Publikationen
Journal
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(2020): Ion-Implanted Epitaxially Grown Gd2O3 on Silicon with Improved Electrical Properties, Journal of Electronic Materials 49 (2020) 6270
DOI: 10.1007/s11664-020-08392-4 -
(2020): Nanostructured Front Electrodes for Perovskite/c-Si Tandem Photovoltaics, Optics Express 28 (2020) 8878
DOI: 10.1364/OE.382253 -
(2020): 2D/3D Heterostructure for Semitransparent Perovskite Solar Cells with Engineered Bandgap Enables Efficiencies Exceeding 25% in Four‐Terminal Tandems with Silicon and CIGS, Advanced Functional Materials 30 (2020) 1909919
DOI: 10.1002/adfm.201909919 -
(2018): Carbon-mediated epitaxy of SiGe virtual substrates on Si(001), Semiconductor Science and Technology 33 (2018) 114002
DOI: 10.1088/1361-6641/aadffc -
(2018): Building blocks for industrial, screen-printed double-side contacted POLO cells with highly transparent ZnO:Al layers, IEEE Journal of Photovoltaics 8 (2018) 719
DOI: 10.1109/JPHOTOV.2018.2813427 -
(2018): High temperature annealing of ZnO:Al on passivating POLO junctions: Impact on transparency, conductivity, junction passivation and interface stability, IEEE Journal of Photovoltaics 9 (2018) 89
DOI: 10.1109/JPHOTOV.2018.2878337 -
(2018): Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy, Semiconductor Science and Technology 33 (2018) 104006
DOI: 10.1088/1361-6641/aade69 -
(2017): A Simple Method for Pinhole Detection in Carrier Selective POLO-Junctions for High Efficiency Silicon Solar Cells, Solar Energy Materials & Solar Cells 173 (2017) 106
DOI: 10.1016/j.solmat.2017.05.041 -
(2017): Introducing Pinhole Magnification by Selective Etching: Application to Poly-Si on Ultra-Thin Silicon Oxide Films, Energy Procedia 124 (2017) 435
DOI: 10.1016/j.egypro.2017.09.270 -
(2017): Surfactant-Mediated Epitaxy of Thin Germanium Films on SiGe(001) Virtual Substrates, Journal of Crystal Growth 457 (2016) 171
DOI: 10.1016/j.jcrysgro.2016.06.053 -
(2017): Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100%, Applied Surface Science 421 (2017) 772
DOI: 10.1016/j.apsusc.2016.08.091 -
(2017): Growth of epitaxially stabilized, non-cubic Gd2O3 on silicon(111) substrates, Journal of Crystal Growth 480 (2017) 141
DOI: 10.1016/j.jcrysgro.2017.10.019 -
(2017): Pinhole Density and Contact Resistivity of Carrier Selective Junctions with Polycrystalline Silicon on Oxide, Applied Physics Letters 110 (2017) 253902
DOI: 10.1063/1.4986924 -
(2017): On the recombination behavior of p+-type polysilicon on oxide junctions deposited by different methods on textured and planar surfaces, Physica Status Solidi A: Applications and Materials Science 217 (2017) 1700058
DOI: 10.1002/pssa.201700058 -
(2016): In situ observation of low temperature growth of Ge on Si(111) by reflection high energy electron diffraction, Applied Surface Science 370 (2016) 40
DOI: 10.1016/j.apsusc.2016.02.144 -
(2016): Formation and properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon, Journal of Applied Physics 120 (2016) 144103
DOI: 10.1063/1.4964431 -
(2016): Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films, Nanotechnology 27 (2016) 435204
DOI: 10.1088/0957-4484/27/43/435204 -
(2016): Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3, Journal of Applied Physics 120 (2016) 014101
DOI: 10.1063/1.4958301 -
(2016): Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story?, Solar Energy Materials & Solar Cells 158 (2016) 60
DOI: 10.1016/j.solmat.2016.05.045 -
(2016): Parasitic Absorption in Polycrystalline Si-layers for Carrier-selective Front Junctions, Energy Procedia 92 (2016) 199
DOI: 10.1016/j.egypro.2016.07.057 -
(2015): Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells, IEEE Journal of Photovoltaics 5 (2015) 507
DOI: 10.1109/JPHOTOV.2014.2382975 -
(2014): A Simple Model Describing the Symmetric I-V Characteristics of p Polycrystalline/n Monocrystalline Si, and n Polycrystalline Si/p Monocrystalline Si Junctions, IEEE Journal of Photovoltaics 4 (2014) 841
DOI: 10.1109/JPHOTOV.2014.2310740 -
(2014): Surfactant-mediated epitaxy of silicon germanium films on silicon (001) substrates, Thin Solid Films 557 (2014) 27
DOI: 10.1016/j.tsf.2013.08.125 -
(2014): Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions, Solar Energy Materials and Solar Cells 131 (2014) 85
DOI: 10.1016/j.solmat.2014.06.003 -
(2013): Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy, Journal of Crystal Growth 378 (2013) 254
DOI: 10.1016/j.jcrysgro.2012.12.087 -
(2012): Carbon-mediated growth of thin, fully relaxed germanium films on silicon, Applied Physics Letters 100 (2012) 012108
DOI: 10.1063/1.3675450 -
(2010): Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy, Thin Solid Films 518 (2010) 2546
DOI: 10.1016/j.tsf.2009.09.139 -
(2010): Epitaxial growth and thermal stability of silicon layers on crystalline rare-earth metal oxides, Vacuum 85 (2010) 523
DOI: 10.1016/j.vacuum.2010.01.026 -
(2009): Epitaxial Growth and Properties of Silicon on Crystalline Rare-Earth-Metal Oxide for SOI Applications, Material Science (MEDŽIAGOTYRA) 15 (2009) 11
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(2009): Development of multi-step procedure for epitaxial growth of crystalline silicon on rare-earth-metal oxide for SOI-applications, e-Journal of Surface Science and Nanotechnology 7 (2009) 405
DOI: 10.1380/ejssnt.2009.405 -
(2009): Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(001) substrates, Solid-State Electronics 53 (2009) 833
DOI: 10.1016/j.sse.2009.04.027 -
(2009): Influence of Sb Induced Surface Faceting on Structural Properties Of Relaxed Ge Films On Si(001), Physics of Semiconductors: 29th International Conference on the Physics of Semiconductors, AIP Conference Proceedings 1199 (2009) 15
DOI: 10.1063/1.3295345 -
(2008): Relaxed germanium films on silicon (110), Thin Solid Films 517 (2008) 272
DOI: 10.1016/j.tsf.2008.08.018 -
(2008): Tuning Strain Relaxation by Surface-Morphology: Surfactant-Mediated Epitaxy of Germanium on Silicon, Applied Surface Science 255 (2008) 778
DOI: 10.1016/j.apsusc.2008.07.030 -
(2007): Energy relaxation and anomalies in the thermo-acoustic response of femtosecond laser-excited Germanium, Ultrafast Phenomena XV, Springer Series in Chemical Physics 88 (2007) 597
DOI: 10.1007/978-3-540-68781-8_192 -
(2007): Surfactant‐Mediated Epitaxy of Germanium on Structured Silicon Substrates: Towards Embedded Germanium, AIP Conference Proceedings 893 (2007) 67
DOI: 10.1063/1.2729773 -
(2007): Diffraction of strongly convergent X-rays from picosecond acoustic transients, Applied Physics A: Materials Science & Processing 87 (2007) 7
DOI: 10.1007/s00339-007-3863-6 -
(2006): Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates, Materials Science in Semiconductor Processing 9 (2006) 659
DOI: 10.1016/j.mssp.2006.08.014 -
(2006): Surfactant Mediated Epitaxy of High-Quality Low-Doped Relaxed Germanium Films on Silicon (001), Thin Solid Films 508 (2006) 6
DOI: 10.1016/j.tsf.2005.08.410 -
(2005): Surfactant Mediated Epitaxy of Relaxed Low-Doped Ge Films on Si(001) with Low Defect Densities, Applied Physics Letters 87 (2005) 182102
DOI: 10.1063/1.2120900
