A. Laha (2009): Introducing Crystalline Rare-Earth Oxides into Si-based Electronics,  Proceedings of the XVth International Workshop on the Physics of Semiconductor Devices (IWPSD-2009) 107
• H.-J. Osten, A. Laha, A. Fissel (2009): Epitaxial Lanthanide Oxide based Gate Dielectrics,  MRS Proceedings 1155: CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications (2009) 97
  DOI: 10.1557/PROC-1155-C01-01
• J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, R. Shayduka, W. Braun, T. M. Liu, H.-J. Osten (2009): Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(111) substrates: a diffraction study,  Semiconductor Science and Technology 24 (2009) 045021
  DOI: 10.1088/0268-1242/24/4/045021
• J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, T. Liu, H.-J. Osten (2009): Structural Study of Epitaxially Grown Nano-thick Nd2O3/Si(111) Heterostructure,  Proceedings of the 4th IEEE Int. Conf. on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS) (2009) 431
  DOI: 10.1109/NEMS.2009.5068613
• M. C. Lemme, H. D. B. Gottlob, T. J. Echtermeyer, H. Kurz, R. Endres, U. Schwalke, M. Czernohorsky, D. Tetzlaff, H.-J. Osten (2009): Complementary metal oxide semiconductor integration of epitaxial Gd2O3,  Journal of Vacuum Science & Technology B 27 (2009) 258
  DOI: 10.1116/1.3054350
• R. Dargis, A. Fissel, E. Bugiel, D. Schwendt, T. Wietler, A. Laha, H.-J. Osten (2009): Epitaxial Growth and Properties of Silicon on Crystalline Rare-Earth-Metal Oxide for SOI Applications,  Material Science (MEDŽIAGOTYRA) 15 (2009) 11
• R. Dargis, A. Fissel, E. Bugiel, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2009): Development of multi-step procedure for epitaxial growth of crystalline silicon on rare-earth-metal oxide for SOI-applications,  e-Journal of Surface Science and Nanotechnology 7 (2009) 405
  DOI: 10.1380/ejssnt.2009.405
• T. F. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, H.-J. Osten (2009): Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(001) substrates,  Solid-State Electronics 53 (2009) 833
  DOI: 10.1016/j.sse.2009.04.027
• V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel (2009): Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3,  Applied Physics Letters 95 (2209) 102107
  DOI: 10.1063/1.3204019
• A. Fissel, D. Kühne, E. Bugiel, A. Laha, M. Czernohorsky, R. Dargis, H.-J. Osten (2008): Silicon in functional epitaxial oxides: A new group of nanostructures,  Microelectronics Journal 39 (2008) 512
  DOI: 10.1016/j.mejo.2007.11.007
• A. Fissel, J. Krügener, E. Bugiel, T. Block, H.-J. Osten (2008): Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes,  Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) (2008) 148
  DOI: 10.1109/COMMAD.2008.4802113
• A. Laha, A. Fissel, E. Bugiel, M. Badylevich, V. Afanasiev, H.-J. Osten (2008): Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application,  Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) (2008) 148
  DOI: 10.1109/COMMAD.2008.4802118
• A. Laha, D. Kühne, E. Bugiel, A. Fissel, H.-J. Osten (2008): Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applications,  Semiconductor Science and Technology 23 (2008) 085015
  DOI: 10.1088/0268-1242/23/8/085015
• A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2008): Si-nanoclusters embedded into epitaxial rare earth oxides: potential candidate for non-volatile memory applications,  Microelectronic Engineering 85 (2008) 2350
  DOI: 10.1016/j.mee.2008.09.030
• A. Laha, E. Bugiel, H.-J. Osten, A. Fissel (2008): Epitaxial Rare Earth Oxide Thin Film: Potential Candidate for Future Microelectronic Devices, Rare Earths: Research and Applications,  Editor: Keith N. Delfrey, Nova Science Publishers (2008) 301
  ISBN: 978-1-60456-218-7
• A. Laha, E. Bugiel, J. X. Wang, Q. Q. Sun, A. Fissel, H.-J. Osten (2008): Effect of domain boundaries on the electrical properties of crystalline Gd2O3 thin film,  Applied Physics Letters 93 (2008) 182907
  DOI: 10.1063/1.3009206
• B. Raissi, J. Piscator, O. Engström, S. Hall, O. Buiu, M. C. Lemme, H. D. B. Gottlob, P. K. Hurley, K. Cherkaoui, H.-J. Osten (2008): High-K-oxide/silicon interfaces characterized by capacitance frequency spectroscopy,  Solid-State Electronics 52 (2008) 1274
  DOI: 10.1016/j.sse.2008.04.005
• E. Lipp, M. Eizenberg, M. Czernohorsky, H.-J. Osten (2008): Effect of oxide structure on the Fermi-level pinning at metal/Gd2O3 interfaces,  Applied Physics Letters 93 (2008) 193513
  DOI: 10.1063/1.3028071
• H.-J. Osten, A. Laha, M. Czernohorsky, E. Bugiel, R. Dargis, A. Fissel (2008): Introducing crystalline rare-earth oxides into Si technologies,  physica status solidi A 205 (2008) 695
  DOI: 10.1002/pssa.200723509
• M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel (2008): Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals,  Microelectronic Engineering 85 (2008) 2382
  DOI: 10.1016/j.mee.2008.09.002
• M. Czernohorsky, D. Tetzlaff, E. Bugiel, R. Dargis, H.-J. Osten, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, H. Kurz (2008): Stability of Crystalline Gd2O3 Thin Films on Silicon during Rapid Thermal Annealing,  Semiconductor Science and Technology 23 (2208) 035010
  DOI: 10.1088/0268-1242/23/3/035010
• Q.-Q. Sun, A. Laha, H.-J. Osten, S.-J. Ding, D. W. Zhang, A. Fissel (2008): Electrical Characterization of Ultrathin Single Crystalline Gd2O3/Si(100) with Pt Top Electrode,  Proceedings of the 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008) 1276
  DOI: 10.1109/ICSICT.2008.4734784
• Q.-Q. Sun, A. Laha, S.-J. Ding, D. W. Zhang, H.-J. Osten, A. Fissel (2008): Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method,  Applied Physics Letters 93 (2008) 083509
  DOI: 10.1063/1.2976325
• Q.-Q. Sun, S.-J. Ding, D. W. Zhang, A. Laha, H.-J. Osten, A. Fissel (2008): Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100),  Applied Physics Letters 92 (2008) 152908
  DOI: 10.1063/1.2912523
• V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel, W. Tian, L. F. Edge, D. G. Schlom (2008): Band offsets between Si and epitaxial rare earth sesquioxides (RE2O3, RE=La, Nd, Gd, Lu): Effect of 4f-shell occupancy,  Applied Physics Letters 93 (2008) 192105
  DOI: 10.1063/1.3003872
• A. Fissel, M. Czernohorsky, R. Dargis, H.-J. Osten (2007): Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application,  Material Science Forum 556-557 (2007) 655
  DOI: 10.4028/www.scientific.net/MSF.556-557.655
• A. Laha, A. Fissel, E. Bugiel, H.-J. Osten (2007): Epitaxial multi-component rare earth oxide for high-K application,  Thin Solid Films 515 (2007) 6512
  DOI: 10.1016/j.tsf.2006.11.070
• A. Laha, A. Fissel, H.-J. Osten (2007): Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application,  Applied Physics Letters 90 (2007) 113508
  DOI: 10.1063/1.2713142
• A. Laha, A. Fissel, H.-J. Osten (2007): Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: a route towards tuning the electrical properties,  Microelectronic Engineering 84 (2007) 2282
  DOI: 10.1016/j.mee.2007.04.051
• A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H.-J. Osten (2007): Charge trapping in ultrathin Gd2O3 high-K dielectrics,  Microelectronic Engineering 84 (2007) 1968
  DOI: 10.1016/j.mee.2007.04.136
• E. Bugiel, A. Fissel, M. Czernohorsky, A. Laha, H.-J. Osten (2007): Integration of Functional Epitaxial Oxides into Silicon: A TEM Investigation,  Microscopy and Microanalysis 13 (2007) 304
  DOI: 10.1017/S1431927607081524
• E. Bugiel, M. Lewerenz, H.-J. Osten (2007): Fabrication of well-defined individual dislocations in SiGe as a novel one-dimensional system,  Physica E: Low-dimensional Systems and Nanostructures 37 (2007) 250
  DOI: 10.1016/j.physe.2006.07.004
• E. Lipp, M. Eizenberg, M. Czernohorsky, H.-J. Osten (2007): Thermal Stability of Pt/ Epitaxial Gd2O3/ Si Stacks,  Materials Research Society Symposium Proceedings 996 (2007) H03-08
• H.-J. Osten (2007): Kristalline Gate-Isolatoren für zukünftige MOS-Transistoren,  Technologie-Informationen 02 (2007)
• H.-J. Osten, A. Laha, M. Czernohorsky, R. Dargis, E. Bugiel, A. Fissel (2007): Crystalline Rare-Earth Oxides as High-k Materials for Future CMOS Technologies,  ECS Transactions 11 (2007) 287
  DOI: 10.1149/1.2779568
• H.-J. Osten, D. Kühne, A. Laha, M. Czernohorsky, E. Bugiel, A. Fissel (2007): Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures,  Journal of Vacuum Science & Technology B 25 (2007) 1039
  DOI: 10.1116/1.2720858
• H.-J. Osten, D. Kühne, E. Bugiel, A. Fissel (2007): Fabrication of single crystalline insulator/Si/insulator double barrier nanostructures using cooperative vapor-solid-phase epitaxy,  Physica E: Low-dimensional Systems and Nanostructures 38 (2007) 6
  DOI: 10.1016/j.physe.2006.12.012
• H.-J. Osten, E. Bugiel, M. Czernohorsky, Z. Elassar, O. Kirfel, A. Fissel (2007): Molecular Beam Epitaxy of Rare-Earth Oxides,  In Topics in Applied Physics Volume 106: Rare Earth Oxide Thin Films, Editors M. Fanciulli & G. Scarel, Springer-Verlag Berlin/Heidelberg (2007) 101
  DOI: 10.1007/11499893_7
  ISBN: 978-3-540-35796-4
• H.-J. Osten, M. Czernohorsky, R. Dargis, A. Laha, D. Kühne, E. Bugiel, A. Fissel (2007): Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures,  Microelectronic Engineering 84 (2007) 2222
  DOI: 10.1016/j.mee.2007.04.092
• M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel (2007): Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations,  Applied Physics Letters 90 (2007) 252101
  DOI: 10.1063/1.2746419
• S. Zollner, J. P. Liu, P. Zaumseil, H.-J. Osten, A. A. Demkov (2007): Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si1-yCy alloys on Si(001),  Semiconductor Science and Technology 22 (2007) S13
  DOI: 10.1088/0268-1242/22/1/S04
• A. Fissel, D. Kuehne, E. Bugiel, H.-J. Osten (2006): Novel Approach for Fabrication of Single-Crystalline Insulator/Si/Insulator Nanostructure,  MRS Proceedings 928: Current and Future Trends of Functional Oxide Films, Editors: D. Kumar, V. Craciun, M. Alexe, K. K. Singh (2006) 0928-GG03-04
  DOI: 10.1557/PROC-0928-GG03-04
• A. Fissel, D. Kühne, E. Bugiel, H.-J. Osten (2006): Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single crystalline insulator/Si/insulator nanostructures,  Applied Physics Letters 88 (2006) 153105
  DOI: 10.1063/1.2192979
• A. Fissel, D. Kühne, E. Bugiel, H.-J. Osten (2006): Fabrication of single-crystalline insulator/Si/insulator nanostructures,  Journal of Vacuum Science & Technology B 24 (2006) 2041
  DOI: 10.1116/1.2213266
• A. Fissel, E. Bugiel, C. L. Wang, H.-J. Osten (2006): Formation of twinning-superlattice regions by artificial stacking of Si layers,  Journal of Crystal Growth 290 (2006) 392
  DOI: 10.1016/j.jcrysgro.2006.02.009
• A. Fissel, E. Bugiel, C. R. Wang, H.-J. Osten (2006): Formation of Si twinning-superlattice; First steps towards Si-polytype growth,  Materials Science and Engineering: B 134 (2006) 138
  DOI: 10.1016/j.mseb.2006.06.046
• A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide,  Journal of Vacuum Science & Technology B 24 (2006) 2115
  DOI: 10.1116/1.2214702
• A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application,  Superlattices and Microstructures 40 (2006) 551
  DOI: 10.1016/j.spmi.2006.07.002
• A. Fissel, Z. Elassar, O. Kirfel, E. Bugiel, M. Czernohorsky, H.-J. Osten (2006): Interface Formation during Molecular beam Epitaxial Growth of Neodymium Oxide on Silicon,  Journal of Applied Physics 99 (2006) 074105
  DOI: 10.1063/1.2188051
• A. Laha, A. Fissel, E. Bugiel, H.-J. Osten (2006): Crystalline ternary rare earth oxides with capacitance equivalent thickness below 1 nm for high-K application,  Applied Physics Letters 88 (2006) 172107
  DOI: 10.1063/1.2198518
• A. Laha, E. Bugiel, H.J. Osten, A. Fissel (2006): Erratum: Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application [Applied Physics Letters 88, 172107 (2006)],  Applied Physics Letters 89 (2006) 139901
  DOI: 10.1063/1.2354313
• A. Laha, H.-J. Osten, A. Fissel (2006): Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application,  Applied Physics Letters 89 (2006) 143514
  DOI: 10.1063/1.2360209
• E. Bugiel, H.-J. Osten, A. Fissel, O. Kirfel, M. Czernohorsky (2006): TEM Investigations of Epitaxial High-k Dielectrics on Silicon,  Springer Proceedings in Physics 107: Microscopy of Semiconducting Materials, Editors A. G. Cullis & J. L. Hutchinson, Springer-Verlag Berlin Heidelberg (2006) 343
  DOI: 10.1007/3-540-31915-8_73
  ISBN: 978-3-540-31914-6
• H. D. B. Gottlob, T. Echtermeyer, M. Schmidt, T. Mollenhauer, J. K. Efavi, T. Wahlbrink, M. C. Lemme, M. Czernohorsky, E. Bugiel, A. Fissel, H.-J. Osten, H. Kurz (2006): 0.86 nm CET Gate Stacks with Epitaxial Gd2O3 High-K Dielectrics and FUSI NiSi Metal Electrodes,  IEEE Electron Device Letters 27 (2006) 814
  DOI: 10.1109/LED.2006.882581
• H. D. B. Gottlob, T. Echtermeyer, T. Mollenhauer, J. Efavi, M. Schmidt, T. Wahlbrink, M. C. Lemme, H. Kurz, M. Czernohorsky, E. Bugiel, H.-J. Osten, A. Fissel (2006): CMOS Integration of Epitaxial Gd2O3 High-K Gate Dielectrics,  Solid State Electronics 50 (2006) 979
  DOI: 10.1016/j.sse.2006.04.018
• H. D. B. Gottlob, T. Echtermeyer, T. Mollenhauer, M. Schmidt, J. K. Efavi, T. Wahlbrink, M. C. Lemme, H. Kurz, R. Endres, Y. Stefanov, U. Schwalke, M. Czernohorsky, E. Bugiel, A. Fissel, H.-J. Osten (2006): Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics,  Proceedings of the 36th European Solid-State Device Research Conference (2006) 150
  DOI: 10.1109/ESSDER.2006.307660
• H.-J. Osten (2006): Auf dem Weg zur Nanoelektronik,  Tele Kommunikation Aktuell 07-12 (2006)
• H.-J. Osten, A. Fissel, O. Kirfel, Z. Elassar, E. Bugiel, M. Czernohorsky (2006): Interface formation during epitaxial growth of binary metal oxides on silicon,  Nano-Electronic Semiconductor Devices: Defects in High-k Gate Dielectric Stacks, Editor E. Gusev, Springer Netherlands (2006) 361
  DOI: 10.1007/1-4020-4367-8_29
  ISSN: 978-1-4020-4365-9
• H.-J. Osten, M. Czernohorsky, E. Bugiel, D. Kuehne, A. Fissel (2006): Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon,  MRS Proceedings 917: Gate Stack Scaling - Materials Selection, Role of Interfaces, and Reliability Implications, Editors: R. Jammy, A. Shanware, V. Misra, Y. Tsunashima, S. DeGendt (2006) 0917-E10-04
  DOI: 10.1557/PROC-0917-E10-04
• M. Czernohorsky, A. Fissel, E. Bugiel, O.Kirfel, H.-J. Osten (2006): Impact of Oxygen Supply during Growth on the Electrical Properties of Crystalline Gd2O3 Thin Films on Si(001),  Applied Physics Letters 88 (2006) 152905
  DOI: 10.1063/1.2194227
• S. Zollner, V. Vartanian, J. P. Liu, P. Zaumseil, H.-J. Osten, A. A. Demkov, B.-Y. Nguyen (2006): Optical properties, elasto-optical effects, and critical-point parameters of biaxially stressed Si1-yCy alloys on Si (001),  Proceedings of the 3rd IEEE International SiGe Technology and Device Meeting (ISTDM) (2006) 1
  DOI: 10.1109/ISTDM.2006.246604
• A. Fissel, C. Wang, E. Bugiel, H.J. Osten (2005): Epitaxial growth of non-cubic silicon,  Microelectronics Journal 36 (2005) 506
  DOI: 10.1016/j.mejo.2005.02.064
• E. Bugiel, H. J. Osten, A. Fissel, O. Kirfel, M. Czernohorsky (2005): TEM investigations of epitaxial high-k dielectrics on silicon,  Springer Proceedings in Physics 107 (2005) 343
  DOI: 10.1007/3-540-31915-8_73
• H.-J. Osten (2005): Carbon-doping of SiGe,  Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy, Editor J. D. Cressler, CRC Press (2005)
  ISBN: 978-1-4200-2658-0
• H.J. Osten, E. Bugiel, O. Kirfel, M. Czernohorsky, A. Fissel (2005): MBE growth and properties of epitaxial metal oxides for high-k dielectrics,  Journal of Crystal Growth 278 (2005) 18
  DOI: 10.1016/j.jcrysgro.2004.12.051
• H.J. Osten, J. Dabrowski, H.-J. Müssig, A. Fissel, V. Zavodinsky (2004): High-K dielectrics: the example of Pr2O3, Challenges in Process Simulation,  (ed.J. Dabrowski and E.R. Weber, Springer Verlag 2004), pp. 259-293
  DOI: 10.1007/978-3-662-09432-7_7
• A. Fissel, H.J. Osten, E. Bugiel (2003): Towards understanding epitaxial growth of alternative high-k dielectrics on Si(001): Application to praseodymium oxide,  Journal of Vacuum Science and Technology B 21 (2003) 1765
  DOI: 10.1116/1.1589516
• H.J. Osten, E. Bugiel, A. Fissel (2003): Epitaxial Praseodymium Oxide: A New High-K Dielectric,  Material Research Society Symposium Proceeding 744 (2003) 15
  DOI: 10.1557/PROC-744-M1.5
• H.J. Osten, E. Bugiel, A. Fissel (2003): Epitaxial praseodymium oxide: a new high-k dielectric,  Solid-State Electronics 47 (2003) 2165
  DOI: 10.1016/S0038-1101(03)00190-4
• A. Fissel, J. Dabrowski, H.J. Osten (2002): Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001),  Journal of Applied Physics 91 (2002) 8986
  DOI: 10.1063/1.1471943