Leibniz Universität Hannover Faculty Faculty of Electrical Engineering and Computer Science
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Institute of Electronic Materials and Devices
 
Institute of Electronic Materials and Devices Research Research Projects
Nanowire Field Effect Transistor with epitaxial Gd2O3 as wraparound gate oxide

Nanowire Field Effect Transistor with epitaxial Gd2O3 as wraparound gate oxide

Led by:  Prof. H. Jörg Osten
Year:  2020
Funding:  DAAD
Duration:  2020 - 2023
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Last Change: 14.09.23 Print

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