Publikationen

Journal

• H. Genath, M. A. Schubert, H. L. Yamtomo, J. Krügener, H. J. Osten (2024): Epitaxial Growth of Nd2O3 layers on Virtual SiGe Substrates on Si(111),  Journal of Applied Physics 135 (2024) 115302
  DOI: 10.1063/5.0191350
• H. Genath, J. Norberg, B. Wolpensinger, H.-J. Osten (2022): Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates,  Thin Solid Films (2022) 139561
  DOI: 10.1016/j.tsf.2022.139561
• H. Genath, J. Schmidt, H. J. Osten (2020): Analysis of thin germanium-rich SiGe layers on Si(111) substrates grown by carbon-mediated epitaxy,  Journal of Crystal Growth 535 (2020) 125569
  DOI: 10.1016/j.jcrysgro.2020.125569