Vorträge

Konferenzbeitrag

• H. Genath, J. Krügener, H.-J. Osten (2023): Growth of Nd₂O₃ layers on germanium-rich, (111)-oriented SiGe layers,  International Conference on Silicon Epitaxy and Heterostructures (ICS) / International SiGe Technology and Device Meeting (ISTDM) 2023, Como, Italy, 21. - 25.05.2023
• U. Singh, H. Genath, R. Sarkar, J. Krügener, H.J. Osten, A. Laha (2023): All Epitaxy Nd2O3/AlGaN/GaN MOSHEMT on semi-insulating (0001) 4H-SiC: Increased thermal stability at 473 K,  14th International Conference on Nitride Semiconductors (ICNS14), Fukuoka, Japan, 12. - 17.11.2023
• H. Genath, H.-J. Osten (2022): Pseudomorphically Strained Ge Layers on (111)-oriented Virtual Si1-xGex Substrates,  LNQE Nanoday 2022, Hannover, Germany, 22.09.2022
• H. Genath, J. Norberg, B. Wolpensinger, H. J. Osten (2022): Analysis of thin germanium-rich SiGe layers on Si(111) substrates,  International Conference on the Physics of Semiconductors 2022, Sydney, Australia, 27.06.-30.06.2022
• H. Genath, J. Norberg, B. Wolpensinger, H.-J. Osten (2022): Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates,  LNQE Nanoday 2022, Hannover, Germany, 22.09.2022
• H. Genath, Y. Barnscheidt, H. J. Osten (2021): Epitaxy of Gd2O3 layers on virtual SiGe substrates on Si(111),  German MBE Workshop 2021, online event, 14. - 15.10.2021
• J. Krügener, M. Rienäcker, S. Schäfer, M. Sanchez, S. Wolter, R. Brendel, S. John, H.-J. Osten, R. Peibst (2021): Towards 28 % Efficient Si Single Junction Solar Cells with Photonic Crystals,  11th International Conference on Crystalline Silicon Photovoltaics (11th SiliconPV), online event, 19. - 23.04.2021
• J. Norberg, H. Genath, H. J. Osten (2021): Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates,  German MBE Workshop 2021, online event, 14. - 15.10.2021
• J. Krügener, G. Wetzel, C. Hollemann, F. Haase, R. Peibst, H.-J. Osten (2020): Optimization of Doping Profiles in IBC pin Layout using Poly-Si-based Passivating Contacts,  30th Photovoltaic Science and Engineering Conference (PVSEC-30), Jeju, South Korea, 08.-13.11.2020
• G. Wetzel, J. Krügener, R. Peibst, A. Dietrich, B. Nacke, H. J. Osten (2019): Simulation of solar cell performance based on in the field measured ambience parameters,  9th International Conference on Silicon Photovoltaics (9th SiliconPV), Leuven, Belgium, 08. - 10.04.2019
• H. Genath, J. Schmidt, H.J. Osten (2019): Carbon-mediated Epitaxy of Germanium-rich SiGe Layers on Si(111) Substrates,  LNQE Nanoday 2019, Hannover, Germany, 10.10.2019
• J. Krügener, F. Haase, C. Hollemann, H.-J. Osten, R. Peibst (2019): Dopant diffusion through pinholes and continuous oxide layers in n-type polysilicon on oxide (POLO) passivating contacts,  29th Photovoltaic Science and Engineering Conference (PVSEC-29), Xi'an, China, 04.-08.11.2019
• J. Krügener, F. Haase, C. Hollemann, R. Peibst, U. Höhne, J.-D. Kähler, H.-J. Osten (2019): Surface passivation of in situ doped n-type polysilicon on oxide (POLO) layers for silicon solar cells,  29th Photovoltaic Science and Engineering Conference (PVSEC-29), Xi'an, China, 04.-08.11.2019
  DOI: 10.13140/RG.2.2.23832.75529
• Y. Barnscheidt, H. J. Osten (2019): Carbon-Modified-Germanium-Epitaxy: Filtering Threading Dislocations with Carbon Delta Layers,  2nd Joint ISTDM / ICSI 2019 Conference, Madison, USA, 02.-06.06.2019
• Y. Barnscheidt, J. Schmidt, and H. J. Osten (2019): Grazing Incidence X-Ray Diffraction Analysis of the Periodic Dislocation Network of Ge/Si Heterostructures,  2019 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN), Monterey, USA, 02.-04.04.2019
  DOI: 10.1149/09301.0067ecst
• J. Krügener, F. Haase, R. Peibst, H. J. Osten (invited) (2018): Ion implantation for photovoltaic applications: Review and outlook for silicon solar cells,  12th Ion Implantation and other Applications of Ions and Electrons 2018 (ION2018), Kazimierz Dolny, Poland, 18.-21.06.2018
• J. Krügener, F. Kiefer, R. Peibst, H. J. Osten (2018): Ion implantation of As, B, P, BF and BF2 on planar and alkaline-textured Si(001) surfaces for photovoltaic applications,  22nd International Conference on Ion Implantation Technology (IIT), Würzburg, Germany, 16.-21.09.2018
  DOI: 10.1109/IIT.2018.8807962
• J. Schmidt, D. Tetzlaff, T. F. Wietler, H. J. Osten (2018): Carbon-mediated epitaxy of SiGe virtual substrates on Si(001),  1st Joint ISTDM / ICSI 2018 Conference, Potsdam, Germany, 27.-31.05.2018
• K. R. Khiangte, J. S. Rathore, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra (2018): Molecular beam epitaxy of wafer-scale all-epitaxial GeSn-on-insulator on Si(111),  20th International Conference on Molecular Beam Epitaxy (ICMBE 2018) Shanghai, China, 02.-07.09.2018
• L. Montañez, I. Strauß, J. Caro, H. J. Osten (2018): Effect of interface states in thin films of metal organic frameworks obtained by the spray-coating method,  XXVIII. International Conference on Organometallic Chemistry (ICOMC2018), Florence, Italy, 15-20.07.2018
• L. Montañez, I. Strauß, J. Caro, H.J. Osten (2018): Impact of border traps in p-Si/Cu3(BTC)2/Al based MIS capacitors,  EMN Meeting on Metal-Organic Frameworks, Barcelona, Spain, 10.-14.09.2018
• P. Gribisch, J. Schmidt, H. J. Osten, A. Fissel (2018): Influence of Gd2O3 nanostructure formation on crystal structure and surface morphology during growth on Si(001),  German MBE Workshop 2018, Freiburg, Germany, 11.-12.10.2018
• Y. Barnscheidt, J. Schmidt, G. Wetzel, D. Tetzlaff, T. Wietler, H. J. Osten (2018): Highly Boron Doped Germanium grown by Carbon-Mediated-Epitaxy,  1st Joint ISTDM / ICSI 2018 Conference, Potsdam, Germany, 27.-31.05.2018
• Y. Barnscheidt, J. Schmidt, G. Wetzel, D. Tetzlaff, T.F. Wietler, H. J. Osten (2018): Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy,  Summer school on defects in semiconductors, Gent, Belgium, 10.-14.09.2018
• Y. Barnscheidt, J. Schmidt, G. Wetzel, D. Tetzlaff, T.F. Wietler, H. J. Osten (2018): Ultra-high boron-doped Ge grown by carbon-mediated epitaxy,  German MBE Workshop 2018, Freiburg, Germany, 11.-12.10.2018
• J. Krügener, F. Haase, M. Rienäcker, R. Brendel, R. Peibst, H. J. Osten (2017): Improvement of the SRH Bulk Lifetime upon Formation of n-Type POLO Junctions for 25% Efficient Si Solar Cells,  LNQE Nanoday 2017, Hannover, Germany, 28.09.2017
• J. Krügener, F. Haase, M. Rienäcker, R. Brendel, R. Peibst, H.-J. Osten (2017): Improvement of the SRH Bulk Lifetime upon Formation of n-Type POLO Junctions for 25% Efficient Si Solar Cells,  7th International Conference on Silicon Photovoltaics (7th SiliconPV), Freiburg, Germany, 03.-05.04.2017
• J. Schmidt, D. Tetzlaff, H. J. Osten (2017): Carbon-mediated epitaxy of SiGe virtual substrates on Si(001),  Austrian MBE Workshop 2017, Vienna, Austria, 28.-29.09.2017
• L. M. Montanez Huaman, I. Strauß, J. Caro, H. J. Osten (2017): Application of thin Cu3(BTC)2 films in MOS devices,  2nd European Conference on Metal Organic Frameworks and Porous Polymers, Delft, The Netherlands, 29.10.-01.11.2017
• L. Montañez, I. Strauß, J. Caro, H. J. Osten (2017): Electronic properties of Cu3(BTC)2 based MOS capacitors,  LNQE Nanoday 2017, Hannover, Germany, 28.09.2017
• A. Joseph, D. Tetzlaff, J. Schmidt, R. Böttger, T.F. Wietler, H.J. Osten (2016): Properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon,  EMN Meeting on Epitaxy, Budapest, Hungary, 04.-08.09.2016
• A. Joseph, D. Tetzlaff, J. Schmidt, R. Böttger, T.F. Wietler, H.J. Osten (2016): Properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon,  Deutscher MBE-Workshop, Garching, Germany, 13.-14.10.2016
• H. Genath, J. Schmidt, D. Tetzlaff, K. Gosh, A. Laha, and H.J. Osten (2016): Epitaxy of Gd2O3 Layers on Virtual GaN Substrates,  LNQE Nanoday 2016, Hannover, Germany, 29.09.2016
• J. Krügener, F. Kiefer, M. Rienäcker, F. Haase, R. Peibst, H.J. Osten (2016): Ion implantation for photovoltaic applications: Review and outlook for n-type silicon solar cells,  21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, 26.-30.09.2016
  DOI: 10.1109/IIT.2016.7882886
• J. Krügener, F. Kiefer, R. Peibst, H.J. Osten (2016): Comparison of experimental emitter saturation current densities and simulated defect densities of boron-implanted emitters,  21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, 26.-30.09.2016
  DOI: 10.1109/IIT.2016.7882856
• L. Montañez, J. A. Tofflinger, R. Grieseler, P. Fischer, A. Ben-Or, J. A. Guerra, R. Weingartner. H. J. Osten, A. Kribus (2016): Structural, optical, and interface properties of sputtered AlN thin films under different hydrogen dilution conditions,  Extended Defects in Semiconductors (EDS 2016), Les Issambres, France, 25.-29.09.2016
• A. Grimm, A. Fissel, E. Bugiel, H. J. Osten and T. F. Wietler (2015): In situ observation of low temperature growth of Ge on Si(111) via RHEED,  International Workshop on SPA-LEED, Hannover, Germany, 28.05.-29.05.2015
• A. Grimm, A. Fissel, E. Bugiel, H. J. Osten und T. F. Wietler (keynote talk) (2015): In situ observation of low temperature growth of Ge on Si(111) via RHEED,  Fifth european conference on crystal growth (eccg5), Bologna, Italy, 09.-11.09.2015
• A. Grimm, A. Katiyar, S. K. Ray, H. J. Osten and T. F. Wietler (2015): Room Temperature Photoluminescence of Strained Ge-layers,  Engineering of Functional Interfaces (EnFI), Hannover, Germany, 06.-07.07.2015
• A. R. Chaudhuri, H. J. Osten und A. Fissel (2015): Impact of boron on the step-free area formation during molecular beam epitaxial growth on MESA structures on Si(111),  Fifth european conference on crystal growth (eccg5), Bologna, Italy, 09.-11.09.2015
• E. Köhnen, J. Krügener, and H.J. Osten (2015): Surface passivation of ion implanted, Al2O3-passivated p+ emitters,  LNQE Nanoday 2015, Hannover, Germany, 01.10.2015
• J. Krügener, R. Peibst, E. Bugiel, D. Tetzlaff, F. Kiefer, M. Jestremski, R. Brendel, H.-J. Osten (2015): Ion Implantation of Boric Molecules for Silicon Solar Cells,  5th International Conference on Crystalline Silicon Photovoltaics (5th SiliconPV), Konstanz, Germany, 23.03.-25.03.2015
• M. Möllers, C. Margenfeld, D. Schwendt, E. Bugiel, T. F. Wietler, and H. J. Osten (2015): Non-cubic Gd2O3 on Silicon (111) Substrates,  LNQE Nanoday 2015, Hannover, Germany, 01.10.2015
• M. Möllers, C. Margenfeld, D. Schwendt, E. Bugiel, T. F. Wietler, and H. J. Osten (2015): Non-cubic Gd2O3 on Silicon (111) Substrates,  Deutscher MBE-Workshop, Paderborn, Germany, 21.-22.09.2015
• A. Fissel, A. R. Chaudhuri, J. Krügener, H.-J. Osten (2014): Influence of “1×1” – (7×7) phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si(111),  18th International Conference on Molecular Beam Epitaxy (MBE 2014), Flagstaff, Arizona, USA, 07.-12.09.2014
• A. Grimm, A. Katiyar, S. K. Ray, H.-J. Osten, T. F. Wietler (2014): Room Temperature PL of strained Ge-layers,  NanoDay 2014, Hannover, Germany, 01.10.2014
• A. Laha, A. Fissel, H.-J. Osten (2014): Semiconductor/Oxide Heterostructures on Silicon for Future Complementary Metal Oxide Semiconductor (CMOS) Devices and Beyond,  European Workshop on Heterostructure Technology - HETECH 2014, Giessen, Germany, 12.-15.10.2014
• A. R. Chaudhuri, A. Fissel, H.-J. Osten (2014): Template assisted growth and dielectric properties of Gd2O3 thin films on Si(100),  E-MRS 2014 Spring Meeting, Lille, France, 26.-30.05.2014
• F. Kiefer, R. Peibst, T. Ohrdes, J. Krügener, H.-J. Osten, R. Brendel (2014): Emitter Recombination Current Densities of Boron Emitters with Silver/Aluminum Pastes,  40th IEEE Photovoltaic Specialists Conference (PVSC-40), Denver, Colorado, 08.-13.06.2014
  DOI: 10.1109/PVSC.2014.6925514
• H.-J. Osten (invited), D. Schwendt, A. R. Chaudhuri, A. Fissel, P. Shekhter, M. Eizenberg (2014): Tuning Dielectric Properties of Epitaxial Lanthanide Oxides on Silicon,  225th Electrochemical Society Meeting, Orlando, Florida, USA, 11.-15.05.2014
• J. Krügener, E. Bugiel, R. Peibst, F. Kiefer, T. Ohrdes, R. Brendel, H.-J. Osten (2014): Structural Investigation of Ion Implantation of Boron on Random Pyramid Textured Si(100) for Photovoltaic Applications,  20th International Conference on Ion Implantation Technology (IIT), Portland, Oregon, USA, 26.06.-04.07.2014
  DOI: 10.1109/IIT.2014.6940060
• J. Krügener, R. Peibst, E. Bugiel, F. Kiefer, R. Brendel, H.J. Osten (2014): Ion implantation of elemental boron and boric molecules for silicon solar cells,  LNQE Nanoday 2014, Hannover, Germany, 01.10.2014
• K. Ghosh, S. Das, A. Fissel, H.-J. Osten, A. Laha (2014): Long term reliability study of epitaxial neodymium-gadolinium oxides (NGO) on Si substrates for future group IV based CMOS devices,  E-MRS 2014 Spring Meeting, Lille, France, 26.-30.05.2014
• K. Katiyar, A. Grimm, A. Rakesh, R. Bar, T. Wietler, H.-J. Osten, S. K. Ray (2014): Optical Emission Characteristics of Compressively Strained Ge Films,  Photonics 2014: 12th International Conference on Fiber Optics and Photonics, Kharagpur, India, 13.-16.12.2014
• K. Takhar, M. Biswas, D. Tetzlaff, T. Wietler, H.-J. Osten, A. Laha (2014): Monolithic integration of high performance germanium (Ge) based infrared photodetector on silicon and Ge on insulator (GeOI) substrates,  E-MRS 2014 Spring Meeting, Lille, France, 26.-30.05.2014
• P. Shekhter, A. R. Chaudhuri, A. Laha, S. Yehezkel, A. Shriki, H.-J. Osten, M. Eizenberg (2014): The influence of carbon doping on the electric behavior of Gd2O3 as high-k gate dielectric,  AVS 61th International Symposium and Exhibition, Baltimore, Maryland, USA, 09.-14.11.2014
• A. Fissel, J. Krügener, H.-J. Osten (2013): Impact of surface phase transformation on the epitaxial growth of Si on Si(111),  17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Warzaw, Poland, 11.-16.08.2013
• A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Enhanced Dielectric Properties of Nitrogen Doped Epitaxial Gd2O3 Thin Films on Si,  E-MRS 2013 Fall Meeting, Warzaw, Poland, 16.-20.09.2013
• A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Improving Dielectric Properties of Epitaxial Gd2O3 Thin Films on Si by Dopant Incorporation,  30th North American Conference on Molecular Beam Epitaxy (NAMBE 2013), Banff, Alberta, Canada, 05.-11.10.2013
• A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Enhanced Dielectric Properties of Nitrogen Doped Epitaxial Gd2O3 Thin Films on Si,  NanoDay 2013, Hannover, Germany, 10.10.2013
• D. Schwendt, P. Shekhter, M. Eizenberg, H.-J. Osten (2013): Tuning the properties of rare-earth oxides for advanced nano-electronic applications,  First Conference of Scientific Cooperation between Lower Saxony and Israel, Hannover, Germany, 06.-07.10.2013
• D. Tetzlaff, T. F. Wietler, E. Bugiel, H.-J. Osten (2013): Carbon-mediated Epitaxy of Ge on Si,  NanoDay 2013, Hannover, Germany, 10.10.2013
• D. Tetzlaff, T. F. Wietler, E. Bugiel, H.-J. Osten (2013): Influence of growth temperature on strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy,  8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, 02.-06.06.2013
• F. Kiefer, R. Peibst, T. Ohrdes, T. Dullweber, J. Krügener, H.-J. Osten, C. Schöllhorn, A. Grohe, R. Brendel (2013): Analyzing the recombination current densities in industrial like n-type PERT solar cells exceeding 20% efficiency,  Photovoltaic Science and Engineering Conference (PVSEC-23), Taipeh, Taiwan, 28.10.-01.11.2013
• H.-J. Osten (2013): Forschungsaktivitäten am MBE Institut,  Vakuumtag, Hannover, Germany, 09.10.2013
• H.-J. Osten (2013): Elektronik: gestern - heute - morgen,  VDI AK Mikroelektronik, Mikro- und Feinwerktechnik, Hannover, Germany, 09.10.2013
• H.-J. Osten (invited) (2013): Improving Dielectric Properties of Epitaxial Lanthanide Oxides on Silicon,  AVS 60th International Symposium and Exhibition, Long Beach, California, USA, 27.10.-01.11.2013
• J. Krügener, F. A. Wolf, R. Peibst, F. Kiefer, C. Schöllhorn, A. Grohe, R. Brendel, H.-J. Osten (2013): Correlation of dislocation line densities and emitter saturation current densities of ion implanted boron emitters,  Photovoltaic Science and Engineering Conference (PVSEC-23), Taipeh, Taiwan, 28.10.-01.11.2013
• R. Bar, S. Manna, A. Laha, H.-J. Osten, S. K. Ray (2013): Si1-xGex Nanocrystals Embedded in Epitaxial Gd2O3 on p-Si (111) Grown by Molecular Beam Epitaxy for Nanocrystal Based Flash Memory Devices,  International Union of Materials Research Societies – International Conference in Asia – 2013 (IUMRS-ICA-2013), Bangalore, India, 16.-20.12.2013
• A. Fissel, J. Krügener, H.-J. Osten (2012): Preparation of large step-free mesas on Si(111) by molecular beam epitaxy,  E-MRS 2012 Spring Meeting, Symposium A: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications, Strasbourg, France, 14.-18.05.2012
• A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2012): Encapsulated solid phase epitaxy of Ge quantum well embedded into epitaxial rare earth oxide,  17th International Conference on Molecular Beam Epitaxy, Nara, Japan, 23.-28.09.2012
• D. Schwendt, H.-J. Osten (2012): Influence of strain on dielectric properties of rare earth oxides,  17th Workshop on Dielectrics in Microelectronics (WoDiM 2012), Dresden, Germany, 25.-27.06.2012
• D. Tetzlaff , T. F. Wietler, E. Bugiel, H.-J. Osten (2012): Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy,  17th International Conference on Molecular Beam Epitaxy, Nara, Japan, 23.-28.09.2012
• H.-J. Osten (2012): Epitaxial Oxides on Silicon for CMOS and Beyond,  Indian Institute of Technology Hyderabad, Hyderabad, India, 13.12.2012
• H.-J. Osten (invited) (2012): Strain-driven enhancement of dielectric properties in thin metal oxides layers epitaxially grown on silicon,  International Conference on Emerging Electronics (ICEE), Mumbai, India, 15.-17.12.2012
• H.-J. Osten (invited), D. Schwendt (2012): Strain Effects on Dielectric Properties of Thin, Crystalline Rare Earth Oxides on Silicon,  222th Electrochemical Society Meeting, Honolulu, Hawaii, USA, 07.-12.10.2012
• H.-J. Osten, T. Wietler (2012): Materialien und Bauelemente für zukünftige Si-basierte Elektronik,  LNQE-Kolloquium, Hannover, Germany, 05.12.2012
• A. Grimm, D. Schwendt, H.-J. Osten (2011): Structural investigation of epitaxial high-k gate dielectrics,  Deutscher MBE-Workshop 2011, Berlin, Germany, 05.-06.10.2011
• A. Laha, A. Bin, P. R. P. Babu, A. Fissel, H.-J. Osten (2011): Enhanced electrical properties of carbon doped epitaxial Gd2O3 thin films on silicon substrates,  220th Electrochemical Society Meeting, Boston (MA), USA, 09.-14.10.2011
• D. Schwendt, H.-J. Osten (2011): Photoelectron spectroscpoy of ultrathin epitaxial rare earth oxides on silicon,  Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Dresden, Germany, 13.-18.03.2011
• D. Tetzlaff , T. Wietler, E. Bugiel, H.-J. Osten (2011): Carbon-Mediated Growth of Epitaxial Germanium Layers on Silicon,  7th International Conference on Si Epitaxy and Heterostructures (ICSI 7), Leuven, Belgium, 28.08.-01.09.2011
• D. Tetzlaff, T. Wietler, E. Bugiel, H.-J. Osten (2011): Ge-Epitaxie für NIR-Fotodetektoren,  NanoDay 2011, Hannover, Germany, 29.09.2011
• D. Tetzlaff, T. Wietler, E. Bugiel, H.-J. Osten (2011): Kohlenstoffunterstütztes Wachstum von epitaktischen Germaniumschichten auf Silizium,  Deutscher MBE-Workshop 2011, Berlin, Germany, 05.-06.10.2011
• H.-J. Osten (invited) (2011): Epitaxial Oxides on Silicon for CMOS and Beyond,  38th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI), San Diego, California, USA, 16.-20.01.2011
• H.-J. Osten (invited) (2011): Epitaxial Lanthanide Oxides on Silicon for CMOS and Beyond,  7th International Conference on Si Epitaxy and Heterostructures (ICSI 7), Leuven, Belgium, 28.08.-01.09.2011
• J. Krügener, A. Fissel, H.-J. Osten (2011): Formation of large step-free areas on silicon,  Deutscher MBE-Workshop 2011, Berlin, Germany, 05.-06.10.2011
• J. Ruhkopf, T. F. Wietler, E. P. Rugeramigabo, D. Tetzlaff, J. Krügener, E. Bugiel, H.-J. Osten (2011): Surfactant-mediated epitaxy of germanium layers on vicinal silicon substrates,  Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Dresden, Germany, 13.-18.03.2011
• T. F. Wietler, J. Ruhkopf, E. P. Rugeramigabo, D. Tetzlaff, J. Krügener, E. Bugiel, H.-J. Osten (2011): Surfactant-Mediated Epitaxy of Germanium on Vicinal Silicon Substrates,  7th International Conference on Si Epitaxy and Heterostructures (ICSI 7), Leuven, Belgium, 28.08.-01.09.2011
• T. F. Wietler, J. Ruhkopf, E. P. Rugeramigabo, D. Tetzlaff, J. Krügener, E. Bugiel, H.-J. Osten (2011): Surfactant-modifizierte Epitaxie von Germanium auf fehlgeneigten Siliziumsubstraten,  Deutscher MBE-Workshop 2011, Berlin, Germany, 05.-06.10.2011
• A. Fissel, J. Kruegener, H.-J. Osten (2010): Towards controlled molecular beam epitaxial growth of artificially layered Si structures,  16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010
• A. Laha, A. Fissel, H.-J. Osten (2010): Impact of interfacial germanium on the properties of molecular beam epitaxial grown Gd2O3 on Si,  16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010
• A. Laha, A. Fissel, H.-J. Osten (2010): Growth of graphite-like carbon on Si(111) substrates using solid source molecular beam epitaxy technique,  16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010
• A. Laha, E. Bugiel, H.-J. Osten, A. Fissel, V. V . Afanas’ev, M. Badylevich (2010): Semiconductor Nanostructures in Crystalline Rare Earth Oxide for Nanoelectronic Device Applications,  22nd International Conference on Microelectronics (ICM2010), 2010, Cairo, Egypt, 19.-22.12.2010
  DOI: 10.1109/ICM.2010.5696129
• A. Laha, E. Bugiel, H.-J. Osten, A. Fissel, V. V. Afanas'ev, M. Badylevich (2010): Incorporating Si, Ge and Si1-xGex Nanostructures into Crystalline Rare Earth Oxide for Nanoelectronic Device Applications,  E-MRS Fall Meeting 2010, Symp. E: Nanoscaled Si, Ge based materials, Warsaw, Poland, 13.-17.09.2010
• D. Schwendt, E. Bugiel, H.-J. Osten (2010): Tuning the Properties of Crystalline Lanthanide Oxides on Silicon,  International Symposium on Integrated Functionalities (ISIF) 2010, San Juan, Puerto Rico, 13.-16.06.2010
• H.-J. Osten (invited) (2010): Challenges on Large Scale Use of QNM Technologies,  Panel discussion at the 4th International Conference on Quantum, Nano and Micro Technologies (ICQNM 2010), Sint Maarten, Netherlands Antilles, 10.-16.02.2010
• H.-J. Osten (invited) (2010): Introducing Crystalline Rare-Earth Oxides into Si-based Electronics,  International Symposium on Integrated Functionalities (ISIF) 2010, San Juan, Puerto Rico, 13.-16.06.2010
• H.-J. Osten, A. Laha, A. Fissel (2010): Si Nanostructures Embedded into Crystalline Rare-Earth Oxide Matrix for Opto and Nano Electronic Applications,  4th International Conference on Quantum, Nano and Micro Technologies (ICQNM 2010), Sint Maarten, Netherlands Antilles, 10.-16.02.2010
• J. Krügener, H.-J. Osten, A. Fissel (2010): Influence of Surface Preparation Conditions on the Surface Defect Structure of Boron-covered Si(111): An Ultraviolet Photoelectron Spectroscopy Study,  37th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI), Santa Fe, New Mexico, USA, 10.-14.01.2010
• R. Endres, H. Gottlob, M. Schmidt, D. Schwendt, H.-J. Osten, U. Schwalke (2010): Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations,  218th ECS Meeting, Las Vegas, Nevada, USA, 10.-15.10.2010
• R. Ranjith, A. Laha, E. Bugiel, H.-J. Osten (2010): Growth and studies of ultra thin Gd2O3 layers and Gd2O3/Si/Gd2O3 stacking on p-Si(111) wafers by molecular beam epitaxy for resonant tunnel diode applications,  16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010
• A. Fissel, A. Laha, E. Bugiel, R. Dargis, A. Ali, H. J. Osten (2009): Tailoring of Si nanostructures embedded into epitaxial oxides for various applications,  17th International Conference on Composites/Nano Engineering (ICCE-17), Honolulu, USA, 26.07.-01.08.2009
• A. Fissel, A. Laha, E. Bugiel, R. Dargis, A. Ali, H.-J. Osten (2009): Preparation and Properties of Si nanostructures embedded into epitaxial oxides,  Nanotech Europe 2009, Berlin, Germany, 28.-30.09.2009
• A. Fissel, J. Krügener, D. Schwendt, H.-J. Osten (2009): Role of boron and surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study,  12th International Conference on the Formation of Semiconductor Interfaces (ICFSI-12), Weimar, Germany, 05.-10.07.2009
• A. Fissel, R. Dargis, E. Bugiel, J. Krügener, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2009): Single-crystalline silicon on single-crystalline insulator prepared by different approaches,  E-MRS 2009, Symposium I, Strasbourg, France, 08.-12.06.2009
• A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2009): Epitaxial Gd2O3 on strained Si1-xGex layers: Growth and electrical characterization,  E-MRS 2009, Symposium I, Strasbourg, France, 08.-12.06.2009
• A. Laha, M. Jestremski, E. Bugiel, D. Wong, A. Fissel, H.-J. Osten, Ashkar Ali, S. Datta (2009): Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano-electronic Device Application,  2009 International Conference on Mechanical and Electronics Engineering (ICMEE), Chennai, India, 27.-29.06.2009
• A. Laha, M. Jestremski, E. Bugiel, D. Wong, and H.-J. Osten, A. Fissel, A. Ali, S. Datta (2009): Quantum Effects in Group IV Nanostructures Embedded into Crystalline Rare Earth Oxides on Silicon Substrates,  International Conference on Materials for Advanced Technologies (ICMAT2009), Singapore, 28.06.-03.07.2009
• A. N. Nazarov, V. S. Lysenko, Y. V.Gomeniuk, Y. Y.Gomeniuk, H.-J. Osten, A. Laha (2009): Interface and bulk properties of MBE-grown rare-earth metal oxides on silicon,  216th ECS Meeting, Wien, Austria, 04.-09.10.2009
• D. Schwendt, D. Tetzlaff, E. Bugiel, H.-J. Osten (2009): Stability of Crystalline Gd2O3 Thin Films on Silicon during Post-growth Processing,  3rd International Conference on Signals, Circuits and Systems (SCS’09), Djerba, Tunesia, 06.-08.11.2009
• H.-J. Osten (invited) (2009): Epitaxy of High-K Oxides,  15th Euro-MBE, Zakopane, Poland, 08.-11.03.2009
• H.-J. Osten (invited) (2009): Introducing Crystalline Rare-Earth Oxides into Si-based Electronics,  XVth International Workshop on the Physics of Semiconductor Devices (XVth IWPSD), Delhi, India, 15.-19.12.2009
• H.-J. Osten, A. Laha, A. Fissel (invited) (2009): Epitaxial Lanthanide Oxide based Gate Dielectrics,  MRS Spring Meeting, San Francisco, California, USA, 13.-17.04.2009
• J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, T. Liu, H.-J. Osten (2009): Structural Study of Epitaxially Grown Nano-thick Nd2O3/Si(111) Heterostructure,  4th IEEE Int. Conf. on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS), Shenzhen, China, 05.-08.01.2009
• R. Dargis, A. Fissel, D. Schwedt, E. Bugiel, J. Krügener, T. Wietler, A. Laha, H.-J. Osten (2009): Epitaxial Growth of Silicon on Rare-Earth Metal oxide,  4th Symposium on Vacuum based Science and Technology, Koszalin-Kolobrzeg, Poland, 21.-23.09.2009
• A. Fissel, J. Krügener, E. Bugiel, T. Block, H.-J. Osten (2008): Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes,  Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) 2008, Sydney, Australia, 28.07.-01.08.2008
• A. Laha, A. Fissel, E. Bugiel, M. Badylevich, V. Afanas'ev, H.-J. Osten (2008): Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application,  Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) 2008, Sydney, Australia, 28.07.-01.08.2008
• A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2008): Si-nanoclusters embedded into epitaxial rare earth oxides: potential candidate for non-volatile memory applications,  E-MRS Meeting 2008, Strasbourg, France, 27.-31.05.2008
• A. Laha, E. Bugiel, R. Dargis, D. Schwendt, M. Badylevich, V. Afanasiev, A. Fissel, H.-J. Osten (2008): Integration of low dimensional crystalline Si into functional epitaxial oxides,  Workshop on Recent Advances of Low Dimensional Structures and Devices (WRA-LDSD) Nottingham, UK, 07.-09.04.2008
• H.-J. Osten, A. Laha, E. Bugiel, A. Fissel (2008): Si Nanostructures Embedded into Epitaxial Gd2O3 on Si,  15th International Conference on Molecular Beam Epitaxy, Vancouver, Canada, 03.-08.08.2008
• M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans A. Laha, H.-J. Osten, A. Fissel (2008): Electronic structure of interfaces of cubic Gd2O3 with Si(111) and Si nano-clusters,  E-MRS Meeting 2008, Strasbourg, France, 27.-31.05.2008
• M. C. Lemme, H. D. B. Gottlob, T. J. Echtermeyer, H. Kurz, R. Endres, U. Schwalke, M. Czernohorsky, H.-J. Osten (2008): CMOS Integration of Epitaxial Gd2O3,  5th Workshop on Dielectrics in Microelectronics (WoDiM), Bad Saarow, Germany, 23.-25.06.2008
• Q.-Q. Sun, A. Laha, H.-J. Osten, S.-J. Ding, D. W. Zhang, A. Fissel (2008): Electrical Characterization of Ultrathin Single Crystalline Gd2O3/Si(100) with Pt Top Electrode,  9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Beijing, China, 20.-23.10.2008
• R. Dargis, A. Fissel, E. Bugiel, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2008): Development of multi-step procedure for epitaxial growth of crystalline silicon on rare-earth-metal oxide for SOI-applications,  14th International Conference on Solid Films and Surfaces (ICSFS), Dublin, 29.06.-04.07.2008
• T. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, H.-J. Osten (2008): Epitaxial growth of Gd2O3 on Ge films grown by surfactant-mediated epitaxy on Si(001) substrates,  4th International SiGe Technology and Device Meeting (ISTDM 2008), Taiwan, 11.-14.05.2008
• A. Fissel, D. Kühne, E. Bugiel, A. Laha, M. Czernohorsky, R. Dargis, H.-J. Osten (2007): Silicon in functional epitaxial oxides: A new group of nanostructures,  The 6th International Conference on Low Dimensional Structures and Devices (LDSD), San Andres, Colombia, 15.-20.04.2007
• A. Laha, A. Fissel, H.-J. Osten (2007): Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: A route towards tuning the electrical properties,  15th Conference on Insulating Films on Semiconductors (INFOS), Athens, Greece, 20.-23.06.2007
• A. Laha, D. Kühne, E. Bugiel, A. Fissel, H.-J. Osten (2007): Confining single crystal Si-nanoclsuters into epitaxial rare earth oxides: Taking advantage of quantum phenomena to pratical applications,  IUMRS-ICAM, Bangalore, India, 08.-13.10.2007
• A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H.-J. Osten (2007): Charge trapping in ultrathin Gd2O3 high-k dielectric,  15th Conference on Insulating Films on Semiconductors (INFOS), Athens, Greece, 20.-23.06.2007
• B. Raissi, J. Piscator, O. Engström, S. Hall, O. Buiu, M. C. Lemme, H. D. B. Gottlob, P. K. Hurley, K. Cherkaoui, and H.-J. Osten (2007): High-K-oxide/silicon interfaces characterized by capacitance frequency spectroscopy,  37th European Solid-State Device Research Conference, München, Germany, 11.-13.09.2007
• E. Bugiel, A. Fissel, H.J. Osten (2007): Integration of Functional Epitaxial Oxides into Silicon: A TEM Investigation,  Microscopy of Semiconducting Materials XV, Churchill College, Cambridge, UK, 02.-05. April 2007.
• E. Bugiel, A. Fissel, M. Czernohorsky, A. Laha, H.-J. Osten (invited) (2007): Integration of Functional Epitaxial Oxides into Silicon: A TEM Investigation,  Microscopy Conference, Saarbrücken, 02.-07.09.2007
• E. Lipp, M. Eizenberg, M. Czernohorsky, H.-J. Osten (2007): Thermal stability of Pt/Epitaxial Gd2O3/Si Stacks,  MRS Spring Meeting 2007, San Francisco, California, USA, 09.-13.04.2007
• H.-J. Osten (invited) (2007): From high-K application to nanostructures: Integration of epitaxial gadolinium oxide into silicon,  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France 20.-24.05.2007
• H.-J. Osten (invited) (2007): Crystalline Rare-Earth Oxides as High-k Materials for Future CMOS Technologies,  212th ECS Meeting, Washington, D.C., USA, 07.-12.10.2007
• H.-J. Osten, D. Kühne, A. Laha, R. Dargis, M. Czernohorsky, E. Bugiel, A. Fissel (invited) (2007): Integration of Functional Epitaxial Oxides into Silicon: From High-K Application to Nanostructures,  Jahrestagung der Deutsche Physikalischen Gesellschaft, Regensburg, Germany, 25.-30.03.2007
• H.-J. Osten, M. Czernohorsky, R. Dargis, A. Laha, D. Kühne, E. Bugiel, A. Fissel (invited) (2007): Integration of functional epitaxial oxides into silicon: From high-k application to nanostructures,  15th Conference on Insulating Films on Semiconductors (INFOS), Athens, Greece, 20.-23.06.2007
• A. Fissel, C. R. Wang, E. Bugiel, and H.-J. Osten (2006): Preparation of twinning superlattices in silicon by atomic-scale surface manipulation: First step towards Si polytype growth,  24th North American Conference on Molecular Beam Epitaxy, Durham, North Carolina, USA, 08.-11.10.2006
• A. Fissel, E. Bugiel, and H.-J. Osten (2006): Formation of Si twinning-superlattice: First Step towards Si polytype growth,  E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
• A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Properties of crystalline rare-earth oxide high-k dielectrics grown by molecular beam epitaxy on silicon carbide,  E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
• A. Fissel, M. Czernohorsky, R. Dargis, H.-J. Osten (2006): Growth and Properties of Crystalline Gadolinium Oxide Dielectric Layers On Silicon Carbide for High-K Application,  6th European Conference on Silicon Carbide and Related Materials (ECSCRM), Newcastle upon Tyne, UK, 03.-07.09.2006
• A. Laha, A. Fissel, E. Bugiel, H.-J. Osten (2006): Comparative Investigation of Epitaxial Gd2O3 Thin Films Grown on Si Substrates with Different Orientations for High-K Application,  48th Electronic Materials Conference, Pennsylvania State University, Pennsylvania, USA, 28.-30.06.2006
• A. Laha, A. Fissel, E. Bugiel, O. Kirfel, H.-J. Osten (2006): Epitaxial multi-component rare earth oxide for high-K application,  E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
• D. Kühne, A. Fissel, E. Bugiel, H.-J. Osten (2006): Novel approach for fabrication of single crystalline insulator/Si/insulator double barrier nanostructures using cooperative vapour-solid-phase epitaxy,  MRS Spring Meeting 2006, San Francisco, California, USA, 18.-21.04.2006
• D. Kühne, A. Fissel, E. Bugiel, H.-J. Osten (2006): Fabrication of single crystalline insulator/Si/insulator double barrier nanostructure using cooperative vapor-solid-phase epitaxy,  E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
• D. Kühne, E. Bugiel, A. Fissel, H.-J. Osten (2006): Novel Approach for Fabrication of Single Crystalline Insulator/Si/Insulator Nanostructures: Cooperative Vapour-Solid phase Epitaxy,  33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI), Cocoa Beach, Florida, USA, 15.-19.01.2006
• E. Bugiel, M. Lewerenz, H.-J. Osten (2006): Fabrication of well-defined individual dislocations in SiGe as a novel 1-dimensional system,  E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
• H.-J. Osten (invited) (2006): MBE growth and Properties of Crystalline Oxide/Silicon/Oxide Nanostructures,  ESF Exploratory Workshop, Como, Italy, 12.-13.09.2006
• H.-J. Osten, A. Laha, A. Fissel (2006): Influence of Si substrate orientation on growth and electrical properties of epitaxial Gd2O3 thin films for high-κ application,  37th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, 06.-09.12.2006
• H.-J. Osten, D. Kühne, A. Laha, M. Czernohorsky, E. Bugiel, A. Fissel (2006): Integration of functional epitaxial oxides into silicon: From high-k application to nanostructures,  24th North American Conference on Molecular Beam Epitaxy, Durham, North Carolina, USA, 08.-11.10.2006
• H.-J. Osten, M. Czernohorsky, E. Bugiel, D. Kühne, A. Fissel (2006): Interface engineering during epitaxial growth of high-k lanthanide oxides on silicon,  MRS Spring Meeting 2006, San Francisco, California, USA, 18.-21.04.2006
• H.D.B. Gottlob, T. Echtermeyer, T. Mollenhauer, M. Schmidt, J.K. Evaki, T. Wahlbrink, M.C. Lemme, H. Kurz, R. Endres, Y. Stefanov, U. SChwalke, M. Czernohorsky, E. Bugiel, A. Fissel, H.J. Osten (2006): Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics,  36th European Solid-State Device Research Conference, Montreux, Switzerland, 18.-22. September 2006.
• M. Czernohorsky, A. Fissel, H.-J. Osten (2006): Characterization of crystalline rare-earth oxide high-k dielectrics grown by molecular beam epitaxy on silicon carbide,  33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI), Cocoa Beach, Florida, USA, 15.-19.01.2006
• M. Czernohorsky, A. Fissel, R. Dargis, E. Bugiel, H.-J. Osten (2006): Wachstum von kristallinem Gadoliniumoxid auf Silicium,  Deutscher MBE Workshop, Hamburg, Germany, 26.-27.09.2006
• R. Dargis, A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Epitaxie von Gadoliniumoxid auf Siliziumcarbid,  Deutscher MBE Workshop, Hamburg, Germany, 26.-27.09.2006
• A. Fissel, O. Kirfel, Z. Elassar, E. Bugiel, M. Czernohorsky, H. J. Osten (2005): Interface formation during epitaxial growth of Neodymium Oxide on Si(001),  207th Electrochemical Society Meeting, Quebec (Canada), 15.-20.05.2005
• E. Bugiel, H.J. Osten, A. Fissel, O. Kirfel, M. Czernohorsky (2005): TEM investigations of Epitaxial High-k Dielectrics on Silicon,  Microscopy of Semiconductor Materials (MSM) XIV Conference, Oxford (UK), 11.-14.04.2005
• H.-J. Osten (2005): Interface formation during epitaxial growth of binary metal oxide on silicon,  NATO workshop Defects in High-K Materials, St. Petersburg, Russia, 11.-14.07.2005
• H.-J. Osten (invited) (2005): Auf dem Weg zur Nanoelektronik,  EKompass Workshop, Hannover, Germany, 25.04.2005
• H.-J. Osten (invited) (2005): MBE of rare earth oxides,  European Science Foundation, Exploratory Workshop, San Remo, Italy, 11.-13.05.2005
• H.D.B. Gottlob, T. Echtermeyer, T. Mollenhauer, J. Efavi, M. Schmidt, T. Wahlbrik, M.C. Lemme, H. Kurz, M. Czernohorsky, E. Bugiel, H.J. Osten, O. Kirfel, A. Fissel (2005): Crystalline Gd2O3 High-k Gate Dielectrics with TiN Capped Fully Silicided (FUSI) NiSi Electrodes,  36th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington (USA), 01.-03.12.2005
• M. Czernohorsky, O. Kirfel, Z. Elassar, E. Bugiel, A. Fissel, H.-J. Osten (2005): MBE Growth and Interface Formation of Neodymium Oxide on Silicon,  13th Euro-Konferenz Molecular Beam Epitaxy, Grindelwald, Switzerland, 07.-09.03.2005
• A. Fissel, C. Wang, E. Bugiel, H.-J. Osten (2004): Epitaxial growth of non-cubic silicon,  The 5th International Conference on Low Dimensional Structures and Devices (LDSD), Cancun, Mexico, 12.-17.12.2004
• H.-J. Osten (invited) (2004): The red brick wall of traditional semiconductor electronics,  Hereaus-Seminar "Spintronic", Bad Honnef, 11.-14.01.2004
• H.-J. Osten (invited) (2004): Epitaxial High-k Dielectrics on Silicon,  5th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice, Slovakia, 17.-21.10.2004
• H.-J. Osten, E. Bugiel, A. Fissel, O. Kirfel (invited) (2004): Epitaxial Silicon/Metal Oxide Stacks for various applications,  11th Advanced Heterostructure Workshop, Hawaii, USA, 05.-10.12.2004
• H.-J. Osten, E. Bugiel, O. Kirfel, M. Czernohorsky, A. Fissel (invited keynote lecture) (2004): Growth and Properties of Epitaxial Metal Oxides for High-K Dielectrics,  IC MBE 2004, Edinburgh, UK, August 2004
• A. Fissel, H.-J. Osten, and E. Bugiel (invited) (2003): Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to Praseodymium Oxide,  Physics and Chemistry of Semiconductor Interfaces, Salt Lake City, Utah, USA, 19.-23.01.2003
• H.-J. Osten (invited) (2003): Growth, properties, and application of ternary SiGeC alloys on Si,  Keynote lecture at the III. Ibero American Workshop on Nanostructures for Application in Micro and Optoelectronic, Madrid, Spain, 24.-28.03.2003
• H.-J. Osten (invited) (2003): Epitaxial high-K materials as future gate dielectrics,  HeTech03, San Rafael, Segovia, 12.-15.10.2003
• H.-J. Osten, A. Bugiel, A. Fissel (invited) (2003): Understanding epitaxial growth of alternative high-K dielectrics on Si(001),  ESF Workshop, Zürich, Switzerland, 17.-18.03.2003
• H.-J. Osten, A. Fissel (invited) (2003): Epitaxial High-K Materials,  12th EURO-MBE 2002, Bad Hofgastein, Austria, 16.-19.02.2003
• H.-J. Osten (invited) (2002): SiGe:C Device Application,  201st ECS Meeting, 9th International Symposium on Silicon Material Science and Technology, Philadelphia, 12.-17.05.2002
• H.-J. Osten, E. Bugiel, A. Fissel (2002): Epitaxial Praseodymium Oxide: A New High-K Dielectric,  9th International Workshop on Oxide Electronics (WOE), St. Peter Beach, Florida, Oct. 2002
• H.-J. Osten, E. Bugiel, A. Fissel (invited) (2002): Epitaxial Praseodymium Oxide: A New High-K Dielectric,  Material Research Society, Fall Meeting, Symp. M, Boston, 02.-05.12.2002
• U. Schwalke, K. Boye, K. Haberle, R. Heller, G. Hess, G. Müller, T. Ruland. G. Tzschöckel, H. J. Osten, A. Fissel, H.-J. Müssig (invited) (2002): High-k dielectric materials: Integration issues and electrical characteristics,  European Congress on Advanced Materials and Processes, Materials Week 2002, München, Germany, 30.09.–02.10.2002
• U. Schwalke, K. Boye, K. Haberle, R. Heller, G. Hess, G. Müller, T. Ruland. G. Tzschöckel, H.-J. Osten, A. Fissel, H. J. Müssig (invited) (2002): Process Integration of Crystalline Pr2O3 High-K Gate Dielectrics,  32th European Solid-State Device Research Conference (ESSDERC 2002), Firenze, Italy, 24.-26.09.2002