-
D. Müller-Sajak, H. Pfnür, A. Cosceev, K. R. Hofmann
(2010):
Crystalline lattice-matched B 0.7Sr0.3O on Si(001) as Gate Dielectric,
Electronic Materials Conference, Notre-Dame, Indiana, USA, 23.-25.06.2010
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J. S. de Sousa, R. Peibst, K. R. Hofmann, G. A. Farias, J.-P. Leburton
(2010):
Electron charging and discharging in Ge nanocrystal flash memories; one by one,
International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN-2010), Beijing, China, 18.-23.07.2010
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T. F. Wietler, E. P. Rugeramigabo, E. Bugiel, K. R. Hofmann
(2010):
Strain Relaxation Engineering in Epitaxy of Ge on Si(001): The Impact of Sb-Coverage on Interdiffusion,
16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010
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T. F. Wietler, P. Turewicz, E. P. Rugeramigabo, D. Schwendt, D. Tetzlaff, E. Bugiel, K. R. Hofmann
(2010):
P-type Ge films on Si(001) grown by surfactant-mediated epitaxy,
International SiGe Technology and Device Meeting, Stockholm, Sweden, 24.-26.05.2010
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A. Cosceev, D. Müller-Sajak, H. Pfnür, K. R. Hofmann
(2009):
Preparation and Electrical Characterization of Amorphous BaO, SrO and Ba0.7Sr0.3O as High-k Gate Dielectrics,
12th International Conference on the Formation of Semiconductor Interfaces" (ICFSI-12), Weimar, Germany, 05.-10.07.2009
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D. Müller-Sajak, A. Cosceev, H. Pfnür, K. R. Hofmann
(2009):
Investigation of Epitaxy and Electrical Properties of the Alkaline-Earth Oxides BaO, SrO and Ba0.7Sr0.3O on Si(001) as Alternative Gate Dielectrics,
6th International Conference on Silicon Epitaxy and Heterostructures, ICSI-6, Los Angeles, USA, 17.-22.05.2009
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K. R. Hofmann, A. Cosceev, D. Müller-Sajak, H. Pfnür
(2009):
Crystalline lattice-matched Ba0.7Sr0.3O on Si(001) as Gate Dielectric,
IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, USA, 03.-05.12.2009
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M. Erenburg, R. Peibst, E. Bugiel, K. R. Hofmann
(2008):
Write and retention characteristics of electrons and holes in MOS field-effect transistors with Ge nanocrystal floating gate,
5th Workshop on Dielectrics in Microelectronics (WoDiM), Bad Saarow, Germany, 23.-25.06.2008
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R. Peibst, T. Dürkop, E. Bugiel, N. Koo, T. Mollenhauer, M. C. Lemme, H. Kurz, K. R. Hofmann
(2008):
PECVD grown Ge nanocrystals embedded in SiO2: from disordered to templated self-organization,
15th International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008), Natal, Brazil, 03.-08.08.2008
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T. F. Wietler, E. P. Rugeramigabo, E. Bugiel, K. R. Hofmann
(2008):
Influence of Sb induced surface faceting on misfit dislocation formation in Ge heteroepitaxy on Si(001),
29th International Conference on the Physics of Semiconductors (ICPS 2008), Rio de Janeiro, Brazil, 27.07.-01.08.2008
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T. Dürkop, E. Bugiel, I. Costina, A. Ott, R. Peibst, K. R. Hofmann
(2007):
PE-CVD Fabrication of Germanium Nanoclusters for Memory Applications,
E-MRS 2007 Spring Meeting, Strasbourg, France, 28.05.-01.06.2007
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T. F. Wietler, E. Bugiel, K. R. Hofmann
(2007):
Relaxed Germanium Films on Silicon(110),
5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France 20.-24.05.2007
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T. F. Wietler, E. Bugiel, K. R. Hofmann
(2007):
Tuning Strain Relaxation by Surface-Morphology: Surfactant-Mediated Epitaxy of Germanium on Si(100) and Si(111),
11th International Conference on the Formatin of Semiconductor Interfaces (ICFSI), Manaus, Brasil, 19.-24.08.2007
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G. Krause, M. F. Beug, T. Müller, T. Mikolajick, K. R. Hofmann
(2006):
1/f Noise Analysis of a 75 nm Twin-Flash Technology Non-Volatile Memory Cell,
7th Non-Volatile Memory Technology Symposium, San Mateo, California, USA, 05.-08.11.2006
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O. Kerker, T. F. Wietler, K. R. Hofmann
(2006):
Characterization of HfO2 deposited by reactive sputtering as gate dielectric for epitaxial Ge-MOSFETs on Si wafers,
E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
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T. F. Wietler, E. Bugiel and K. R. Hofmann
(2006):
Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates,
E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
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T. F. Wietler, E. Bugiel, K. R. Hofmann
(2006):
Surfactant-mediated epitaxy of germanium on structured silicon substrates: towards embedded germanium,
28th International Conference on the Physics of Semiconductors (ICPS), Wien, Austria, 24.-28.07.2006
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K. R. Hofmann, T. F. Wietler, E. Bugiel, R. Kurps
(2005):
High Quality Germanium Films Grown Directly on Si(001) by Surfactant Mediated Epitaxy,
Electronic Materials Conference, University of California, Santa Barbara, California, USA, 22.-24.06.2005
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M. F. Beug, R. Ferretti, K. R. Hofmann
(2005):
Polarity dependent generation of gate-side and substrate-side border traps in nitrided gate oxides,
Insulating Films on Semiconductors, INFOS 2005, Leuven, Belgium, 22.-24.06.2005
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O. Kerker, J. Zachariae, F. Mirza, R. Ferretti, K. R. Hofmann
(2005):
Investigation of Electrical and Optical Properties of BaxSr1-xO Gate Oxide MIS Structures,
DPG-Frühjahrstagung, Berlin, Germany, 04.-09.03.2005
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T. F. Wietler, E. Bugiel, K. R. Hofmann
(2005):
Surfactant Mediated Epitaxy of High-Quality Low-Doped Relaxed Germanium Films on Silicon (001),
Fourth International Conference on Silicon Epitaxy and Heterostructures, ICSI-4, Awaji Island, Hyogo, Japan, 23.-26.05.2005
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C. Deiter, A. Gerdes, E. P. Rugeramigabo, J. Wollschläger, C. R. Wang, B. H. Müller, K. R. Hofmann
(2004):
GIXRD and AFM Investigations of CaF2/Si Multilayers,
DPG-Frühjahrstagung, Regensburg, Germany, 08.-12.03.2004
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C. R. Wang, B. H. Müller, M. Bierkandt, E. Bugiel, T. Wietler, K. R. Hofmann
(2004):
Growth of CaF2/Si/CaF2 Resonant-Tunneling Structures by B and Sb Surfactant-Enhanced Epitaxy,
E-MRS Spring Meeting, Strasbourg, France, 24.-28.05.2004
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C. R. Wang, B. H. Müller, M. Bierkandt, E. Bugiel, T. Wietler, K. R. Hofmann
(2004):
Growth of CaF2/Si/CaF2 Resonant-Tunneling Structures by B and Sb Surfactant-Enhanced Epitaxy,
44th Electronic Materials Conference 2004, University of Notre Dame, Notre Dame, Indiana, USA, 23.-25.06.2004
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C. R. Wang, B. H. Müller, M. Bierkandt, T. Wietler, E. Bugiel, and K. R. Hofmann
(2004):
Boron surfactant-enhanced growth of Si films on CaF2/Si,
E-MRS Spring Meeting, Strasbourg, France, 24.-28.05.2004
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C. R. Wang, M. Bierkandt, B. H. Müller, S. Paprotta, E. Bugiel, T. Wietler, K. R. Hofmann
(2004):
Fabrication of Resonant-Tunneling Diodes by B Surfactant Modified Growth of Si Films on CaF2/Si,
DPG-Frühjahrstagung, Regensburg, Germany, 08.-12.03.2004
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C. R. Wang, M. Bierkandt, B. H. Müller, S. Paprotta, E. Bugiel, T. Wietler, K. R. Hofmann
(2004):
Fabrication of Resonant-Tunneling Diodes by B Surfactant-Enhanced Growth of Si Quantum Well Layers on CaF2/Si,
4th IEEE Conference on Nanotechnology, Munich, Germany, 17.-19.08.2004
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T. F. Wietler, A. Ott, E. Bugiel, K. R. Hofmann
(2004):
Advances in Growth and Device Processing of Germanium Films on Si(111),
Second International SiGe Technology and Device Meeting, Frankfurt/Oder, Germany, 16.-19.05.2004
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T. F. Wietler, K. R. Hofmann
(2004):
XRD analysis of Ge- and GexSi1-x-layers grown by surfactant mediated epitaxy,
DPG-Frühjahrstagung, Regensburg, Germany, 08.-12.03.2004
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B. H. Müller, C. R. Wang, A. Bugiel, K. R. Hofmann
(2003):
Surfactant modified epitaxy of Si on CaF2/Si(111),
DPG-Jahrestagung, Dresden, Germany, 24.-28.03.2003
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C. R. Wang, B. H. Müller and K. R. Hofmann
(2003):
Double-barrier resonant-tunneling diode by surfactant-assisted growth of Si on CaF2/Si,
2003 IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, 08.-09.06.2003
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C. R. Wang, B. H. Müller, K. R. Hofmann
(2003):
High temperature growth of CaF2 on Si(111) substrates,
DPG-Jahrestagung, Dresden, Germany, 24.-28.03.2003
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C. R. Wang, B. H. Müller, T. Wietler, E. Bugiel. K. R. Hofmann
(2003):
Surfactant enhanced growth of thin Si films on CaF2/Si(111),
2003 E-MRS Spring Meeting, Strasbourg, France, 10.-13.06.2003
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F. Beug, R. Ferretti, K. R. Hofmann
(2003):
Detailed investigation of the transient local tunneling in gate oxides,
2003 IEEE International Reliability Physics Symposium, Dallas, Texas, USA, 30.03.-04.04.2003
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T. Wietler, N. Hoffmann, E. Bugiel, K. R. Hofmann
(2003):
Growth and characterisation of Ge- and GexSi1-x-multilayers on virtual GeSi-substrates,
DPG-Frühjahrstagung, Dresden, Germany, 24.-28.03.2003
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B. H. Müller, C. Wang, K. R. Hofmann
(2002):
Fabrication and I-V measurements of CaF2/Si/CaF2 resonant tunnelling diodes,
DPG-Tagung 2002, Regensburg, Germany, March 11.-15.03.2002
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B. H. Müller, C. Wang, K. R. Hofmann
(2002):
MBE growth of thin Si films on CaF2/Si(111) for resonant tunnelling structures,
E-MRS 2002 Spring Meeting, Symposium J, Strasbourg, France, 18.-21.06.2002
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B. H. Müller, C. Wang, K. R. Hofmann
(2002):
Growth of CaF2/Si/CaF2 Resonant-Tunneling Structures,
43rd Electronic Materials Conference 2002, University of California, Santa Barbara, California, USA, 26.-28.06.2002
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B. Müller, C. Wang, K. R. Hofmann
(2002):
Topographische und elektrische Charakterisierung von Si/CaF2-Heteroschichtfolgen auf Si(111),
DPG-Tagung 2002, Regensburg, Germany, March 11.-15.03.2002
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C. Wang, B. H. Müller, K. R. Hofmann
(2002):
CaF2/Si/CaF2 Double-Barrier Resonant Tunneling Diodes on Silicon,
IEEE 2002 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA, 09.-10.06.2002
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C. Wang, B. H. Müller, K. R. Hofmann
(2002):
Friction force material contrast during the initial stage of CaF2/Si(111) epitaxy,
21st European Conference on Surface Science, Malmö, Sweden, 24.-28.06.2002
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I. Dumkow, T. Wietler, K. R. Hofmann, M. Horn-von Hoegen
(2002):
Germanium auf relaxierten Ge0.8Si0.2 Pseudosubstraten Präparation und Morphologie,
DPG-Tagung 2002, Regensburg, Germany, March 11.-15.03.2002
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S. Paprotta, F. Beug, T. Wietler, R. Ferretti, K. R. Hofmann
(2002):
Characterization of Gate-Stacks with Silicon and Germanium Nano-Crystals for Memory Application,
International Workshop NEOP, 7, Dresden, Germany, 07.-09.10.2002
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S. Paprotta, R. Ferretti, K. R. Hofmann, J. D. Kähler
(2002):
Characterization of LPCVD-SiO2 and ONO-Stacks using BTBAS as Precursor,
5th International Meeting of CREMSI, STUniversity, Fuveau, France, 14.-15.11.2002
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T. Wietler, N. Hoffmann, K. R. Hofmann
(2002):
Untersuchung dünner GexSi1-x-Pseudosubstrate auf Silizium,
DPG-Tagung 2002, Regensburg, Germany, March 11.-15.03.2002
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B. H. Müller, C. Wang, K. R. Hofmann
(2001):
Morphologies of CaF2 films grown by MBE on Si(111) substrates,
DPG-Tagung 2001, Hamburg, Germany, 26.-30.03.2001
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C. R. Wang, B. H. Müller, K. R. Hofmann
(2001):
Molecular Beam Epitaxy of CaF2 on Si(111),
42nd Electronic Materials Conference 2001, Notre Dame, Indiana, USA, 27.-29.06.2001
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T. Wietler, N. Hoffmann, K. R. Hofmann
(2001):
Herstellung von GexSi1-x-Schichten auf Si-Substraten mittels Surfactant Modifizierter Epitaxie,
DPG-Tagung 2001, Hamburg, Germany, 26.-30.03.2001
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C. Wang, B. H. Müller, K. R. Hofmann
(2000):
Electronic and structural characterization of MBE CaF2 epilayers on Si(111) substrates,
DPG-Frühjahrstagung 2000, Regensburg, Germany, 27.-31.04.2000
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J. Wollschläger, M. Bierkandt, M. Grimsehl, A. Klust, T. Schmidt, J. Falta, B. H. Müller, K. R. Hofmann
(2000):
Struktur der CaF2/Si(111)-Grenzfläche,
DPG-Frühjahrstagung 2000, Regensburg, Germany, 27.-31.04.2000
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N. Hoffmann, T. Wietler, M. Kammler, D. Reinking, K. R. Hofmann, M. Horn-von Hoegen
(2000):
Surfactant modifizierte Epitaxie: Herstellung und elektrische Charakterisierung eines Ge-p-Kanal-MOSFETs auf Si-Substrat,
DPG-Frühjahrstagung 2000, Regensburg, Germany, 27.-31.04.2000
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B. H. Müller, K. R. Hofmann
(1999):
Heteroepitaktische CoSi2/CaF2 Strukturen auf Si
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M. Kammler, K. R. Hofmann, A. A. AlFalou, M. Horn-von Hoegen
(1999):
Surfactant modifizierte Epitaxie von relaxierten Ge1-xSix/Si-Filmen auf Si,
DPG Frühjahrstagung 1999, Freiburg i. Br., Germany, 22.-26.04.1999
