Publikationen

Journal

• R. Peibst, U. Römer, K. R. Hofmann, B. Lim, T. F. Wietler, J. Krügener, N.-P. Harder, R. Brendel (2014): A Simple Model Describing the Symmetric I-V Characteristics of p Polycrystalline/n Monocrystalline Si, and n Polycrystalline Si/p Monocrystalline Si Junctions,  IEEE Journal of Photovoltaics 4 (2014) 841
  DOI: 10.1109/JPHOTOV.2014.2310740
• S. Islam, D. Mueller-Sajak, K. R. Hofmann, H. Pfnür (2013): Epitaxial thin films of BaSrO as gate dielectric,  Microelectronic Engineering 109 (2013) 152
  DOI: 10.1016/j.mee.2013.03.105
• D. Müller-Sajak, S. Islam, H. Pfnür, K. R. Hofmann (2012): Temperature stability of ultra-thin mixed BaSr-oxide layers and their transformation,  Nanotechnology 23 (2012) 305202
  DOI: 10.1088/0957-4484/23/30/305202
• R. Peibst, E. P. Rugeramigabo, K. R. Hofmann (2012): Electrical characterization and modelling of n-n Ge-Si heterojunctions with relatively low interface state densities,  Journal of Applied Physics 112 (2012) 124502
  DOI: 10.1063/1.4768255
• J. S. de Sousa, R. Peibst, M. Erenburg, E. Bugiel, G. A. Farias, J.-P. Leburton, K. R. Hofmann (2011): Single electron charging and discharging analysis in Ge nanocrystal memories,  IEEE Transactions Electron Devices 58 (2011) 376
  DOI: 10.1109/TED.2010.2091959
• J. Wollschläger, C. Deiter, C. R. Wang, B. H. Müller, K. R. Hofmann (2011): Surfactant Enhanced Solid Phase Epitaxy of Ge/CaF2/Si(111): Synchrotron X-ray Characterization of Structure and Morphology,  Journal of Applied Physics 110 (2011) 102205
  DOI: 10.1063/1.3661174
• M. F. Beug, G. Tempel, K. R. Hofmann (2011): Gate-Side and Substrate-Side Oxide Trap and Interface State Generation in Conventional and Nitrided Tunnel Oxides of Floating Gate Cells,  IEEE Transactions Electron Devices 58 (2011) 819
  DOI: 10.1109/TED.2010.2102034
• A. Cosceev, D. Müller-Sajak, H. Pfnür, K. R. Hofmann (2010): Investigation of the electrical properties of the alkaline-earth oxides BaO, SrO and Ba0.7Sr0.3O on Si(001) as alternative gate dielectrics,  Thin Solid Films 518 (2010) 281
  DOI: 10.1016/j.tsf.2009.10.108
• J. S. de Sousa, R. Peibst, G. A. Farias, J.-P. Leburton, K. R. Hofmann (2010): Interface defect-assisted single electron charging (and discharging) dynamics in Ge nanocrystals memories,  Applied Physics Letters 97 (2010) 013504
  DOI: 10.1063/1.3455899
• R. Peibst, J. S. de Sousa, K. R. Hofmann (2010): Determination of the Ge-nanocrystal/SiO2 matrix interface trap density from the small signal response of charge stored in the nanocrystals,  Physical Review B 82 (2010) 195415
  DOI: 10.1103/PhysRevB.82.195415
• R. Peibst, M. Erenburg, E. Bugiel, K. R. Hofmann (2010): Effects influencing electron and hole retention times in Ge nanocrystal memory structures operating in the direct tunneling regime,  Journal of Applied Physics 108 (2010) 054316
  DOI: 10.1063/1.3467527
• D. Müller-Sajak, A. Cosceev, C. Brand, K. R. Hofmann, H. Pfnür (2009): Preparation and electrical characterization of amorphous BaO, SrO and Ba0.7Sr0.3O as high-k gate dielectrics,  physica status solidi C 7 (2010) 316
  DOI: 10.1002/pssc.200982477
• R. Peibst, T. Dürkop, E. Bugiel, A. Fissel, I. Costina, K. R. Hofmann (2009): Driving mechanisms for the formation of nanocrystals by annealing of ultra-thin Ge layers in SiO2,  Physical Review B 79 (2009) 195316
  DOI: 10.1103/PhysRevB.79.195316
• R. Peibst, T. Dürkop, E. Bugiel, N. Koo, T. Mollenhauer, M. C. Lemme, H. Kurz, K. R. Hofmann (2009): PECVD grown Ge nanocrystals embedded in SiO2: From disordered to templated self-organization,  Microelectronics Journal 40 (2009) 759
  DOI: 10.1016/j.mejo.2008.11.008
• T. F. Wietler, E. P. Rugeramigabo, E. Bugiel, K. R. Hofmann (2009): Influence of Sb Induced Surface Faceting on Structural Properties Of Relaxed Ge Films On Si(001),  Physics of Semiconductors: 29th International Conference on the Physics of Semiconductors, AIP Conference Proceedings 1199 (2009) 15
  DOI: 10.1063/1.3295345
• T. Dürkop, E. Bugiel, I. Costina, A. Ott, R. Peibst, K. R. Hofmann (2008): PE-CVD Fabrication of Germanium Nanoclusters for Memory Applications,  Materials Science and Engineering: B 147 (2008) 213
  DOI: 10.1016/j.mseb.2007.08.022
• T. F. Wietler, E. Bugiel, K. R. Hofmann (2008): Relaxed germanium films on silicon (110),  Thin Solid Films 517 (2008) 272
  DOI: 10.1016/j.tsf.2008.08.018
• T. F. Wietler, E. Bugiel, K. R. Hofmann (2008): Tuning Strain Relaxation by Surface-Morphology: Surfactant-Mediated Epitaxy of Germanium on Silicon,  Applied Surface Science 255 (2008) 778
  DOI: 10.1016/j.apsusc.2008.07.030
• T. F. Wietler, E. Bugiel, K. R. Hofmann (2007): Surfactant‐Mediated Epitaxy of Germanium on Structured Silicon Substrates: Towards Embedded Germanium,  AIP Conference Proceedings 893 (2007) 67
  DOI: 10.1063/1.2729773
• G. Krause, M. F. Beug, R. Ferretti, S. Prasad, K. R. Hofmann (2006): High-Field Degradation of Poly-Si Gate p-MOS and n-MOS Devices with Nitrided Oxides,  IEEE Transactions: Device and Materials Reliability 6 (2006) 473
  DOI: 10.1109/TDMR.2006.881459
• G. Krause, M. F. Beug, T. Müller, T. Mikolajick, K. R. Hofmann (2006): 1/f Noise Analysis of a 75 nm Twin-Flash Technology Non-Volatile Memory Cell,  Proceedings of the 7th Non-Volatile Memory Technology Symposium (2006) 12
  DOI: 10.1109/NVMT.2006.378867
• J. Wollschläger, C. Deiter, M. Bierkandt, A. Gerdes, M. Bäumer, C. R. Wang, B. H. Müller, K. R. Hofmann (2006): Homogeneous Si Films on CaF2/Si(111) due to Boron Enhanced Solid Phase Epitaxy,  Surface Science 600 (2006) 3637
  DOI: 10.1016/j.susc.2005.12.071
• T. F. Wietler, E. Bugiel, K. R. Hofmann (2006): Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates,  Materials Science in Semiconductor Processing 9 (2006) 659
  DOI: 10.1016/j.mssp.2006.08.014
• T. F. Wietler, E. Bugiel, K. R. Hofmann (2006): Surfactant Mediated Epitaxy of High-Quality Low-Doped Relaxed Germanium Films on Silicon (001),  Thin Solid Films 508 (2006) 6
  DOI: 10.1016/j.tsf.2005.08.410
• M. F. Beug, R. Ferretti, K. R. Hofmann (2005): Polarity dependent generation of gate-side and substrate-side border traps in nitrided gate oxides,  Microelectronic Engineering 80 (2005) 444
  DOI: 10.1016/j.mee.2005.04.104
• T. F. Wietler, E. Bugiel, K. R. Hofmann (2005): Surfactant Mediated Epitaxy of Relaxed Low-Doped Ge Films on Si(001) with Low Defect Densities,  Applied Physics Letters 87 (2005) 182102
  DOI: 10.1063/1.2120900