Publikationen
Journal
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(2014): A Simple Model Describing the Symmetric I-V Characteristics of p Polycrystalline/n Monocrystalline Si, and n Polycrystalline Si/p Monocrystalline Si Junctions, IEEE Journal of Photovoltaics 4 (2014) 841
DOI: 10.1109/JPHOTOV.2014.2310740 -
(2013): Epitaxial thin films of BaSrO as gate dielectric, Microelectronic Engineering 109 (2013) 152
DOI: 10.1016/j.mee.2013.03.105 -
(2012): Temperature stability of ultra-thin mixed BaSr-oxide layers and their transformation, Nanotechnology 23 (2012) 305202
DOI: 10.1088/0957-4484/23/30/305202 -
(2012): Electrical characterization and modelling of n-n Ge-Si heterojunctions with relatively low interface state densities, Journal of Applied Physics 112 (2012) 124502
DOI: 10.1063/1.4768255 -
(2011): Single electron charging and discharging analysis in Ge nanocrystal memories, IEEE Transactions Electron Devices 58 (2011) 376
DOI: 10.1109/TED.2010.2091959 -
(2011): Surfactant Enhanced Solid Phase Epitaxy of Ge/CaF2/Si(111): Synchrotron X-ray Characterization of Structure and Morphology, Journal of Applied Physics 110 (2011) 102205
DOI: 10.1063/1.3661174 -
(2011): Gate-Side and Substrate-Side Oxide Trap and Interface State Generation in Conventional and Nitrided Tunnel Oxides of Floating Gate Cells, IEEE Transactions Electron Devices 58 (2011) 819
DOI: 10.1109/TED.2010.2102034 -
(2010): Investigation of the electrical properties of the alkaline-earth oxides BaO, SrO and Ba0.7Sr0.3O on Si(001) as alternative gate dielectrics, Thin Solid Films 518 (2010) 281
DOI: 10.1016/j.tsf.2009.10.108 -
(2010): Interface defect-assisted single electron charging (and discharging) dynamics in Ge nanocrystals memories, Applied Physics Letters 97 (2010) 013504
DOI: 10.1063/1.3455899 -
(2010): Determination of the Ge-nanocrystal/SiO2 matrix interface trap density from the small signal response of charge stored in the nanocrystals, Physical Review B 82 (2010) 195415
DOI: 10.1103/PhysRevB.82.195415 -
(2010): Effects influencing electron and hole retention times in Ge nanocrystal memory structures operating in the direct tunneling regime, Journal of Applied Physics 108 (2010) 054316
DOI: 10.1063/1.3467527 -
(2009): Preparation and electrical characterization of amorphous BaO, SrO and Ba0.7Sr0.3O as high-k gate dielectrics, physica status solidi C 7 (2010) 316
DOI: 10.1002/pssc.200982477 -
(2009): Driving mechanisms for the formation of nanocrystals by annealing of ultra-thin Ge layers in SiO2, Physical Review B 79 (2009) 195316
DOI: 10.1103/PhysRevB.79.195316 -
(2009): PECVD grown Ge nanocrystals embedded in SiO2: From disordered to templated self-organization, Microelectronics Journal 40 (2009) 759
DOI: 10.1016/j.mejo.2008.11.008 -
(2009): Influence of Sb Induced Surface Faceting on Structural Properties Of Relaxed Ge Films On Si(001), Physics of Semiconductors: 29th International Conference on the Physics of Semiconductors, AIP Conference Proceedings 1199 (2009) 15
DOI: 10.1063/1.3295345 -
(2008): PE-CVD Fabrication of Germanium Nanoclusters for Memory Applications, Materials Science and Engineering: B 147 (2008) 213
DOI: 10.1016/j.mseb.2007.08.022 -
(2008): Relaxed germanium films on silicon (110), Thin Solid Films 517 (2008) 272
DOI: 10.1016/j.tsf.2008.08.018 -
(2008): Tuning Strain Relaxation by Surface-Morphology: Surfactant-Mediated Epitaxy of Germanium on Silicon, Applied Surface Science 255 (2008) 778
DOI: 10.1016/j.apsusc.2008.07.030 -
(2007): Surfactant‐Mediated Epitaxy of Germanium on Structured Silicon Substrates: Towards Embedded Germanium, AIP Conference Proceedings 893 (2007) 67
DOI: 10.1063/1.2729773 -
(2006): High-Field Degradation of Poly-Si Gate p-MOS and n-MOS Devices with Nitrided Oxides, IEEE Transactions: Device and Materials Reliability 6 (2006) 473
DOI: 10.1109/TDMR.2006.881459 -
(2006): 1/f Noise Analysis of a 75 nm Twin-Flash Technology Non-Volatile Memory Cell, Proceedings of the 7th Non-Volatile Memory Technology Symposium (2006) 12
DOI: 10.1109/NVMT.2006.378867 -
(2006): Homogeneous Si Films on CaF2/Si(111) due to Boron Enhanced Solid Phase Epitaxy, Surface Science 600 (2006) 3637
DOI: 10.1016/j.susc.2005.12.071 -
(2006): Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates, Materials Science in Semiconductor Processing 9 (2006) 659
DOI: 10.1016/j.mssp.2006.08.014 -
(2006): Surfactant Mediated Epitaxy of High-Quality Low-Doped Relaxed Germanium Films on Silicon (001), Thin Solid Films 508 (2006) 6
DOI: 10.1016/j.tsf.2005.08.410 -
(2005): Polarity dependent generation of gate-side and substrate-side border traps in nitrided gate oxides, Microelectronic Engineering 80 (2005) 444
DOI: 10.1016/j.mee.2005.04.104 -
(2005): Surfactant Mediated Epitaxy of Relaxed Low-Doped Ge Films on Si(001) with Low Defect Densities, Applied Physics Letters 87 (2005) 182102
DOI: 10.1063/1.2120900
