Vorträge

Konferenzbeitrag

• A. Grimm, J. Ruhkopf, E. Bugiel, T. Wietler (2018): Epitaxial Gd2O3 as surface domain indicator: Towards single domain Ge films grown on Si by surfactant-mediated epitaxy,  German MBE Workshop 2018, Freiburg, Germany, 11.-12.10.2018
• J. Schmidt, D. Tetzlaff, T. F. Wietler, H. J. Osten (2018): Carbon-mediated epitaxy of SiGe virtual substrates on Si(001),  1st Joint ISTDM / ICSI 2018 Conference, Potsdam, Germany, 27.-31.05.2018
• R. Peibst, N. Folchert, F. Haase, C. Klamt, Y. Larionova, J. Krügener, A. Merkle, B. Min, M. Rienäcker, U. Römer, S. Schäfer, D. Tetzlaff, T. Wietler, R. Brendel (invited) (2018): In-depth Study of poly-Si/Oxide/c-Si Junctions and p+ poly-Si/n+ Poly-Si Tunneling Junctions for Applications in Si Single Junction and Si-Based Tandem Cells,  MRS Fall Metting 2018, Boston, USA, 25.-30.11.2018
• T. Wietler, D. Tetzlaff, A. Feldhoff, Y. Larionova, M. Turcu, S. Reiter, B. Min, R. Brendel, R. Peibst (2018): Formation of a Resistive SiOx Layer at the Interface of Poly-Si to Aluminum-Doped Zinc Oxide,  8th International Conference on Silicon Photovoltaics (8th SiliconPV), Lausanne, Switzerland, 19.-21.03.2018
• Y. Barnscheidt, J. Schmidt, G. Wetzel, D. Tetzlaff, T. Wietler, H. J. Osten (2018): Highly Boron Doped Germanium grown by Carbon-Mediated-Epitaxy,  1st Joint ISTDM / ICSI 2018 Conference, Potsdam, Germany, 27.-31.05.2018
• Y. Barnscheidt, J. Schmidt, G. Wetzel, D. Tetzlaff, T.F. Wietler, H. J. Osten (2018): Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy,  Summer school on defects in semiconductors, Gent, Belgium, 10.-14.09.2018
• Y. Barnscheidt, J. Schmidt, G. Wetzel, D. Tetzlaff, T.F. Wietler, H. J. Osten (2018): Ultra-high boron-doped Ge grown by carbon-mediated epitaxy,  German MBE Workshop 2018, Freiburg, Germany, 11.-12.10.2018
• D. Tetzlaff, J. Krügener, Y. Larionova, S. Reiter, M. Turcu, F. Haase, R. Brendel, R. Peibst, U. Höhne, J.-D. Kähler, T. F. Wietler (2017): A Simple Method for Pinhole Detection in Carrier Selective POLO-Junctions for High Efficiency Silicon Solar Cells,  7th International Conference on Silicon Photovoltaics (7th SiliconPV), Freiburg, Germany, 03.-05.04.2017
• D. Tetzlaff, J. Krügener, Y. Larionova, S. Reiter, M. Turcu, F. Haase, R. Brendel, R. Peibst, U. Höhne, J.-D. Kähler, T. Wietler (2017): Junction Unchained - Pinhole Detection in Carrier-Selective POLO-Junctions,  LNQE Nanoday 2017, Hannover, Germany, 28.09.2017
• D. Tetzlaff, M. Dzinnik, J. Krügener, Y. Larionova, S. Reiter, M. Turcu, R. Peibst, U. Höhne, J.-D. Kähler, T. F. Wietler (2017): Introducing Pinhole Magnification by Selective Etching: Application to Poly-Si on Ultra-Thin Silicon Oxide Films,  7th International Conference on Silicon Photovoltaics (7th SiliconPV), Freiburg, Germany, 03.-05.04.2017
• D. Tetzlaff, M. Dzinnik, J. Krügener, Y. Larionova, S. Reiter, M. Turcu, R. Peibst, U. Höhne, J.-d. Kähler, T. Wietler (2017): Tetramethylammoniumhydroxide - Pinhole Magnification by Selective Etching,  LNQE Nanoday 2017, Hannover, Germany, 28.09.2017
• R. Peibst, S. Reiter, Y. Larionova, R.-R. Koch, R. Brendel, D. Tetzlaff, J. Krügener, T. Wietler, U. Höhne, J.-D. Kähler, H. Mehlich (2017): Building blocks for industrial, screen-printed two sides-contacted POLO cells with highly transparent ZnO:Al layers,  33rd European PV Solar Energy Conference and Exhibition (33rd EU PVSEC), Amsterdam, The Netherlands, 25.-29.09.2017
• A. Joseph, D. Tetzlaff, J. Schmidt, R. Böttger, T.F. Wietler, H.J. Osten (2016): Properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon,  EMN Meeting on Epitaxy, Budapest, Hungary, 04.-08.09.2016
• A. Joseph, D. Tetzlaff, J. Schmidt, R. Böttger, T.F. Wietler, H.J. Osten (2016): Properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon,  Deutscher MBE-Workshop, Garching, Germany, 13.-14.10.2016
• D. Tetzlaff, J. Krügener, Y. Larionova, S. Reiter, M. Turcu, R. Peibst, U. Höhne, J.-D. Kähler, T. Wietler (2016): Evolution of Oxide Disruptions: The (W)hole Story About Passivating Contacts,  43rd Photovoltaic Specialists Conference (43rd IEEE PVSC), Portland, OR, USA, 05.-10.06.2016
  DOI: 10.1109/PVSC.2016.7749582
• D. Tetzlaff, J. Krügener, Y. Larionova, S. Reiter, M. Turcu, R. Peibst, U. Höhne, J.-D. Kähler, T. Wietler (2016): Finding Pinholes in Carrier Selective Polycrystalline Si / Crystalline Si Contacts,  16th European Microscopy Conference, Lyon, france, 28.08.-02.09.2016
• J. Krügener, D. Tetzlaff, Y. Larionova, Y. Barnscheidt, S. Reiter, M. Turcu, R. Peibst, J.-D. Kähler, T. Wietler (2016): Electrical deactivation of boron in p+-poly/SiOx/crystalline silicon passivating contacts for silicon solar cells,  21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, 26.-30.09.2016
  DOI: 10.1109/IIT.2016.7882868
• J. Krügener, Y. Larionova, B. Wolpensinger, D. Tetzlaff, S. Reiter, M. Turcu, R. Peibst, J.-D. Kähler, T. Wietler (2016): Dopant diffusion from p+-poly-Si into c-Si during thermal annealing,  43rd Photovoltaic Specialists Conference (43rd IEEE PVSC), Portland, OR, USA, 05.-10.06.2016
  DOI: 10.1109/PVSC.2016.7750083
• J. Schmidt, M. Eilert, S. Peters, T. F. Wietler (2016): Characterization of Thin Si1-xGex Layers on Si(001) by Spectroscopic Ellipsometry for Ge Fractions from 0 to 100%,  7th International Conference on Spectroscopic Ellipsometry, Berlin, Germany, 06.-10.06.2016
• J.-D. Kähler, U. Höhne, J.J. Haase, D. Tetzlaff, J. Krügener, T. Wietler, Y. Larionova, S. Reiter, M. Turcu, R. Brendel, R. Peibst (2016): Low pressure chemical vapour deposition for in situ doped n+ POLO junctions in industrial silicon solar cells,  26th International Photovoltaic Science and Engineering Conference (PVSEC-26), Singapore, 24.-28.10.2016
• R. Peibst, U. Römer, Y. Larionova, M. Rienäcker, A. Merkle, N. Folchert, S. Reiter, M. Turcu, B. Min, J. Krügener, D. Tetzlaff, E. Bugiel, T. Wietler, R. Brendel (2016): Working Principle of Carrier Selective Poly-Si/c-Si Junctions: Is Tunneling the Whole Story?,  6th International Conference on Silicon Photovoltaics (6th SiliconPV), Chambéry, France, 07.-09.03.2016
• R. Peibst, Y. Larionova, S. Reiter, M. Turcu, R. Brendel, D. Tetzlaff, J. Krügener, T. Wietler, U. Höhne, J.-D. Kähler, H. Mehlich, S. Frigge (2016): Implementation of n+ and p+ poly-Si/c-Si junctions on front and rear side of double-side contacted industrial silicon solar cells,  32nd European PV Solar Energy Conference and Exhibition (32nd EU PVSEC), Munich, Germany, 20.-24.06.2016
  DOI: 10.4229/EUPVSEC20162016-2BO.3.2
• S. Reiter, N. Koper, R. Reineke-Koch, Y. Larionova, M. Turcu, J. Krügener, D. Tetzlaff, T. Wietler, U. Höhne, J.-D. Kähler, R. Brendel, R. Peibst (2016): Parasitic Absorption In Polycrystalline Si-Layers For Carrier-Selective Front Junctions,  6th International Conference on Silicon Photovoltaics (6th SiliconPV), Chambéry, France, 07.-09.03.2016
• Y. Larionova, R. Peibst, M. Turcu, S. Reiter, R. Brendel, D. Tetzlaff, J. Krügener, T. Wietler, U. Höhne, J.-D. Kähler (2016): Optimization of p+ poly-Si / c-Si junctions on wet-chemically grown interfacial oxides and on different wafer morphologies,  32nd European PV Solar Energy Conference and Exhibition (32nd EU PVSEC), Munich, Germany, 20.-24.06.2016
  DOI: 10.4229/EUPVSEC20162016-2CO.4.3
• A. Grimm, A. Fissel, E. Bugiel, H. J. Osten and T. F. Wietler (2015): In situ observation of low temperature growth of Ge on Si(111) via RHEED,  International Workshop on SPA-LEED, Hannover, Germany, 28.05.-29.05.2015
• A. Grimm, A. Fissel, E. Bugiel, H. J. Osten und T. F. Wietler (keynote talk) (2015): In situ observation of low temperature growth of Ge on Si(111) via RHEED,  Fifth european conference on crystal growth (eccg5), Bologna, Italy, 09.-11.09.2015
• A. Grimm, A. Katiyar, S. K. Ray, H. J. Osten and T. F. Wietler (2015): Room Temperature Photoluminescence of Strained Ge-layers,  Engineering of Functional Interfaces (EnFI), Hannover, Germany, 06.-07.07.2015
• A. Grimm, L. C. Kähler, and T. F. Wietler (2015): Surface preparation of virtual Germanium substrates on Si(001),  Deutscher MBE-Workshop, Paderborn, Germany, 21.-22.09.2015
• J. Schmidt, D. Tetzlaff, E. Bugiel and T. F. Wietler (2015): Strained Ge layers on virtual Si1-xGex(001) substrates,  Engineering of Functional Interfaces (EnFI), Hannover, Germany, 06.07.-07.06.2015
• J. Schmidt, D. Tetzlaff, E. Bugiel, and T. F. Wietler (2015): Strained Ge layers on virtual Si1-xGex(001) substrates,  Fifth european conference on crystal growth (eccg5), Bologna, Italy, 09.-11.09.2015
• J. Schmidt, M. Eilert and T. F. Wietler (2015): Characterization of Si1-xGex layers on Si(001) substrates by spectroscopic ellipsometry,  LNQE Nanoday 2015, Hannover, Germany, 01.10.2015
• M. Möllers, C. Margenfeld, D. Schwendt, E. Bugiel, T. F. Wietler, and H. J. Osten (2015): Non-cubic Gd2O3 on Silicon (111) Substrates,  LNQE Nanoday 2015, Hannover, Germany, 01.10.2015
• M. Möllers, C. Margenfeld, D. Schwendt, E. Bugiel, T. F. Wietler, and H. J. Osten (2015): Non-cubic Gd2O3 on Silicon (111) Substrates,  Deutscher MBE-Workshop, Paderborn, Germany, 21.-22.09.2015
• T. F. Wietler, E. Bugiel, and K. R. Hofmann (2015): How to get rid of the Sb in Surfactant-mediated Epitaxy of relaxed Germanium films on Silicon (001)?,  9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 9), Montreal, Kanada, 17.-22.05.2015
• A. Grimm, A. Katiyar, S. K. Ray, H.-J. Osten, T. F. Wietler (2014): Room Temperature PL of strained Ge-layers,  NanoDay 2014, Hannover, Germany, 01.10.2014
• J. Schmidt, M. Möllers, D. Tetzlaff, E. Bugiel, T. F. Wietler (2014): Defect analysis of virtual SME-SiGe substrates on Si(001) by transmission electron microscopy,  NanoDay 2014, Hannover, Germany, 01.10.2014
• K. Katiyar, A. Grimm, A. Rakesh, R. Bar, T. Wietler, H.-J. Osten, S. K. Ray (2014): Optical Emission Characteristics of Compressively Strained Ge Films,  Photonics 2014: 12th International Conference on Fiber Optics and Photonics, Kharagpur, India, 13.-16.12.2014
• K. Takhar, M. Biswas, D. Tetzlaff, T. Wietler, H.-J. Osten, A. Laha (2014): Monolithic integration of high performance germanium (Ge) based infrared photodetector on silicon and Ge on insulator (GeOI) substrates,  E-MRS 2014 Spring Meeting, Lille, France, 26.-30.05.2014
• D. Tetzlaff, T. F. Wietler, E. Bugiel, H.-J. Osten (2013): Carbon-mediated Epitaxy of Ge on Si,  NanoDay 2013, Hannover, Germany, 10.10.2013
• D. Tetzlaff, T. F. Wietler, E. Bugiel, H.-J. Osten (2013): Influence of growth temperature on strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy,  8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, 02.-06.06.2013
• J. Schmidt, D. Tetzlaff, E. Bugiel, T. F. Wietler (2013): Epitaxy of germanium on virtual Si1-xGex(001) substrates,  NanoDay 2013, Hannover, Germany, 10.10.2013
• T. F. Wietler, J. Schmidt, D. Tetzlaff, E. Bugiel (2013): Surfactant-Mediated Epitaxy of Silicon-Germanium Films on Silicon (001) Substrates,  8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, 02.-06.06.2013
• D. Tetzlaff , T. F. Wietler, E. Bugiel, H.-J. Osten (2012): Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy,  17th International Conference on Molecular Beam Epitaxy, Nara, Japan, 23.-28.09.2012
• H.-J. Osten, T. Wietler (2012): Materialien und Bauelemente für zukünftige Si-basierte Elektronik,  LNQE-Kolloquium, Hannover, Germany, 05.12.2012
• T. F. Wietler, E. P. Rugeramigabo, E. Bugiel, E. Garralaga Rojas (2012): Relaxed Germanium on Porous Silicon Substrates,  2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), Berkeley, California, USA, 04.-06.06.2012
• D. Tetzlaff , T. Wietler, E. Bugiel, H.-J. Osten (2011): Carbon-Mediated Growth of Epitaxial Germanium Layers on Silicon,  7th International Conference on Si Epitaxy and Heterostructures (ICSI 7), Leuven, Belgium, 28.08.-01.09.2011
• D. Tetzlaff, T. Wietler, E. Bugiel, H.-J. Osten (2011): Ge-Epitaxie für NIR-Fotodetektoren,  NanoDay 2011, Hannover, Germany, 29.09.2011
• D. Tetzlaff, T. Wietler, E. Bugiel, H.-J. Osten (2011): Kohlenstoffunterstütztes Wachstum von epitaktischen Germaniumschichten auf Silizium,  Deutscher MBE-Workshop 2011, Berlin, Germany, 05.-06.10.2011
• J. Ruhkopf, T. F. Wietler, E. P. Rugeramigabo, D. Tetzlaff, J. Krügener, E. Bugiel, H.-J. Osten (2011): Surfactant-mediated epitaxy of germanium layers on vicinal silicon substrates,  Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Dresden, Germany, 13.-18.03.2011
• T. F. Wietler, J. Ruhkopf, E. P. Rugeramigabo, D. Tetzlaff, J. Krügener, E. Bugiel, H.-J. Osten (2011): Surfactant-Mediated Epitaxy of Germanium on Vicinal Silicon Substrates,  7th International Conference on Si Epitaxy and Heterostructures (ICSI 7), Leuven, Belgium, 28.08.-01.09.2011
• T. F. Wietler, J. Ruhkopf, E. P. Rugeramigabo, D. Tetzlaff, J. Krügener, E. Bugiel, H.-J. Osten (2011): Surfactant-modifizierte Epitaxie von Germanium auf fehlgeneigten Siliziumsubstraten,  Deutscher MBE-Workshop 2011, Berlin, Germany, 05.-06.10.2011
• T. Wietler (invited) (2011): Surfactant-modified epitaxy of germanium layers on silicon for high-mobility channels,  16th European Molecular Beam Epitaxy Workshop, Alpe d'Huez, France, 20.-23.03.2011
• T. F. Wietler, E. P. Rugeramigabo, E. Bugiel, K. R. Hofmann (2010): Strain Relaxation Engineering in Epitaxy of Ge on Si(001): The Impact of Sb-Coverage on Interdiffusion,  16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010
• T. F. Wietler, P. Turewicz, E. P. Rugeramigabo, D. Schwendt, D. Tetzlaff, E. Bugiel, K. R. Hofmann (2010): P-type Ge films on Si(001) grown by surfactant-mediated epitaxy,  International SiGe Technology and Device Meeting, Stockholm, Sweden, 24.-26.05.2010
• A. Fissel, R. Dargis, E. Bugiel, J. Krügener, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2009): Single-crystalline silicon on single-crystalline insulator prepared by different approaches,  E-MRS 2009, Symposium I, Strasbourg, France, 08.-12.06.2009
• R. Dargis, A. Fissel, D. Schwedt, E. Bugiel, J. Krügener, T. Wietler, A. Laha, H.-J. Osten (2009): Epitaxial Growth of Silicon on Rare-Earth Metal oxide,  4th Symposium on Vacuum based Science and Technology, Koszalin-Kolobrzeg, Poland, 21.-23.09.2009
• R. Dargis, A. Fissel, E. Bugiel, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2008): Development of multi-step procedure for epitaxial growth of crystalline silicon on rare-earth-metal oxide for SOI-applications,  14th International Conference on Solid Films and Surfaces (ICSFS), Dublin, 29.06.-04.07.2008
• T. F. Wietler, E. P. Rugeramigabo, E. Bugiel, K. R. Hofmann (2008): Influence of Sb induced surface faceting on misfit dislocation formation in Ge heteroepitaxy on Si(001),  29th International Conference on the Physics of Semiconductors (ICPS 2008), Rio de Janeiro, Brazil, 27.07.-01.08.2008
• T. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, H.-J. Osten (2008): Epitaxial growth of Gd2O3 on Ge films grown by surfactant-mediated epitaxy on Si(001) substrates,  4th International SiGe Technology and Device Meeting (ISTDM 2008), Taiwan, 11.-14.05.2008
• T. F. Wietler, E. Bugiel, K. R. Hofmann (2007): Relaxed Germanium Films on Silicon(110),  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France 20.-24.05.2007
• T. F. Wietler, E. Bugiel, K. R. Hofmann (2007): Tuning Strain Relaxation by Surface-Morphology: Surfactant-Mediated Epitaxy of Germanium on Si(100) and Si(111),  11th International Conference on the Formatin of Semiconductor Interfaces (ICFSI), Manaus, Brasil, 19.-24.08.2007
• O. Kerker, T. F. Wietler, K. R. Hofmann (2006): Characterization of HfO2 deposited by reactive sputtering as gate dielectric for epitaxial Ge-MOSFETs on Si wafers,  E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
• T. F. Wietler, E. Bugiel and K. R. Hofmann (2006): Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates,  E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
• T. F. Wietler, E. Bugiel, K. R. Hofmann (2006): Surfactant-mediated epitaxy of germanium on structured silicon substrates: towards embedded germanium,  28th International Conference on the Physics of Semiconductors (ICPS), Wien, Austria, 24.-28.07.2006
• K. R. Hofmann, T. F. Wietler, E. Bugiel, R. Kurps (2005): High Quality Germanium Films Grown Directly on Si(001) by Surfactant Mediated Epitaxy,  Electronic Materials Conference, University of California, Santa Barbara, California, USA, 22.-24.06.2005
• T. F. Wietler, E. Bugiel, K. R. Hofmann (2005): Surfactant Mediated Epitaxy of High-Quality Low-Doped Relaxed Germanium Films on Silicon (001),  Fourth International Conference on Silicon Epitaxy and Heterostructures, ICSI-4, Awaji Island, Hyogo, Japan, 23.-26.05.2005
• C. R. Wang, B. H. Müller, M. Bierkandt, E. Bugiel, T. Wietler, K. R. Hofmann (2004): Growth of CaF2/Si/CaF2 Resonant-Tunneling Structures by B and Sb Surfactant-Enhanced Epitaxy,  E-MRS Spring Meeting, Strasbourg, France, 24.-28.05.2004
• C. R. Wang, B. H. Müller, M. Bierkandt, E. Bugiel, T. Wietler, K. R. Hofmann (2004): Growth of CaF2/Si/CaF2 Resonant-Tunneling Structures by B and Sb Surfactant-Enhanced Epitaxy,  44th Electronic Materials Conference 2004, University of Notre Dame, Notre Dame, Indiana, USA, 23.-25.06.2004
• C. R. Wang, B. H. Müller, M. Bierkandt, T. Wietler, E. Bugiel, and K. R. Hofmann (2004): Boron surfactant-enhanced growth of Si films on CaF2/Si,  E-MRS Spring Meeting, Strasbourg, France, 24.-28.05.2004
• C. R. Wang, M. Bierkandt, B. H. Müller, S. Paprotta, E. Bugiel, T. Wietler, K. R. Hofmann (2004): Fabrication of Resonant-Tunneling Diodes by B Surfactant Modified Growth of Si Films on CaF2/Si,  DPG-Frühjahrstagung, Regensburg, Germany, 08.-12.03.2004
• C. R. Wang, M. Bierkandt, B. H. Müller, S. Paprotta, E. Bugiel, T. Wietler, K. R. Hofmann (2004): Fabrication of Resonant-Tunneling Diodes by B Surfactant-Enhanced Growth of Si Quantum Well Layers on CaF2/Si,  4th IEEE Conference on Nanotechnology, Munich, Germany, 17.-19.08.2004
• T. F. Wietler, A. Ott, E. Bugiel, K. R. Hofmann (2004): Advances in Growth and Device Processing of Germanium Films on Si(111),  Second International SiGe Technology and Device Meeting, Frankfurt/Oder, Germany, 16.-19.05.2004
• T. F. Wietler, K. R. Hofmann (2004): XRD analysis of Ge- and GexSi1-x-layers grown by surfactant mediated epitaxy,  DPG-Frühjahrstagung, Regensburg, Germany, 08.-12.03.2004
• T. Wietler, N. Hoffmann, E. Bugiel, K. R. Hofmann (2003): Growth and characterisation of Ge- and GexSi1-x-multilayers on virtual GeSi-substrates,  DPG-Frühjahrstagung, Dresden, Germany, 24.-28.03.2003
• I. Dumkow, T. Wietler, K. R. Hofmann, M. Horn-von Hoegen (2002): Germanium auf relaxierten Ge0.8Si0.2 Pseudosubstraten Präparation und Morphologie,  DPG-Tagung 2002, Regensburg, Germany, March 11.-15.03.2002
• S. Paprotta, F. Beug, T. Wietler, R. Ferretti, K. R. Hofmann (2002): Characterization of Gate-Stacks with Silicon and Germanium Nano-Crystals for Memory Application,  International Workshop NEOP, 7, Dresden, Germany, 07.-09.10.2002
• T. Wietler, N. Hoffmann, K. R. Hofmann (2002): Untersuchung dünner GexSi1-x-Pseudosubstrate auf Silizium,  DPG-Tagung 2002, Regensburg, Germany, March 11.-15.03.2002
• N. Hoffmann, T. Wietler, M. Kammler, D. Reinking, K. R. Hofmann, M. Horn-von Hoegen (2000): Surfactant modifizierte Epitaxie: Herstellung und elektrische Charakterisierung eines Ge-p-Kanal-MOSFETs auf Si-Substrat,  DPG-Frühjahrstagung 2000, Regensburg, Germany, 27.-31.04.2000